Transient enhanced diffusion of arsenic in silicon S Solmi, M Ferri, M Bersani, D Giubertoni, V Soncini
Journal of applied physics 94 (8), 4950-4955, 2003
96 2003 Depth profile characterization of ultra shallow junction implants P Hönicke, B Beckhoff, M Kolbe, D Giubertoni, J van den Berg, G Pepponi
Analytical and bioanalytical chemistry 396, 2825-2832, 2010
70 2010 P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation M Posselt, B Schmidt, W Anwand, R Grötzschel, V Heera, A Mücklich, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
68 2008 Investigation on indium diffusion in silicon S Solmi, A Parisini, M Bersani, D Giubertoni, V Soncini, G Carnevale, ...
Journal of Applied Physics 92 (3), 1361-1366, 2002
58 2002 Arsenic uphill diffusion during shallow junction formation M Ferri, S Solmi, A Parisini, M Bersani, D Giubertoni, M Barozzi
Journal of Applied Physics 99 (11), 2006
57 2006 Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ...
Applied physics letters 89 (19), 2006
50 2006 Combined evaluation of grazing incidence X-ray fluorescence and X-ray reflectivity data for improved profiling of ultra-shallow depth distributions D Ingerle, F Meirer, G Pepponi, E Demenev, D Giubertoni, ...
Spectrochimica Acta Part B: Atomic Spectroscopy 99, 121-128, 2014
41 2014 Vacancy-engineering implants for high boron activation in silicon on insulator AJ Smith, NEB Cowern, R Gwilliam, BJ Sealy, B Colombeau, EJH Collart, ...
Applied physics letters 88 (8), 2006
37 2006 Hydrogen diffusion in R Trotta, D Giubertoni, A Polimeni, M Bersani, M Capizzi, F Martelli, ...
Physical Review B 80 (19), 195206, 2009
35 2009 Interphase exchange coupling in Fe∕ Sm–Co bilayers with gradient Fe thickness M Yu, J Hattrick-Simpers, I Takeuchi, J Li, ZL Wang, JP Liu, SE Lofland, ...
Journal of applied physics 98 (6), 2005
33 2005 Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI JJ Hamilton, EJH Collart, B Colombeau, C Jeynes, M Bersani, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005
33 2005 Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass … G Pepponi, C Streli, P Wobrauschek, N Zoeger, K Luening, P Pianetta, ...
Spectrochimica Acta Part B: Atomic Spectroscopy 59 (8), 1243-1249, 2004
32 2004 Diffusion and electrical activation of indium in silicon S Scalese, M Italia, A La Magna, G Mannino, V Privitera, M Bersani, ...
Journal of applied physics 93 (12), 9773-9782, 2003
30 2003 Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon D Giubertoni, G Pepponi, S Gennaro, M Bersani, MA Sahiner, SP Kelty, ...
journal of applied physics 104 (10), 2008
29 2008 Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕ SiO2 interface JJ Hamilton, NEB Cowern, JA Sharp, KJ Kirkby, EJH Collart, ...
Applied physics letters 89 (4), 2006
28 2006 Correlation between silicon‐nitride film stress and composition: XPS and SIMS analyses L Vanzetti, M Barozzi, D Giubertoni, C Kompocholis, A Bagolini, P Bellutti
Surface and Interface Analysis: An International Journal devoted to the …, 2006
27 2006 Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS L Lobo, B Fernández, R Pereiro, N Bordel, E Demenev, D Giubertoni, ...
Journal of Analytical Atomic Spectrometry 26 (3), 542-549, 2011
25 2011 Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink JJ Hamilton, KJ Kirkby, NEB Cowern, EJH Collart, M Bersani, ...
Applied Physics Letters 91 (9), 2007
23 2007 Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon G Pepponi, D Giubertoni, M Bersani, F Meirer, D Ingerle, G Steinhauser, ...
Journal of Vacuum Science & Technology B 28 (1), C1C59-C1C64, 2010
22 2010 A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers D Ingerle, F Meirer, N Zoeger, G Pepponi, D Giubertoni, G Steinhauser, ...
Spectrochimica Acta Part B: Atomic Spectroscopy 65 (6), 429-433, 2010
21 2010