Radio Frequency Transistors and Circuits Based on CVD MoS2 A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ...
Nano letters 15 (8), 5039-5045, 2015
187 2015 Extremely high-frequency flexible graphene thin-film transistors S Park, SH Shin, MN Yogeesh, AL Lee, S Rahimi, D Akinwande
IEEE Electron Device Letters 37 (4), 512-515, 2016
60 2016 Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2 O3 /HfO2 (EOT < 1 nm) for low-power logic applications TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013
42 2013 High-performance III–V devices for future logic applications DH Kim, TW Kim, RH Baek, PD Kirsch, W Maszara, JA Del Alamo, ...
2014 IEEE International Electron Devices Meeting, 25.2. 1-25.2. 4, 2014
30 2014 Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2 O3 /HfO2 Gate-Stack TW Kim, HM Kwon, SH Shin, CS Shin, WK Park, E Chiu, M Rivera, JI Lew, ...
IEEE Electron Device Letters 36 (7), 672-674, 2015
23 2015 Buried-Pt gate InP/In0. 52Al0. 48As/In0. 7Ga0. 3As pseudomorphic HEMTs SH Shin, TW Kim, JI Song, JH Jang
Solid-state electronics 62 (1), 106-109, 2011
15 2011 A New Unified Mobility Extraction Technique of In0.7 Ga0.3 As QW MOSFETs JH Park, DK Kim, SW Son, SH Shin, TW Kim, JH Lee, DH Kim
IEEE Electron Device Letters 37 (9), 1096-1099, 2016
14 2016 Metal-semiconductor–metal varactors based on InAlN/GaN heterostructure with cutoff frequency of 308 GHz DM Geum, SH Shin, SM Hong, JH Jang
IEEE Electron Device Letters 36 (4), 306-308, 2015
12 2015 Sub-100 nm regrown S/D Gate-Last In0.7 Ga0.3 As QW MOSFETs with μn,eff > 5,500 cm2 /V-s CS Shin, WK Park, SH Shin, YD Cho, DH Ko, TW Kim, DH Koh, HM Kwon, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
12 2014 MSM Varactor Diodes Based on SH Shin, DM Geum, JH Jang
IEEE Electron Device Letters 35 (2), 172-174, 2013
12 2013 75 nm T‐shaped gate for In0.17 Al0.83 N/GaN HEMTs with minimal short‐channel effect DM Geum, SH Shin, MS Kim, JH Jang
Electronics letters 49 (24), 1536-1537, 2013
12 2013 A two-step-recess process based on atomic-layer etching for high-performance In0. 52Al0. 48As/In0. 53Ga0. 47As p-HEMTs TW Kim, DH Kim, SD Park, SH Shin, SJ Jo, HJ Song, YM Park, JO Bae, ...
IEEE transactions on electron devices 55 (7), 1577, 2008
11 2008 Record Effective Mobility Obtained From In0.53 Ga0.47 As/In0.52 Al0.48 As Quantum-Well MOSFETs on 300-mm Si Substrate SW Son, JH Park, JM Baek, DK Kim, SR Lee, SM Lee, J Yoon, J Kim, ...
IEEE Electron Device Letters 38 (6), 724-727, 2017
9 2017 High‐frequency characteristics of L g = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al2 O3 gate insulator TW Kim, JS Kim, DK Kim, SH Shin, WS Park, S Banerjee, DH Kim
Electronics Letters 52 (10), 870-872, 2016
8 2016 Damage free Ar ion plasma surface treatment on In0. 53Ga0. 47As-on-silicon metal-oxide-semiconductor device D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ...
Applied Physics Letters 107 (18), 2015
6 2015 Detection of current induced spin polarization in epitaxial Bi2Te3 thin film R Dey, A Roy, T Pramanik, A Rai, S Heon Shin, S Majumder, LF Register, ...
Applied Physics Letters 110 (12), 2017
5 2017 Performance and carrier transport analysis of In0. 7Ga0. 3As quantum-well MOSFETs with Al2O3/HfO2 gate stack SW Son, JH Park, JM Baek, JS Kim, DK Kim, SH Shin, SK Banerjee, ...
Solid-State Electronics 123, 63-67, 2016
5 2016 In0. 7Ga0. 3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of∼ 60 mV/dec TW Kim, D Koh, H Kwon, CS Shin, WK Park, SH Shin, Y Cho, DH Ko, ...
Applied Physics Express 7 (7), 074201, 2014
5 2014 Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2 /O2 Neutral Beam BJ Park, JK Yeon, WS Lim, SK Kang, JW Bae, GY Yeom, MS Jhon, ...
Plasma Chemistry and Plasma Processing 30, 633-640, 2010
4 2010 Characteristics of 0.2 µm depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs TW Kim, DH Kim, SH Shin, SJ Jo, JH Jang, JI Song
Electronics Letters 42 (20), 1178-1180, 2006
4 2006 
Tae-Woo KimUniversity of UlsanПотвърден имейл адрес: ulsan.ac.kr
