| Integrated Circuits Based on Bilayer MoS2 Transistors H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ... Nano letters 12 (9), 4674-4680, 2012 | 2005 | 2012 |
| Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition X Ling, YH Lee, Y Lin, W Fang, L Yu, MS Dresselhaus, J Kong Nano letters 14 (2), 464-472, 2014 | 847 | 2014 |
| Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces YH Lee, L Yu, H Wang, W Fang, X Ling, Y Shi, CT Lin, JK Huang, ... Nano letters 13 (4), 1852-1857, 2013 | 780 | 2013 |
| Dielectric Screening of Excitons and Trions in Single-Layer MoS2 Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ... Nano letters 14 (10), 5569-5576, 2014 | 695 | 2014 |
| Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ... Nano letters 14 (6), 3055-3063, 2014 | 686 | 2014 |
| Lima: Less is more for alignment C Zhou, P Liu, P Xu, S Iyer, J Sun, Y Mao, X Ma, A Efrat, P Yu, L Yu, ... arXiv preprint arXiv:2305.11206, 2023 | 658 | 2023 |
| Parallel stitching of 2D materials X Ling, Y Lin, Q Ma, Z Wang, Y Song, L Yu, S Huang, W Fang, X Zhang, ... Advanced materials 28 (12), 2322-2329, 2016 | 260 | 2016 |
| High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits L Yu, A Zubair, EJG Santos, X Zhang, Y Lin, Y Zhang, T Palacios Nano letters 15 (8), 4928-4934, 2015 | 256 | 2015 |
| High-risk breast lesions: a machine learning model to predict pathologic upgrade and reduce unnecessary surgical excision M Bahl, R Barzilay, AB Yedidia, NJ Locascio, L Yu, CD Lehman Radiology 286 (3), 810-818, 2018 | 197 | 2018 |
| Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ... Nano letters 16 (10), 6349-6356, 2016 | 181 | 2016 |
| Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ... IEEE, 2015 | 163 | 2015 |
| Functionalized graphene for high-performance two-dimensional spintronics devices L Li, R Qin, H Li, L Yu, Q Liu, G Luo, Z Gao, J Lu ACS nano 5 (4), 2601-2610, 2011 | 130 | 2011 |
| Suggesting a response to a message by selecting a template using a neural network L Yu, CD Fox, S Henry US Patent App. 16/035,062, 2020 | 116 | 2020 |
| Design space and origin of off-state leakage in GaN vertical power diodes Y Zhang, HY Wong, M Sun, S Joglekar, L Yu, NA Braga, RV Mickevicius, ... 2015 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2015 | 103 | 2015 |
| Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition H Wang, L Yu, YH Lee, W Fang, A Hsu, P Herring, M Chin, M Dubey, LJ Li, ... 2012 International Electron Devices Meeting, 4.6. 1-4.6. 4, 2012 | 98 | 2012 |
| Electronics including graphene-based hybrid structures L Yu, H Wang, T Palacios US Patent App. 15/034,051, 2016 | 94 | 2016 |
| Scaling Autoregressive Multi-Modal Models: Pretraining and Instruction Tuning L Yu, B Shi, R Pasunuru, B Muller, O Golovneva, T Wang, A Babu, B Tang, ... arXiv preprint arXiv:2309.02591, 2023 | 88 | 2023 |
| High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios IEEE Electron Device Letters 38 (2), 248-251, 2016 | 84 | 2016 |
| Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ... 2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016 | 76 | 2016 |
| Megabyte: Predicting million-byte sequences with multiscale transformers L Yu, D Simig, C Flaherty, A Aghajanyan, L Zettlemoyer, M Lewis arXiv preprint arXiv:2305.07185, 2023 | 64 | 2023 |
Tomás PalaciosMITПотвърден имейл адрес: mit.edu
