Ying-Chen Daphne Chen
Ying-Chen Daphne Chen
Потвърден имейл адрес: nau.edu - Начална страница
“Cut‐and‐paste” manufacture of multiparametric epidermal sensor systems
S Yang, YC Chen, L Nicolini, P Pasupathy, J Sacks, B Su, R Yang, ...
Advanced Materials 27 (41), 6423-6430, 2015
Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ...
Nano letters 14 (2), 813-818, 2014
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 043709, 2014
CMOS and Memristive Hardware for Neuromorphic Computing
M Rahimi Azghadi, YC Chen, JK Eshraghian, J Chen, CY Lin, ...
Advanced Intelligent Systems, 1900189, 2020
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ...
Nanoscale 9 (25), 8586-8590, 2017
Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 043708, 2014
Control of AMIRA’s ball and beam system via improved fuzzy feedback linearization approach
TL Chien, CC Chen, MC Tsai, YC Chen
Applied Mathematical Modelling 34 (12), 3791-3804, 2010
Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
YF Chang, B Fowler, F Zhou, YC Chen, JC Lee
Applied Physics Letters 108 (3), 033504, 2016
Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications
YF Chang, F Zhou, BW Fowler, YC Chen, CC Hsieh, L Guckert, ...
IEEE Transactions on Electron Devices 64 (7), 2977-2983, 2017
A novel resistive switching identification method through relaxation characteristics for sneak-path-constrained selectorless RRAM application
YC Chen, CC Lin, ST Hu, CY Lin, B Fowler, J Lee
Scientific Reports 9 (1), 1-6, 2019
Graphite-based Selectorless RRAM: Improvable Intrinsic Nonlinearity for Array Applications
YC Chen, ST Hu, CY Lin, BW Fowler, H Huang, CC Lin, S Kim, YF Chang, ...
Nanoscale, 2018
Dynamic conductance characteristics in HfO x-based resistive random access memory
YC Chen, YF Chang, X Wu, F Zhou, M Guo, CY Lin, CC Hsieh, B Fowler, ...
RSC advances 7 (21), 12984-12989, 2017
Ultralow power switching in a silicon-rich SiN y/SiN x double-layer resistive memory device
S Kim, YF Chang, MH Kim, S Bang, TH Kim, YC Chen, JH Lee, BG Park
Physical Chemistry Chemical Physics 19 (29), 18988-18995, 2017
Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices
MQ Guo, YC Chen, CY Lin, YF Chang, B Fowler, QQ Li, J Lee, YG Zhao
Applied Physics Letters 110 (23), 233504, 2017
The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector
CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ...
IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018
Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
YC Chen, CY Lin, HC Huang, S Kim, B Fowler, YF Chang, X Wu, G Xu, ...
Journal of Physics D: Applied Physics 51 (5), 055108, 2018
Device Research Conference (DRC)
YF Chang, YC Chen, J Li, F Xue, Y Wang, F Zhou, B Fowler, JC Lee
70th Annual 49, 2012
Post-moore memory technology: Sneak path current (spc) phenomena on rram crossbar array and solutions
YC Chen, CC Lin, YF Chang
Micromachines 12 (1), 50, 2021
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