Следене
Yao-Feng Chang
Yao-Feng Chang
Intel
Потвърден имейл адрес: utexas.edu - Начална страница
Заглавие
Позовавания
Позовавания
Година
“Cut‐and‐paste” manufacture of multiparametric epidermal sensor systems
S Yang, YC Chen, L Nicolini, P Pasupathy, J Sacks, B Su, R Yang, ...
Advanced Materials 27 (41), 6423-6430, 2015
2632015
Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
1662017
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10 (1), 1-27, 2015
1402015
Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ...
Nano letters 14 (2), 813-818, 2014
1092014
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 043709, 2014
1032014
Demonstration of synaptic behaviors and resistive switching characterizations by proton exchange reactions in silicon oxide
YF Chang, B Fowler, YC Chen, F Zhou, CH Pan, TC Chang, JC Lee
Scientific reports 6 (1), 1-10, 2016
902016
Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory
YF Chang, PY Chen, B Fowler, YT Chen, F Xue, Y Wang, F Zhou, JC Lee
Journal of Applied Physics 112 (12), 123702, 2012
852012
Complementary metal‐oxide semiconductor and memristive hardware for neuromorphic computing
M Rahimi Azghadi, YC Chen, JK Eshraghian, J Chen, CY Lin, ...
Advanced Intelligent Systems 2 (5), 1900189, 2020
782020
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
742019
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
712018
Electroforming and resistive switching in silicon dioxide resistive memory devices
BW Fowler, YF Chang, F Zhou, Y Wang, PY Chen, F Xue, YT Chen, ...
RSC Advances 5 (27), 21215-21236, 2015
692015
Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 043708, 2014
672014
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ...
Nanoscale 9 (25), 8586-8590, 2017
662017
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee
Applied Physics Letters 109 (22), 223501, 2016
662016
Charge quantity influence on resistance switching characteristic during forming process
TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ...
IEEE electron device letters 34 (4), 502-504, 2013
632013
A study of resistive switching effects on a thin transition layer produced at the oxide/iron interface of -contented electrode structures
LW Feng, CY Chang, YF Chang, WR Chen, SY Wang, PW Chiang, ...
Applied Physics Letters 96 (5), 052111, 2010
622010
Study of polarity effect in SiOx-based resistive switching memory
YF Chang, PY Chen, YT Chen, F Xue, Y Wang, F Zhou, B Fowler, JC Lee
Applied Physics Letters 101 (5), 052111, 2012
602012
Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
Y Wang, YT Chen, F Xue, F Zhou, YF Chang, B Fowler, JC Lee
Applied Physics Letters 100 (8), 083502, 2012
602012
Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory
F Zhou, YF Chang, B Fowler, K Byun, JC Lee
Applied Physics Letters 106 (6), 063508, 2015
522015
Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiN x/p-Si memory devices
S Kim, YF Chang, BG Park
RSC advances 7 (29), 17882-17888, 2017
492017
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