Следене
Man Hoi Wong
Man Hoi Wong
Associate Professor, ECE, Hong Kong University of Science and Technology
Потвърден имейл адрес: ust.hk
Заглавие
Позовавания
Позовавания
Година
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
M Higashiwaki, K Sasaki, T Kamimura, MH Wong, D Krishnamurthy, ...
Applied Physics Letters 103 (12), 123511, 2013
7582013
Field-Plated Ga< sub> 2</sub> O< sub> 3</sub> MOSFETs With a Breakdown Voltage of Over 750 V
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Electron Device Letters, IEEE 37 (2), 212-215, 2016
560*2016
How to make ohmic contacts to organic semiconductors
Y Shen, AR Hosseini, MH Wong, GG Malliaras
ChemPhysChem 5 (1), 16-25, 2004
4052004
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors
S Rajan, A Chini, MH Wong, JS Speck, UK Mishra
Journal of Applied Physics 102 (4), 2007
2892007
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, Nidhi, S Dasgupta, DJ Denninghoff, S Kolluri, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
2522013
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
T Kamimura, K Sasaki, MH Wong, D Krishnamurthy, A Kuramata, T Masui, ...
Applied Physics Letters 104 (19), 192104, 2014
2342014
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
MH Wong, Y Nakata, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Express 10 (4), 041101, 2017
2012017
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
S Chowdhury, BL Swenson, MH Wong, UK Mishra
Semiconductor Science and Technology 28 (7), 074014, 2013
1932013
CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion
S Chowdhury, MH Wong, BL Swenson, UK Mishra
Electron Device Letters, IEEE 33 (1), 41-43, 2012
1922012
Acceptor doping of β-Ga2O3 by Mg and N ion implantations
MH Wong, CH Lin, A Kuramata, S Yamakoshi, H Murakami, Y Kumagai, ...
Applied Physics Letters 113 (10), 2018
1822018
Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
CH Lin, Y Yuda, MH Wong, M Sato, N Takekawa, K Konishi, T Watahiki, ...
IEEE Electron Device Letters 40 (9), 1487-1490, 2019
1812019
Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N-and Si-Ion Implantation Doping
MH Wong, K Goto, H Murakami, Y Kumagai, M Higashiwaki
IEEE Electron Device Letters 40 (3), 431-434, 2019
1802019
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Japanese Journal of Applied Physics 55 (12), 1202B9, 2016
1302016
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki
IEEE Transactions on Electron Devices 67 (10), 3925-3937, 2020
1242020
Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Letters 106 (3), 2015
1102015
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
Applied Physics Letters 109 (19), 193503, 2016
1092016
Growth and electrical characterization of N-face AlGaN/GaN heterostructures
S Rajan, M Wong, Y Fu, F Wu, JS Speck, UK Mishra
Japanese journal of applied physics 44 (11L), L1478, 2005
1082005
Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation
MH Wong, A Takeyama, T Makino, T Ohshima, K Sasaki, A Kuramata, ...
Applied Physics Letters 112 (2), 023503, 2018
1052018
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ...
Applied Physics Letters 99 (22), 2011
1052011
Enhancement-Mode β-Ga2O3 Current Aperture Vertical MOSFETs with N-Ion-Implanted Blocker
MH Wong, H Murakami, Y Kumagai, M Higashiwaki
IEEE Electron Device Letters 41 (2), 296-299, 2020
1032020
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