N-polar GaN epitaxy and high electron mobility transistors Man Hoi Wong, Stacia Keller, Nidhi, Sansaptak Dasgupta, Daniel J Denninghoff ...
Semiconductor Science and Technology 28 (7), 074009, 2013
237 2013 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact … HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019
175 2019 Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth S Dasgupta, N Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra
Applied physics letters 96 (14), 2010
159 2010 Trench confined epitaxially grown device layer (s) R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ...
US Patent 8,765,563, 2014
105 2014 AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit A Raman, S Dasgupta, S Rajan, JS Speck, UK Mishra
Japanese Journal of Applied Physics 47 (5R), 3359, 2008
91 2008 Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck
Applied physics express 4 (2), 024101, 2011
88 2011 Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High DJ Denninghoff, S Dasgupta, J Lu, S Keller, UK Mishra
IEEE electron device letters 33 (6), 785-787, 2012
79 2012 Growth of high quality N-polar AlN (0001) on Si (111) by plasma assisted molecular beam epitaxy S Dasgupta, F Wu, JS Speck, UK Mishra
Applied Physics Letters 94 (15), 2009
76 2009 Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ...
IEEE Electron Device Letters 32 (2), 137-139, 2010
66 2010 Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 28.3.1 - 28.3.4, 2013
57 * 2013 Nonplanar III-N transistors with compositionally graded semiconductor channels HW Then, S Dasgupta, M Radosavljevic, B Chu-Kung, SH Sung, ...
US Patent 8,896,101, 2014
51 2014 Epitaxial buffer layers for group III-N transistors on silicon substrates S Dasgupta, HW Then, N Mukherjee, M Radosavljevic, RS Chau
US Patent 9,583,574, 2017
47 2017 III-N devices in Si trenches S Dasgupta, HW Then, SK Gardner, SH Sung, M Radosavljevic, ...
US Patent 9,640,422, 2017
38 2017 High breakdown voltage III-N depletion mode MOS capacitors HW Then, S Dasgupta, G Schrom, VR Rao, RS Chau
US Patent 9,064,709, 2015
38 2015 Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm S Dasgupta, J Lu, JS Speck, UK Mishra
IEEE Electron Device Letters 33 (6), 794-796, 2012
36 2012 Growth, structural, and electrical characterizations of N-Polar InAlN by plasma-assisted molecular beam epitaxy S Dasgupta, N Choi, F Wu, JS Speck, UK Mishra
Applied physics express 4 (4), 045502, 2011
34 2011 Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With S Dasgupta, J Lu, JS Speck, UK Mishra
IEEE electron device letters 33 (7), 961-963, 2012
32 2012 Experimental demonstration of III-nitride hot-electron transistor with GaN base S Dasgupta, A Raman, JS Speck, UK Mishra
IEEE electron device letters 32 (9), 1212-1214, 2011
30 2011 Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performance HW Then, S Dasgupta, M Radosavljevic
US Patent 10,720,505, 2020
27 2020 Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack S Dasgupta, HW Then, M Radosavljevic, SK Gardner, SH Sung, ...
US Patent 9,660,064, 2017
27 2017 