| Perpendicular reading of single confined magnetic skyrmions DM Crum, M Bouhassoune, J Bouaziz, B Schweflinghaus, S Blügel, ... Nature communications 6 (1), 8541, 2015 | 132 | 2015 |
| Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations DM Crum, A Valsaraj, JK David, LF Register, SK Banerjee Journal of Applied Physics 120 (22), 2016 | 8 | 2016 |
| Perpendicular reading of single confined magnetic skyrmions Nat DM Crum, M Bouhassoune, J Bouaziz, B Schweflinghaus, S Blugel, ... Commun 6, 8541, 2015 | 6 | 2015 |
| Monte Carlo Study of Si, Ge, and In0.53Ga0.47As n-Channel FinFET Scaling: Channel Orientation, Quantum Confinement, Doping, and Contacts AA Bhatti, N Navlakha, DM Crum, SK Banerjee, LF Register IEEE Nanotechnology Magazine 14 (6), 17-31, 2020 | 4 | 2020 |
| Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0. 53Ga0. 47As n-channel FinFETs AA Bhatti, DM Crum, A Valsaraj, LF Register, SK Banerjee Journal of Applied Physics 126 (10), 2019 | 3 | 2019 |
| Impact of gate oxide complex band structure on n-channel III–V FinFETs DM Crum, A Valsaraj, LF Register, SK Banerjee, B Sahu, Z Krivakopic, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 2 | 2015 |
| Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs DM Crum, A Valsaraj, LF Register, SK Banerjee 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 2 | 2014 |
| Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer DS Lavric, O Golonzka, T Ghani US Patent App. 17/030,346, 2022 | 1 | 2022 |
| Self-aligned gate endcap (SAGE) architectures with gate-all-around devices B Guha, W Hsu, LP Guler, T Ghani US Patent 11,855,223, 2023 | | 2023 |
| Fabrication of gate-all-around integrated circuit structures having additive metal gates DS Lavric, O Saadat, O Golonzka, T Ghani US Patent App. 17/031,832, 2022 | | 2022 |
| Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer DS Lavric, O Saadat, O Golonzka, T Ghani US Patent App. 17/030,333, 2022 | | 2022 |
| Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer DG Ouellette, DB O'brien, O Acton, L BAUMGARTEL, DS Lavric, ... US Patent App. 17/030,350, 2022 | | 2022 |
| Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit AA Bhatti, DM Crum, A Valsaraj, LF Register, SK Banerjee arXiv preprint arXiv:1903.12281, 2019 | | 2019 |
| Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering DM Crum, A Valsaraj, JK David, LF Register, SK Banerjee arXiv preprint arXiv:1604.00085, 2016 | | 2016 |
| Advanced modeling for end-of-the-roadmap CMOS and potential beyond-CMOS applications DM Crum | | 2016 |
| 2020 Index IEEE Nanotechnology Magazine Vol. 14 M Abdelgawad, F Alnaimat, M Anantram, N Athreya, S Bandyopadhyay, ... | | |
