Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
157 2010 Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
138 2011 Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminum … JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ...
ECS Journal of Solid State Science and Technology 6 (10), N189, 2017
89 2017 Effects of barrier layers on device performance of high mobility H Zhao, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 96 (10), 102101, 2010
79 2010 High performance H Zhao, YT Chen, JH Yum, Y Wang, N Goel, JC Lee
Applied Physics Letters 94 (19), 193502, 2009
70 2009 Self-aligned IJ Ok, H Kim, M Zhang, F Zhu, S Park, J Yum, H Zhao, D Garcia, P Majhi, ...
Applied Physics Letters 92 (20), 202903, 2008
68 2008 300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj ∼5nm) formed with molecular monolayer doping technique KW Ang, J Barnett, WY Loh, J Huang, BG Min, PY Hung, I Ok, JH Yum, ...
2011 International Electron Devices Meeting, 35.5. 1-35.5. 4, 2011
67 2011 Effects of gate-first and gate-last process on interface quality of In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al 2 O 3 and HfO 2 oxides H Zhao, J Huang, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 95 (25), 253501, 2009
60 2009 Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI I Ok, K Akarvardar, S Lin, M Baykan, CD Young, PY Hung, MP Rodgers, ...
2010 International Electron Devices Meeting, 34.2. 1-34.2. 4, 2010
56 2010 Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices JH Yum, T Akyol, M Lei, T Hudnall, G Bersuker, M Downer, CW Bielawski, ...
Journal of Applied Physics 109 (6), 064101, 2011
50 2011 Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited H Zhao, D Shahrjerdi, F Zhu, M Zhang, HS Kim, I Ok, JH Yum, SI Park, ...
Applied Physics Letters 92 (23), 233508, 2008
46 * 2008 Improved electrical characteristics of YT Chen, H Zhao, JH Yum, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 95 (1), 013501, 2009
44 2009 A study of metal-oxide-semiconductor capacitors on GaAs, HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, P Majhi, ...
Applied Physics Letters 93 (6), 062111, 2008
44 2008 Inversion-type enhancement-mode HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, J Oh, ...
Applied Physics Letters 92 (3), 032907, 2008
40 2008 Gate oxide scaling down in HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee
Applied Physics Letters 91 (4), 042904, 2007
39 2007 In0. 53Ga0. 47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics H Zhao, JH Yum, YT Chen, JC Lee
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
38 2009 Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of H Zhao, D Shahrjerdi, F Zhu, HS Kim, I Ok, M Zhang, JH Yum, ...
Applied Physics Letters 92 (25), 253506, 2008
38 2008 A study of highly crystalline novel beryllium oxide film using atomic layer deposition JH Yum, T Akyol, M Lei, DA Ferrer, TW Hudnall, M Downer, CW Bielawski, ...
Journal of Crystal Growth 334 (1), 126-133, 2011
36 2011 Metal-oxide-semiconductor field-effect-transistors on indium phosphide using YT Chen, H Zhao, JH Yum, Y Wang, JC Lee
Applied Physics Letters 94 (21), 213505, 2009
36 2009 Evidence for hydrogen two-level systems in atomic layer deposition oxides MS Khalil, MJA Stoutimore, S Gladchenko, AM Holder, CB Musgrave, ...
Applied Physics Letters 103 (16), 162601, 2013
32 2013 
Chen Yen-TingUT AustinПотвърден имейл адрес: mail.utexas.edu
