| Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact JT Leonard, EC Young, BP Yonkee, DA Cohen, T Margalith, ... Applied Physics Letters 107 (9), 2015 | 163 | 2015 |
| Hybrid tunnel junction contacts to III–nitride light-emitting diodes EC Young, BP Yonkee, F Wu, SH Oh, SP DenBaars, S Nakamura, ... Applied Physics Express 9 (2), 022102, 2016 | 145 | 2016 |
| Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture JT Leonard, DA Cohen, BP Yonkee, RM Farrell, T Margalith, S Lee, ... Applied Physics Letters 107 (1), 2015 | 106 | 2015 |
| Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction BP Yonkee, EC Young, SP DenBaars, S Nakamura, JS Speck Applied Physics Letters 109 (19), 2016 | 88 | 2016 |
| Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact BP Yonkee, EC Young, C Lee, JT Leonard, SP DenBaars, JS Speck, ... Optics express 24 (7), 7816-7822, 2016 | 85 | 2016 |
| Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching CO Holder, JT Leonard, RM Farrell, DA Cohen, B Yonkee, JS Speck, ... Applied Physics Letters 105 (3), 2014 | 80 | 2014 |
| Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture JT Leonard, BP Yonkee, DA Cohen, L Megalini, S Lee, JS Speck, ... Applied Physics Letters 108 (3), 2016 | 54 | 2016 |
| Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates D Hwang, BP Yonkee, BS Addin, RM Farrell, S Nakamura, JS Speck, ... Optics Express 24 (20), 22875-22880, 2016 | 46 | 2016 |
| Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to∼ 1 W SH Oh, BP Yonkee, M Cantore, RM Farrell, JS Speck, S Nakamura, ... Applied Physics Express 9 (10), 102102, 2016 | 43 | 2016 |
| Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts JT Leonard, DA Cohen, BP Yonkee, RM Farrell, SP DenBaars, JS Speck, ... Journal of Applied Physics 118 (14), 2015 | 43 | 2015 |
| High wall-plug efficiency blue III-nitride LEDs designed for low current density operation LY Kuritzky, AC Espenlaub, BP Yonkee, CD Pynn, SP DenBaars, ... Optics express 25 (24), 30696-30707, 2017 | 36 | 2017 |
| Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells SJ Kowsz, EC Young, BP Yonkee, CD Pynn, RM Farrell, JS Speck, ... Optics Express 25 (4), 3841-3849, 2017 | 20 | 2017 |
| Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202 1) AlGaN/GaN buffer layers EC Young, BP Yonkee, F Wu, BK Saifaddin, DA Cohen, SP DenBaars, ... Journal of Crystal Growth 425, 389-392, 2015 | 17 | 2015 |
| Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts JT Leonard, EC Young, BP Yonkee, DA Cohen, C Shen, T Margalith, ... Gallium Nitride Materials and Devices XI 9748, 125-137, 2016 | 15 | 2016 |
| Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN BP Yonkee, RM Farrell, JT Leonard, SP DenBaars, JS Speck, ... Semiconductor Science and Technology 30 (7), 075007, 2015 | 15 | 2015 |
| Flip-chip blue LEDs grown on bulk GaN substrates utilizing photoelectrochemical etching for substrate removal BP Yonkee, B SaifAddin, JT Leonard, SP DenBaars, S Nakamura Applied Physics Express 9 (5), 056502, 2016 | 12 | 2016 |
| Solid and hollow inorganic replicas of biological photonic crystals MR Jorgensen, BP Yonkee, MH Bartl Scripta Materialia 65 (11), 954-957, 2011 | 11 | 2011 |
| Hybrid growth method for III-nitride tunnel junction devices EC Young, BP Yonkee, JT Leonard, T Margalith, JS Speck, SP Denbaars, ... US Patent 11,217,722, 2022 | 8 | 2022 |
| III-nitride tunnel junction with modified PN interface BP Yonkee, EC Young, JT Leonard, T Margalith, JS Speck, SP DenBaars, ... US Patent 10,685,835, 2020 | 7 | 2020 |
| High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum BP Yonkee, EC Young, SP DenBaars, JS Speck, S Nakamura Semiconductor Science Technology 33 (1), 015015, 2018 | 7 | 2018 |
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraПотвърден имейл адрес: engineering.ucsb.edu
