Следене
Imtiaz Ahmed
Imtiaz Ahmed
Потвърден имейл адрес: purdue.edu - Начална страница
Заглавие
Позовавания
Позовавания
Година
A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor
E Rahman, A Shadman, I Ahmed, SUZ Khan, QDM Khosru
Nanotechnology 29 (23), 235203, 2018
182018
A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applications
N Chowdhury, I Ahmed, T Fakhrul, MK Alam, QDM Khosru
Physica E: Low-dimensional Systems and Nanostructures 74, 251-257, 2015
102015
Gan-on-sic surface acoustic wave devices up to 14.3 Ghz
I Ahmed, U Rawat, JT Chen, D Weinstein
2022 IEEE 35th International Conference on Micro Electro Mechanical Systems …, 2022
52022
Physically based analytical modeling of 2D electrostatic potential for symmetric and asymmetric double gate junctionless field effect transistors in subthreshold region
I Ahmed, QDM Khosru
ECS Transactions 69 (5), 249, 2015
52015
Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform
I Ahmed, U Rawat, JT Chen, D Weinstein
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 70 …, 2022
42022
Switchable transduction in GaN MEMS with off-state shunt
I Ahmed, D Weinstein
2021 IEEE 34th International Conference on Micro Electro Mechanical Systems …, 2021
32021
InxGa1−xSb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current
MH Alam, IA Niaz, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru
2012 IEEE International Conference on Electro/Information Technology, 1-6, 2012
32012
Switchable transducers in GaN MEMS resonators: Performance comparison and analysis
I Ahmed, D Weinstein
Micromachines 12 (4), 461, 2021
22021
Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current
I Ahmed, S Chowdhury, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 72 (2), 189, 2016
12016
Switchable and Tunable MEMS Devices in GaN MMIC Technology
I Ahmed
Purdue University Graduate School, 2023
2023
A Comprehensive Analytical Study of Subthreshold Swing for Cylindrical Gate-All-Around Junctionless Field Effect Transistor
I Ahmed, QDM Khosru
ECS Transactions 72 (2), 109, 2016
2016
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
N Chowdhury, I Ahmed, Z Al Azim, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 58 (16), 9, 2014
2014
Physical/process parameter dependence of gate capacitance and ballistic performance of InAsySb1−yQuantum Well Field Effect Transistors
IA Niaz, MH Alam, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru
2013 IEEE 5th International Nanoelectronics Conference (INEC), 389-392, 2013
2013
Self-Consistent CV Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
I Ahmed, IA Niaz, M Hasibul, N Chowdhury, Z Al Azim, QD Mohd Khosru
Electronics Design, Systems and Applications (ICEDSA), 2012 IEEE …, 2012
2012
Self consistent simulation of CV characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects
Z Al Azim, N Chowdhury, IA Niaz, MH Alam, I Ahmed, DM Quazi
2012 IEEE International Conference on Electronics Design, Systems and …, 2012
2012
A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET.
N Chowdhury, Z Al Azim, I Ahmed, IA Niaz, MH Alam, QDM Khosru
EIT, 1-4, 2012
2012
Системата не може да изпълни операцията сега. Опитайте отново по-късно.
Статии 1–16