Следене
Seung Heon Shin
Seung Heon Shin
Korea Polytechnics
Потвърден имейл адрес: kopo.ac.kr
Заглавие
Позовавания
Позовавания
Година
Radio Frequency Transistors and Circuits Based on CVD MoS2
A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ...
Nano letters 15 (8), 5039-5045, 2015
1672015
Extremely high-frequency flexible graphene thin-film transistors
S Park, SH Shin, MN Yogeesh, AL Lee, S Rahimi, D Akinwande
IEEE Electron Device Letters 37 (4), 512-515, 2016
542016
Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications
TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013
422013
High-performance III–V devices for future logic applications
DH Kim, TW Kim, RH Baek, PD Kirsch, W Maszara, JA Del Alamo, ...
2014 IEEE International Electron Devices Meeting, 25.2. 1-25.2. 4, 2014
292014
Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
TW Kim, HM Kwon, SH Shin, CS Shin, WK Park, E Chiu, M Rivera, JI Lew, ...
IEEE Electron Device Letters 36 (7), 672-674, 2015
222015
A New Unified Mobility Extraction Technique of In0.7Ga0.3As QW MOSFETs
JH Park, DK Kim, SW Son, SH Shin, TW Kim, JH Lee, DH Kim
IEEE Electron Device Letters 37 (9), 1096-1099, 2016
132016
Metal-semiconductor–metal varactors based on InAlN/GaN heterostructure with cutoff frequency of 308 GHz
DM Geum, SH Shin, SM Hong, JH Jang
IEEE Electron Device Letters 36 (4), 306-308, 2015
122015
MSM Varactor Diodes Based on HEMTs With Cut-Off Frequency of 908 GHz
SH Shin, DM Geum, JH Jang
IEEE Electron Device Letters 35 (2), 172-174, 2013
122013
Buried-Pt gate InP/In0. 52Al0. 48As/In0. 7Ga0. 3As pseudomorphic HEMTs
SH Shin, TW Kim, JI Song, JH Jang
Solid-state electronics 62 (1), 106-109, 2011
122011
A two-step-recess process based on atomic-layer etching for high-performance In0. 52Al0. 48As/In0. 53Ga0. 47As p-HEMTs
TW Kim, DH Kim, SD Park, SH Shin, SJ Jo, HJ Song, YM Park, JO Bae, ...
IEEE transactions on electron devices 55 (7), 1577, 2008
112008
Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s
CS Shin, WK Park, SH Shin, YD Cho, DH Ko, TW Kim, DH Koh, HM Kwon, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
102014
75 nm T‐shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short‐channel effect
DM Geum, SH Shin, MS Kim, JH Jang
Electronics letters 49 (24), 1536-1537, 2013
102013
Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate
SW Son, JH Park, JM Baek, DK Kim, SR Lee, SM Lee, J Yoon, J Kim, ...
IEEE Electron Device Letters 38 (6), 724-727, 2017
82017
High‐frequency characteristics of Lg = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al2O3 gate insulator
TW Kim, JS Kim, DK Kim, SH Shin, WS Park, S Banerjee, DH Kim
Electronics Letters 52 (10), 870-872, 2016
82016
Detection of current induced spin polarization in epitaxial Bi2Te3 thin film
R Dey, A Roy, T Pramanik, A Rai, S Heon Shin, S Majumder, LF Register, ...
Applied Physics Letters 110 (12), 122403, 2017
52017
Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ...
Applied Physics Letters 107 (18), 183509, 2015
52015
In0. 7Ga0. 3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of∼ 60 mV/dec
TW Kim, D Koh, H Kwon, CS Shin, WK Park, SH Shin, Y Cho, DH Ko, ...
Applied Physics Express 7 (7), 074201, 2014
52014
Performance and carrier transport analysis of In0. 7Ga0. 3As quantum-well MOSFETs with Al2O3/HfO2 gate stack
SW Son, JH Park, JM Baek, JS Kim, DK Kim, SH Shin, SK Banerjee, ...
Solid-State Electronics 123, 63-67, 2016
42016
Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam
BJ Park, JK Yeon, WS Lim, SK Kang, JW Bae, GY Yeom, MS Jhon, ...
Plasma Chemistry and Plasma Processing 30, 633-640, 2010
42010
Characteristics of 0.2 µm depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs
TW Kim, DH Kim, SH Shin, SJ Jo, JH Jang, JI Song
Electronics Letters 42 (20), 1178-1180, 2006
42006
Системата не може да изпълни операцията сега. Опитайте отново по-късно.
Статии 1–20