Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes P Waltereit, O Brandt, A Trampert, HT Grahn, J Menniger, M Ramsteiner, ...
nature 406 (6798), 865-868, 2000
2148 2000 Origin of high-temperature ferromagnetism in (Ga, Mn) N layers grown on 4H–SiC (0001) by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, L Däweritz, KJ Friedland, KH Ploog, ...
Applied Physics Letters 82 (13), 2077-2079, 2003
245 2003 X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films VM Kaganer, O Brandt, A Trampert, KH Ploog
Physical Review B 72 (4), 045423, 2005
244 2005 On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy J Ristić, E Calleja, S Fernández-Garrido, L Cerutti, A Trampert, U Jahn, ...
Journal of crystal growth 310 (18), 4035-4045, 2008
226 2008 Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ...
physica status solidi (b) 244 (8), 2816-2837, 2007
208 2007 Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius V Consonni, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B 81 (8), 085310, 2010
193 2010 Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1 1̄ 00) grown on γ-LiAlO 2 YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ...
Journal of Applied Physics 92 (10), 5714-5719, 2002
193 2002 Wurtzite GaN nanocolumns grown on Si (001) by molecular beam epitaxy L Cerutti, J Ristić, S Fernández-Garrido, E Calleja, A Trampert, KH Ploog, ...
Applied physics letters 88 (21), 2006
188 2006 Correlation of structure and magnetism in GaAs with embedded Mn (Ga) As magnetic nanoclusters M Moreno, A Trampert, B Jenichen, L Däweritz, KH Ploog
Journal of Applied Physics 92 (8), 4672-4677, 2002
184 2002 Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ...
Nanotechnology 21 (30), 305201, 2010
182 2010 Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten
Physical Review B 72 (24), 245203, 2005
177 2005 High resolution transmission electron microscopy studies of the Ag/MgO interface A Trampert, F Ernst, CP Flynn, HF Fischmeister, M Ru
Acta metallurgica et materialia 40, S227-S236, 1992
172 1992 The nanorod approach: GaN NanoLEDs for solid state lighting A Waag, X Wang, S Fündling, J Ledig, M Erenburg, R Neumann, ...
physica status solidi c 8 (7‐8), 2296-2301, 2011
167 2011 Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction Y He, P Tang, Z Hu, Q He, C Zhu, L Wang, Q Zeng, P Golani, G Gao, W Fu, ...
Nature communications 11 (1), 57, 2020
163 2020 Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001) P Waltereit, O Brandt, A Trampert, M Ramsteiner, M Reiche, M Qi, ...
Applied physics letters 74 (24), 3660-3662, 1999
163 1999 Clustering in a precipitate-free GeMn magnetic semiconductor D Bougeard, S Ahlers, A Trampert, N Sircar, G Abstreiter
Physical Review Letters 97 (23), 237202, 2006
162 2006 Characterization of GaN quantum discs embedded in J Ristić, E Calleja, MA Sanchez-Garcia, JM Ulloa, J Sanchez-Paramo, ...
Physical Review B 68 (12), 125305, 2003
160 2003 Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer V Consonni, M Hanke, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B 83 (3), 035310, 2011
148 2011 Observation of spin-glass behavior in homogeneous (Ga, Mn) N layers grown by reactive molecular-beam epitaxy S Dhar, O Brandt, A Trampert, KJ Friedland, YJ Sun, KH Ploog
Physical Review B 67 (16), 165205, 2003
146 2003 Metal–Semiconductor Phase‐Transition in WSe2(1‐ x ) Te2 x P Yu, J Lin, L Sun, QL Le, X Yu, G Gao, CH Hsu, D Wu, TR Chang, ...
Advanced Materials 29 (4), 1603991, 2017
143 2017 