| Role of self-heating and polarization in AlGaN/GaN-based heterostructures K Ahmeda, B Ubochi, B Benbakhti, SJ Duffy, A Soltani, WD Zhang, ... IEEE Access 5, 20946-20952, 2017 | 21 | 2017 |
| Operational frequency degradation induced trapping in scaled GaN HEMTs B Ubochi, S Faramehr, K Ahmeda, P Igić, K Kalna Microelectronics Reliability 71, 35-40, 2017 | 13 | 2017 |
| A parametric technique for trap characterization in AlGaN/GaN HEMTs SJ Duffy, B Benbakhti, W Zhang, K Ahmeda, K Kalna, M Boucherta, ... IEEE Transactions on Electron Devices 67 (5), 1924-1930, 2020 | 10 | 2020 |
| Buffer trap related knee walkout and the effects of self-heating in AlGaN/GaN HEMTs B Ubochi, K Ahmeda, K Kalna ECS Journal of Solid State Science and Technology 6 (11), S3005, 2017 | 9 | 2017 |
| The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation K Ahmeda, B Ubochi, MH Alqaysi, A Al-Khalidi, E Wasige, K Kalna Microelectronics Reliability 115, 113965, 2020 | 8 | 2020 |
| Impact of interface traps/defects and self‐heating on the degradation of performance of a 4H‐SiC VDMOSFET MH Alqaysi, A Martinez, K Ahmeda, B Ubochi, K Kalna IET Power Electronics 12 (11), 2731-2740, 2019 | 8 | 2019 |
| Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices K Ahmeda, B Ubochi, K Kalna, B Benbakhti, SJ Duffy, W Zhang, A Soltani 2017 12th European Microwave Integrated Circuits Conference (EuMIC), 37-40, 2017 | 4 | 2017 |
| Acoustical characteristics of proton exchange membrane fuel cells M Al-Rweg, K Ahmeda, A Albarbar IEEE Access 9, 81068-81077, 2021 | 1 | 2021 |
| A source and drain transient currents technique for trap characterisation in AIGaN/GaN HEMTs SJ Duffy, B Benbakhti, W Zhang, K Kalna, K Ahmeda, M Boucherta, ... 2018 13th European Microwave Integrated Circuits Conference (EuMIC), 214-217, 2018 | 1 | 2018 |
| Scaling and traps induced degradation of cutoff frequency in GaN HEMT BC Ubochi, S Faramehr, K Ahmeda, P Igić, K Kalna 2016 11th International Conference on Advanced Semiconductor Devices …, 2016 | 1 | 2016 |
| Analytical Modeling of Depletion-Mode MOSHEMT Device for High-Temperature Applications N Islam, MFP Mohamed, N Ahmad, MM Isa, AF Abd Rahim, K Ahmeda IEEE Access, 2024 | | 2024 |
| Analysis Of The Reliability Of Passivation Layer And Interface Charge On Breakdown Voltage of E-Mode AlGaN/GaN MISHEMTs Device N Islam, MFP Mohamed, FAJ Khan, S Falina, H Kawarada, M Syamsul, ... 2023 IEEE International Symposium on the Physical and Failure Analysis of …, 2023 | | 2023 |
| Influence of temperature and dimension in a 4H-SiC vertical power MOSFET MH Alqaysi, A Martinez, B Ubochi, S Batcup, K Ahmeda Engineering Research Express 2 (4), 045020, 2020 | | 2020 |
| Self-heating and Reliability of GaN HEMTs for Energy Management K Ahmeda Swansea University, 2018 | | 2018 |
| Buffer trapping effects on knee walkout in GaN HEMTs B Ubochi, K Ahmeda, K Kalna 2017 IEEE International Conference on Microwaves, Antennas, Communications …, 2017 | | 2017 |
| A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN Based Devices S Duffy, B Benbakhti, W Zhang, K Kalna, K Ahmeda, H Maher, A Soltani 47th European Solid-State Device Research Conference (ESSDERC), 2017 | | 2017 |
| The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices K Ahmeda, S Faramehr, P Igić, K Kalna, SJ Duffy, A Soltani, B Benbakhti 2016 11th International Conference on Advanced Semiconductor Devices …, 2016 | | 2016 |
| ASDAM 2016, The 11th International Conference on Advanced Semiconductor Devices And Microsystems, November 13-16, 2016, Smolenice, Slovakia R Adam, K Ahmeda, H Al-Nashash, R Andok, J Arbet, O Babchenko, ... | | |
Karol KalnaProfessorПотвърден имейл адрес: swansea.ac.uk
