Alexander Zaslavsky
Alexander Zaslavsky
Professor of Engineering, Brown University
Verified email at - Homepage
Cited by
Cited by
Preparation of (In, Mn) As/(Ga, Al) Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
H Munekata, A Zaslavsky, P Fumagalli, RJ Gambino
Applied physics letters 63 (21), 2929-2931, 1993
Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz
YP Li, A Zaslavsky, DC Tsui, M Santos, M Shayegan
Physical Review B 41 (12), 8388, 1990
Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures
A Zaslavsky, VJ Goldman, DC Tsui, JE Cunningham
Applied physics letters 53 (15), 1408-1410, 1988
Lateral interband tunneling transistor in silicon-on-insulator
C Aydin, A Zaslavsky, S Luryi, S Cristoloveanu, D Mariolle, D Fraboulet, ...
Applied Physics Letters 84 (10), 1780-1782, 2004
Future trends in microelectronics
S Luryi, J Xu, A Zaslavsky
Wiley, 1999
A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
IEEE Electron Device Letters 33 (2), 179-181, 2011
Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 65, 226-233, 2011
Designing logic circuits for probabilistic computation in the presence of noise
K Nepal, RI Bahar, J Mundy, WR Patterson, A Zaslavsky
Proceedings of the 42nd Annual Design Automation Conference, 485-490, 2005
A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan, A Zaslavsky
IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016
Switching device based on first-order metal-insulator transition induced by external electric field
F Chudnovskiy, S Luryi, B Spivak
Future trends in microelectronics: the nano millennium 148, 2002
Photonic band gap quantum well and quantum box structures: A high‐Q resonant cavity
SY Lin, VM Hietala, SK Lyo, A Zaslavsky
Applied Physics Letters 68 (23), 3233-3235, 1996
Future Trends in Microelectronics: Frontiers and Innovations
S Luryi, J Xu, A Zaslavsky
John Wiley & Sons, 2013
Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier, ...
Applied Physics Letters 94 (26), 263508, 2009
A tunneling field effect transistor model combining interband tunneling with channel transport
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Journal of Applied Physics 110 (10), 104503, 2011
Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires
HT Johnson, LB Freund, CD Akyüz, A Zaslavsky
Journal of applied physics 84 (7), 3714-3725, 1998
Reduction of reflection losses in using motheye antireflection surface relief structures
C Aydin, A Zaslavsky, GJ Sonek, J Goldstein
Applied physics letters 80 (13), 2242-2244, 2002
Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 84, 147-154, 2013
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
J Wan, S Cristoloveanu, C Le Royer, A Zaslavsky
Solid-State Electronics 76, 109-111, 2012
A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-state electronics 90, 2-11, 2013
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
S Cosentino, P Liu, ST Le, S Lee, D Paine, A Zaslavsky, D Pacifici, ...
Applied Physics Letters 98 (22), 221107, 2011
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