Следене
Imtiaz Ahmed
Imtiaz Ahmed
PhD Candidate and Graduate Research Assistant, Purdue University, West Lafayette, Indiana, USA
Потвърден имейл адрес: purdue.edu - Начална страница
Заглавие
Позовавания
Позовавания
Година
A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor
E Rahman, A Shadman, I Ahmed, SUZ Khan, QDM Khosru
Nanotechnology 29 (23), 235203, 2018
112018
A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applications
N Chowdhury, I Ahmed, T Fakhrul, MK Alam, QDM Khosru
Physica E: Low-dimensional Systems and Nanostructures 74, 251-257, 2015
102015
Physically based analytical modeling of 2D electrostatic potential for symmetric and asymmetric double gate junctionless field effect transistors in subthreshold region
I Ahmed, QDM Khosru
ECS Transactions 69 (5), 249, 2015
52015
InxGa1−xSb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current
MH Alam, IA Niaz, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru
2012 IEEE International Conference on Electro/Information Technology, 1-6, 2012
32012
Gan-on-sic surface acoustic wave devices up to 14.3 Ghz
I Ahmed, U Rawat, JT Chen, D Weinstein
2022 IEEE 35th International Conference on Micro Electro Mechanical Systems …, 2022
22022
Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis
I Ahmed, D Weinstein
Micromachines 12 (4), 461, 2021
22021
Switchable transduction in GaN MEMS with off-state shunt
I Ahmed, D Weinstein
2021 IEEE 34th International Conference on Micro Electro Mechanical Systems …, 2021
22021
Performance analysis of InAs/AlSb MOS-HEMT by self-consistent capacitance-voltage characterization and direct tunneling gate leakage current
I Ahmed, S Chowdhury, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 72 (2), 189, 2016
22016
Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform
I Ahmed, U Rawat, JT Chen, D Weinstein
arXiv preprint arXiv:2204.12113, 2022
12022
A Comprehensive Analytical Study of Subthreshold Swing for Cylindrical Gate-All-Around Junctionless Field Effect Transistor
I Ahmed, QDM Khosru
ECS Transactions 72 (2), 109, 2016
2016
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
N Chowdhury, I Ahmed, Z Al Azim, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 58 (16), 9, 2014
2014
Physical/process parameter dependence of gate capacitance and ballistic performance of InAsySb1−yQuantum Well Field Effect Transistors
IA Niaz, MH Alam, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru
2013 IEEE 5th International Nanoelectronics Conference (INEC), 389-392, 2013
2013
Self-Consistent CV Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
I Ahmed, IA Niaz, M Hasibul, N Chowdhury, Z Al Azim, QD Mohd Khosru
Electronics Design, Systems and Applications (ICEDSA), 2012 IEEE …, 2012
2012
Self consistent simulation of CV characterization and ballistic performance of double gate SOI flexible-FET incorporating QM effects
Z Al Azim, N Chowdhury, IA Niaz, MH Alam, I Ahmed, DM Quazi
2012 IEEE International Conference on Electronics Design, Systems and …, 2012
2012
A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET
N Chowdhury, Z Al Azim, I Ahmed, IA Niaz, MH Alam, QDM Khosru
2012 IEEE International Conference on Electro/Information Technology, 1-4, 2012
2012
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