Следене
Emanuel Tutuc
Emanuel Tutuc
Потвърден имейл адрес: mer.utexas.edu - Начална страница
Заглавие
Позовавания
Позовавания
Година
Large-area synthesis of high-quality and uniform graphene films on copper foils
X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ...
science 324 (5932), 1312-1314, 2009
126802009
Realization of a high mobility dual-gated graphene field-effect transistor with dielectric
S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee
Applied Physics Letters 94 (6), 062107, 2009
12332009
The role of surface oxygen in the growth of large single-crystal graphene on copper
Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ...
Science 342 (6159), 720-723, 2013
11402013
Evidence for moiré excitons in van der Waals heterostructures
K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ...
Nature 567 (7746), 71-75, 2019
7722019
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
S Larentis, B Fallahazad, E Tutuc
Applied Physics Letters 101 (22), 223104, 2012
5522012
van der Waals heterostructures with high accuracy rotational alignment
K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
4572016
Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances
C Wu, N Arju, G Kelp, JA Fan, J Dominguez, E Gonzales, E Tutuc, I Brener, ...
Nature communications 5 (1), 1-9, 2014
4462014
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene
K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ...
Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017
3992017
Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing
E Tutuc, M Shayegan, DA Huse
Physical review letters 93 (3), 036802, 2004
3722004
Hubbard model physics in transition metal dichalcogenide moiré bands
F Wu, T Lovorn, E Tutuc, AH MacDonald
Physical review letters 121 (2), 026402, 2018
3382018
Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device
SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald
IEEE Electron Device Letters 30 (2), 158-160, 2008
2792008
Topological insulators in twisted transition metal dichalcogenide homobilayers
F Wu, T Lovorn, E Tutuc, I Martin, AH MacDonald
Physical review letters 122 (8), 086402, 2019
2632019
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ACS nano 9 (10), 10402-10410, 2015
2342015
Coulomb drag of massless fermions in graphene
S Kim, I Jo, J Nah, Z Yao, SK Banerjee, E Tutuc
Physical Review B 83 (16), 161401, 2011
2152011
Resistance spikes at transitions between quantum Hall ferromagnets
EP De Poortere, E Tutuc, SJ Papadakis, M Shayegan
Science 290 (5496), 1546-1549, 2000
2012000
Correlated insulating states in twisted double bilayer graphene
GW Burg, J Zhu, T Taniguchi, K Watanabe, AH MacDonald, E Tutuc
Physical review letters 123 (19), 197702, 2019
1982019
Topologically protected helical states in minimally twisted bilayer graphene
S Huang, K Kim, DK Efimkin, T Lovorn, T Taniguchi, K Watanabe, ...
Physical review letters 121 (3), 037702, 2018
1882018
Photonic-crystal exciton-polaritons in monolayer semiconductors
L Zhang, R Gogna, W Burg, E Tutuc, H Deng
Nature communications 9 (1), 1-8, 2018
1862018
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
1842015
Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy
A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ...
ACS applied materials & interfaces 8 (11), 7396-7402, 2016
1792016
Системата не може да изпълни операцията сега. Опитайте отново по-късно.
Статии 1–20