Следене
Jung Hwan  Yum
Jung Hwan Yum
Sematech
Потвърден имейл адрес: utexas.edu
Заглавие
Позовавания
Позовавания
Година
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
1642010
Grain boundary-driven leakage path formation in HfO2 dielectrics
G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
1572011
Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminum …
JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ...
ECS Journal of Solid State Science and Technology 6 (10), N189, 2017
1102017
Effects of barrier layers on device performance of high mobility In0. 7Ga0. 3As metal-oxide-semiconductor field-effect-transistors
H Zhao, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 96 (10), 2010
792010
High performance In0. 7Ga0. 3As metal-oxide-semiconductor transistors with mobility> 4400 cm2/V s using InP barrier layer
H Zhao, YT Chen, JH Yum, Y Wang, N Goel, JC Lee
Applied Physics Letters 94 (19), 2009
712009
300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique
KW Ang, J Barnett, WY Loh, J Huang, BG Min, PY Hung, I Ok, JH Yum, ...
2011 International Electron Devices Meeting, 35.5. 1-35.5. 4, 2011
702011
Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0. 53Ga0. 47As and InP using physical vapor deposition HfO2 and silicon …
IJ Ok, H Kim, M Zhang, F Zhu, S Park, J Yum, H Zhao, D Garcia, P Majhi, ...
Applied Physics Letters 92 (20), 2008
692008
Effects of gate-first and gate-last process on interface quality of In0. 53Ga0. 47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides
H Zhao, J Huang, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 95 (25), 2009
612009
Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
H Zhao, D Shahrjerdi, F Zhu, M Zhang, HS Kim, I Ok, JH Yum, SI Park, ...
Applied Physics Letters 92 (23), 2008
58*2008
Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI
I Ok, K Akarvardar, S Lin, M Baykan, CD Young, PY Hung, MP Rodgers, ...
2010 International Electron Devices Meeting, 34.2. 1-34.2. 4, 2010
572010
Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices
JH Yum, T Akyol, M Lei, T Hudnall, G Bersuker, M Downer, CW Bielawski, ...
Journal of Applied Physics 109 (6), 2011
512011
A study of metal-oxide-semiconductor capacitors on GaAs, In0. 53Ga0. 47As, InAs, and InSb substrates using a germanium interfacial passivation layer
HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, P Majhi, ...
Applied Physics Letters 93 (6), 2008
452008
Improved electrical characteristics of TaN/Al2O3/In0. 53Ga0. 47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation
YT Chen, H Zhao, JH Yum, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 95 (1), 2009
442009
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, J Oh, ...
Applied Physics Letters 92 (3), 2008
412008
Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer
HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee
Applied Physics Letters 91 (4), 2007
412007
In0. 53Ga0. 47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics
H Zhao, JH Yum, YT Chen, JC Lee
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
382009
Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕ HfO2 gate dielectric
H Zhao, D Shahrjerdi, F Zhu, HS Kim, I Ok, M Zhang, JH Yum, ...
Applied Physics Letters 92 (25), 2008
382008
A study of highly crystalline novel beryllium oxide film using atomic layer deposition
JH Yum, T Akyol, M Lei, DA Ferrer, TW Hudnall, M Downer, CW Bielawski, ...
Journal of Crystal Growth 334 (1), 126-133, 2011
372011
Evidence for hydrogen two-level systems in atomic layer deposition oxides
MS Khalil, MJA Stoutimore, S Gladchenko, AM Holder, CB Musgrave, ...
Applied Physics Letters 103 (16), 2013
362013
Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å
YT Chen, H Zhao, JH Yum, Y Wang, JC Lee
Applied Physics Letters 94 (21), 2009
362009
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Статии 1–20