Xiaohang Li

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2019
Позовавания	4887	3327
h-индекс	40	33
i10-индекс	98	92

720

360

180

540

20102011201220132014201520162017201820192020202120222023202433 100 104 282 195 245 147 185 244 391 461 505 571 669 710

Публичен достъп

Преглед на всички

40 статии

9 статии*

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

HAIDING SUNProfessor of University of Science and Technology of ChinaПотвърден имейл адрес: ustc.edu.cn
Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]Потвърден имейл адрес: adelaide.edu.au
Che-Hao LiaoNational Yunlin University of Science and TechnologyПотвърден имейл адрес: yuntech.edu.tw
Yi LuUniversity of Wisconsin-Madison; King Abdullah University of Science and TechnologyПотвърден имейл адрес: wisc.edu
Ronghui LinKing Abdullah University of Science and TechnologyПотвърден имейл адрес: kaust.edu.sa
Fernando PonceProfessor of Physics, Arizona State UniversityПотвърден имейл адрес: asu.edu
Jae-Hyun RyouAssociate Professor, Mechanical Engineeering, University of HoustonПотвърден имейл адрес: uh.edu
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUПотвърден имейл адрес: osu.edu
Shyh-Chiang ShenProfessor, Electrical and Computer Engineering, Georgia Institute of TechnologyПотвърден имейл адрес: ece.gatech.edu
P. D. YoderGeorgia Institute of TechnologyПотвърден имейл адрес: gatech.edu
Xiao Tang 汤潇Lecturer, University of BristolПотвърден имейл адрес: kaust.edu.sa
Tsung-Ting KaoПотвърден имейл адрес: intel.com
Tien Khee NgPrincipal Scientist, KAUST; Fellow of IET, Fellow of IOPПотвърден имейл адрес: kaust.edu.sa
Boon S. OoiKing Abdullah University of Science & Technology (KAUST)Потвърден имейл адрес: kaust.edu.sa
Feras AlQatariDevelopment Engineer, ams OSRAMПотвърден имейл адрес: kaust.edu.sa
Hongen XieIntel, Arizona State UniversityПотвърден имейл адрес: asu.edu
Alec M FischerArizona State UniversityПотвърден имейл адрес: asu.edu
Carlos G. Torres CastanedoPostdoctoral Researcher IMDEA NanoscienceПотвърден имейл адрес: u.northwestern.edu
Md. Mahbub SatterSilicon Photonics Solutions Group, Intel CorporationПотвърден имейл адрес: intel.com
Zhiyuan LiuKing Abdullah University of Science and TechnologyПотвърден имейл адрес: kaust.edu.sa

Следене

Xiaohang Li

Associate Professor, Advanced Semiconductor Lab, ECE, CEMSE

Потвърден имейл адрес: kaust.edu.sa - Начална страница

Semiconductors (Ultra)wide bandgap Optoelectronics Electronics 3D stacking


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios X Li, R Song, YK Ee, P Kumnorkaew, JF Gilchrist, N Tansu IEEE Photonics Journal 3 (3), 489-499, 2011	223	2011
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, X Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 061104, 2009	197	2009
HCl flow-induced phase change of α-, β- and ε-Ga2O3 films grown by MOCVD H Sun, KH Li, CGT Castanedo, S Okur, GS Tompa, T Salagaj, S Lopatin, ... Crystal Growth & Design 18, 2370, 2018	196	2018
Light Extraction of organic light emitting diodes by defective hexagonal‐close‐packed array WH Koo, W Youn, P Zhu, X Li, N Tansu, F So Advanced Functional Materials 22 (16), 3454-3459, 2012	188	2012
III-nitride photonics N Tansu, H Zhao, G Liu, X Li, J Zhang, H Tong, YK Ee IEEE Photonics Journal 2 (2), 241-248, 2010	180	2010
Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire YK Ee, X Li, J Biser, W Cao, HM Chan, RP Vinci, N Tansu Journal of Crystal Growth 312 (8), 1311-1315, 2010	126	2010
Recent advances in the growth of gallium oxide thin films employing various growth techniques- A review B Tak, S Kumar, A Kapoor, D Wang, X Li, H Sun, R Singh Journal of Physics D: Applied Physics 54, 453002, 2021	111	2021
First-principle electronic properties of dilute-As GaNAs alloy for visible light emitters CK Tan, J Zhang, X Li, G Liu, BO Tayo, N Tansu Journal of Display Technology 9 (4), 272-279, 2013	111	2013
Valence and conduction band offsets of β-Ga2O3/AlN heterojunction H Sun, CGT Castaned, K Liu, KH Li, W Guo, R Lin, X Liu, J Li, X Li Applied Physics Letter 111 (16), 162105, 2017	106	2017
High-Temperature Photocurrent Mechanism of β-Ga2O3 Based Metal-Semiconductor-Metal Solar-Blind Photodetectors BR Tak, M Garg, S Dewan, CG Torres-Castanedo, KH Li, V Gupta, X Li, ... Journal of Applied Physics 125, 144501, 2019	102	2019
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed Microsphere Arrays X Li, P Zhu, G Liu, J Zhang, R Song, YK Ee, P Kumnorkaew, JF Gilchrist, ... Journal of Display Technology 9 (5), 324-332, 2013	98	2013
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, X Li, MM Satter, SC Shen, PD Yoder, JH Ryou, ... Applied Physics Letter 102, 101110, 2013	98	2013
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates X Li, T Detchprohm, TT Kao, MM Satter, SC Shen, PD Yoder, RD Dupuis, ... Applied Physics Letter 105, 141106, 2014	97	2014
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime HP Zhao, GY Liu, X Li, RA Arif, GS Huang, JD Poplawsky, ST Penn, ... IET optoelectronics 3 (6), 283-295, 2009	96	2009
71-Mbit/s Ultraviolet-B LED Communication Link based on 8-QAM-OFDM Modulation X Sun, Z Zhang, A Chaaban, TK Ng, C Shen, R Chen, J Yan, H Sun, X Li, ... Optics Express 25 (19), 23267, 2017	89	2017
Inverse design of plasmonic metasurfaces by convolutional neural network R Lin, Y Zhai, C Xiong, X Li Optics Letter 45, 1362-1365, 2020	83	2020
Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes H Sun, MK Shakfa, M Mufasila, B Janjua, KH Li, R Lin, I Roqan, B Ooi, ... ACS Photonics 5 (3), 964, 2018	80	2018
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires N Alfaraj, S Mitra, F Wu, I Ajia, B Janjua, A Prabaswara, RA Aljefri, H Sun, ... Applied Physics Letters 110 (16), 161110, 2017	70	2017
Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates B Janjua, H Sun, C Zhao, DH Anjum, D Priante, AA Alhamoud, F Wu, X Li, ... Optics Express 25 (2), 1381-1390, 2017	68	2017
Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design F Wu, H Sun, I Ajia, I Roqan, D Zhang, J Dai, C Chen, ZC Feng, X Li Journal of Physics D: Applied Physics 50 (24), 245101, 2017	65	2017

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