Следене
Nitin Prasad
Nitin Prasad
IBM Research
Потвърден имейл адрес: ibm.com
Заглавие
Позовавания
Позовавания
Година
Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- Heterostructures
GW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ...
Physical review letters 120 (17), 177702, 2018
1322018
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ...
Nano letters 17 (6), 3919-3925, 2017
642017
Effects of electrode layer band structure on the performance of multilayer graphene–hBN–graphene interlayer tunnel field effect transistors
S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...
Nano letters 16 (8), 4975-4981, 2016
422016
Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures
K Kim, N Prasad, HCP Movva, GW Burg, Y Wang, S Larentis, T Taniguchi, ...
Nano letters 18 (9), 5967-5973, 2018
332018
Conversion of spin current into charge current in a topological insulator: Role of the interface
R Dey, N Prasad, LF Register, SK Banerjee
Physical Review B 97 (17), 174406, 2018
282018
ReS2-based interlayer tunnel field effect transistor
OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ...
Journal of Applied Physics 122 (24), 2017
122017
Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications
S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ...
Journal of Physics D: Applied Physics 50 (38), 383002, 2017
112017
An improved quasi-saturation and charge model for SOI-LDMOS transistors
N Prasad, P Sarangapani, KNS Nikhil, N DasGupta, A DasGupta, ...
IEEE Transactions on Electron Devices 62 (3), 919-926, 2015
92015
Implementation of a binary neural network on a passive array of magnetic tunnel junctions
JM Goodwill, N Prasad, BD Hoskins, MW Daniels, A Madhavan, L Wan, ...
Physical Review Applied 18 (1), 014039, 2022
72022
Associative memories using complex-valued Hopfield networks based on spin-torque oscillator arrays
N Prasad, P Mukim, A Madhavan, MD Stiles
Neuromorphic Computing and Engineering 2 (3), 034003, 2022
72022
Quantum lifetime spectroscopy and magnetotunneling in double bilayer graphene heterostructures
N Prasad, GW Burg, K Watanabe, T Taniguchi, LF Register, E Tutuc
Physical Review Letters 127 (11), 117701, 2021
72021
A nano-satellite mission to study charged particle precipitation from the Van Allen radiation belts caused due to Seismo-electromagnetic emissions
N Sivadas, A Gulati, D Kannapan, AS Yalamarthy, A Dhiman, A Bhagoji, ...
arXiv preprint arXiv:1411.6034, 2014
72014
Emergence of interlayer coherence in twist-controlled graphene double layers
KA Lin, N Prasad, GW Burg, B Zou, K Ueno, K Watanabe, T Taniguchi, ...
Physical Review Letters 129 (18), 187701, 2022
42022
Realizing both short-and long-term memory within a single magnetic tunnel junction based synapse
N Prasad, T Pramanik, SK Banerjee, LF Register
Journal of Applied Physics 127 (9), 2020
42020
Multi-barrier inter-layer tunnel field-effect transistor
N Prasad, X Mou, LF Register, SK Banerjee
2016 IEEE International Electron Devices Meeting (IEDM), 30.4. 1-30.4. 4, 2016
42016
Method to enhance resonant interlayer tunneling in bilayer-graphene systems
N Prasad, X Wu, SK Banerjee, LF Register
Journal of Computational Electronics, 2021
22021
Numerical solution of large scale sparse matrix equations in python
B Baran, M Köhler, N Prasad, J Saak
PAMM 14 (1), 959-960, 2014
22014
Interfacing CM. ESS with Python
B Baran, M Köhler, N Prasad, J Saak
Max Planck Institute Magdeburg, 2013
22013
Neural networks three ways: unlocking novel computing schemes using magnetic tunnel junction stochasticity
MW Daniels, WA Borders, N Prasad, A Madhavan, S Gibeault, T Adeyeye, ...
Spintronics XVI 12656, 84-94, 2023
12023
Characterization of noise in cmos ring oscillators at cryogenic temperatures
P Mukim, PR Shrestha, A Madhavan, N Prasad, J Campbell, FD Brewer, ...
IEEE Electron Device Letters, 2023
12023
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Статии 1–20