Martin Stutzmann
Martin Stutzmann
Professor (retired) of Experimental Physics, Walter Schottky Institut, TU München
Потвърден имейл адрес: wsi.tum.de - Начална страница
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
M Stutzmann, WB Jackson, CC Tsai
Physical Review B 32 (1), 23, 1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation
MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona
Solid State Communications 81 (4), 307-312, 1992
Optical constants of epitaxial AlGaN films and their temperature dependence
D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ...
Journal of applied physics 82 (10), 5090-5096, 1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ...
Philosophical magazine A 77 (4), 1013-1025, 1998
Protein-modified nanocrystalline diamond thin films for biosensor applications
A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ...
Nature materials 3 (10), 736-742, 2004
Black nonreflecting silicon surfaces for solar cells
S Koynov, MS Brandt, M Stutzmann
Applied physics letters 88 (20), 2006
The defect density in amorphous silicon
M Stutzmann
Philosophical Magazine B 60 (4), 531-546, 1989
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ...
Japanese journal of applied physics 38 (3A), L217, 1999
Determination of the Al mole fraction and the band gap bowing of epitaxial films
H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ...
Applied Physics Letters 71 (11), 1504-1506, 1997
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Chemical control of the charge state of nitrogen-vacancy centers in diamond
MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ...
Physical Review B 83 (8), 081304, 2011
Sound velocity of thin films obtained by surface acoustic-wave measurements
C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ...
Applied Physics Letters 72 (19), 2400-2402, 1998
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff
Applied Physics Letters 83 (1), 177-179, 2003
Detailed investigation of doping in hydrogenated amorphous silicon and germanium
M Stutzmann, DK Biegelsen, RA Street
Physical Review B 35 (11), 5666, 1987
Electronic properties of semiconducting FeSi2 films
CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ...
Journal of applied physics 68 (4), 1726-1734, 1990
Optical process for liftoff of group III-nitride films
MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann
Physica Status Solidi A (Applied Research) 159, 1997
Charge state manipulation of qubits in diamond
B Grotz, MV Hauf, M Dankerl, B Naydenov, S Pezzagna, J Meijer, ...
Nature communications 3 (1), 729, 2012
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