Martin Stutzmann

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2018
Позовавания	43738	9566
h-индекс	96	41
i10-индекс	503	203

2300

1150

575

1725

198519861987198819891990199119921993199419951996199719981999200020012002200320042005200620072008200920102011201220132014201520162017201820192020202120222023126 131 278 212 279 205 438 356 598 509 518 483 507 592 597 813 871 889 1184 1182 1286 1368 1363 1625 1543 1666 1879 2059 2206 2018 2040 2101 2017 1946 1786 1725 1601 1384 1122

Публичен достъп

Преглед на всички

91 статии

80 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgПотвърден имейл адрес: inatech.uni-freiburg.de
Martin S. Brandtapl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität MünchenПотвърден имейл адрес: wsi.tum.de
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREAПотвърден имейл адрес: icn2.cat
Martin EickhoffInstitut für Festkörperphysik, Universität BremenПотвърден имейл адрес: ifp.uni-bremen.de
Roman DimitrovFinisarПотвърден имейл адрес: finisar.com
Ian D. SharpWalter Schottky Institut and Physik Department, Technische Universität MünchenПотвърден имейл адрес: wsi.tum.de
Hartmut WiggersUniversity of Duisburg-EssenПотвърден имейл адрес: uni-due.de
James R. ShealyCornell UniversityПотвърден имейл адрес: ece.cornell.edu
Josef Gerhard MüllerMunich University of Applied SciencesПотвърден имейл адрес: hm.edu
WARREN B JACKSONPrincipal ScientistПотвърден имейл адрес: parc.com
Carlos F. O. Graeff (ORCID:0000-0003...Professor Titular do DFM-FC, Universidade Estadual Paulista-UNESPПотвърден имейл адрес: unesp.br
Nils WeimannUniversity of Duisburg-EssenПотвърден имейл адрес: uni-due.de
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der WissenschaftenПотвърден имейл адрес: wmi.badw.de
David BiegelsenXerox Palo Alto Research CenterПотвърден имейл адрес: parc.com
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff UniversityПотвърден имейл адрес: cardiff.ac.uk
Martin AlbrechtLeibniz-Institut für KristallzüchtungПотвърден имейл адрес: ikz-berlin.de
Sebastian GoennenweinProfessor for Solid State Physics, Technische Universität DresdenПотвърден имейл адрес: tu-dresden.de
Manuel CardonaMax Planck InstitutПотвърден имейл адрес: fkf.mpg.de
Felix HoehneWalter-Schottky Institut, TU MünchenПотвърден имейл адрес: wsi.tum.de
Gyorgy CsabaPázmány Péter Catholic University, formerly University of Notre DameПотвърден имейл адрес: itk.ppke.hu

Следене

Martin Stutzmann

Professor (retired) of Experimental Physics, Walter Schottky Institut, TU München

Потвърден имейл адрес: wsi.tum.de - Начална страница

Semiconductor Physics


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999	3545	1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000	2034	2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985	1505	1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1374	2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1032	1992
Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997	779	1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998	646	1998
Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004	621	2004
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 2006	575	2006
The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989	431	1989
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999	414	1999
Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997	414	1997
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	399	1996
Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B 83 (8), 081304, 2011	393	2011
Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998	366	1998
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	354	2003
Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987	349	1987
Electronic properties of semiconducting FeSi₂ films CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ... Journal of applied physics 68 (4), 1726-1734, 1990	300	1990
Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997	285	1997
Charge state manipulation of qubits in diamond B Grotz, MV Hauf, M Dankerl, B Naydenov, S Pezzagna, J Meijer, ... Nature communications 3 (1), 729, 2012	283	2012

Системата не може да изпълни операцията сега. Опитайте отново по-късно.

Статии 1–20

Позовавания годишно

Дублирани описания

Обединени библиографски описания

Добавяне на съавториСъавтори

Следене

Позовавания

Съавтори