| Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization CC Enz, GC Temes Proceedings of the IEEE 84 (11), 1584-1614, 1996 | 2390 | 1996 |
| An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications CC Enz, F Krummenacher, EA Vittoz Analog integrated circuits and signal processing 8, 83-114, 1995 | 1610 | 1995 |
| Minimum-energy broadcast in all-wireless networks: NP-completeness and distribution issues M Čagalj, JP Hubaux, C Enz Proceedings of the 8th annual international conference on Mobile computing …, 2002 | 689 | 2002 |
| Charge-based MOS transistor modeling: the EKV model for low-power and RF IC design CC Enz, EA Vittoz John Wiley & Sons, 2006 | 588 | 2006 |
| WiseNET: an ultralow-power wireless sensor network solution CC Enz, A El-Hoiydi, JD Decotignie, V Peiris Computer 37 (8), 62-70, 2004 | 576 | 2004 |
| MOS transistor modeling for RF IC design C Enz, Y Cheng IEEE Journal of Solid-State Circuits 35 (2), 186-201, 2000 | 411 | 2000 |
| A CMOS chopper amplifier CC Enz, EA Vittoz, F Krummenacher IEEE Journal of Solid-State Circuits 22 (3), 335-342, 1987 | 353 | 1987 |
| WiseMAC, an ultra low power MAC protocol for the wiseNET wireless sensor network A El-Hoiydi, JD Decotignie, C Enz, E Le Roux Proceedings of the 1st international conference on Embedded networked sensor …, 2003 | 293 | 2003 |
| Design of high-Q varactors for low-power wireless applications using a standard CMOS process AS Porret, T Melly, CC Enz, EA Vittoz IEEE Journal of Solid-State Circuits 35 (3), 337-345, 2000 | 270 | 2000 |
| An MOS transistor model for RF IC design valid in all regions of operation C Enz IEEE Transactions on Microwave Theory and Techniques 50 (1), 342-359, 2002 | 250 | 2002 |
| CMOS low-power analog circuit design CC Enz, EA Vittoz Emerging Technologies: Designing Low Power Digital Systems, 79-133, 1996 | 239 | 1996 |
| A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz Solid-State Electronics 49 (3), 485-489, 2005 | 213 | 2005 |
| Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz SHM Jen, CC Enz, DR Pehlke, M Schroter, BJ Sheu IEEE Transactions on Electron Devices 46 (11), 2217-2227, 1999 | 205 | 1999 |
| Theoretical limit of low temperature subthreshold swing in field-effect transistors A Beckers, F Jazaeri, C Enz IEEE Electron Device Letters 41 (2), 276-279, 2019 | 169 | 2019 |
| Cryogenic MOS transistor model A Beckers, F Jazaeri, C Enz IEEE Transactions on Electron Devices 65 (9), 3617-3625, 2018 | 163 | 2018 |
| Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K A Beckers, F Jazaeri, C Enz IEEE Journal of the Electron Devices Society 6, 1007-1018, 2018 | 161 | 2018 |
| Energy parsimonious circuit design through probabilistic pruning A Lingamneni, C Enz, JL Nagel, K Palem, C Piguet 2011 Design, Automation & Test in Europe, 1-6, 2011 | 141 | 2011 |
| An ultralow-power UHF transceiver integrated in a standard digital CMOS process: architecture and receiver AS Porret, T Melly, D Python, CC Enz, EA Vittoz IEEE Journal of Solid-State Circuits 36 (3), 452-466, 2001 | 141 | 2001 |
| BSIM6: Analog and RF compact model for bulk MOSFET YS Chauhan, S Venugopalan, MA Chalkiadaki, MAU Karim, H Agarwal, ... IEEE Transactions on Electron Devices 61 (2), 234-244, 2013 | 140 | 2013 |
| The EPFL-EKV MOSFET model equations for simulation M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Version 2.6, 1998 | 132 | 1998 |
A.M. IonescuProfessor of NanoelectronicsПотвърден имейл адрес: epfl.ch
