Следене
Pezoldt
Pezoldt
Потвърден имейл адрес: tu-ilmenau.de
Заглавие
Позовавания
Позовавания
Година
Two-dimensional materials and their prospects in transistor electronics
F Schwierz, J Pezoldt, R Granzner
Nanoscale 7 (18), 8261-8283, 2015
7532015
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla, J Pezoldt, O Ambacher
Journal of Physics D: Applied Physics 40 (20), S19, 2007
4772007
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide
CY Wang, Y Dai, J Pezoldt, B Lu, T Kups, V Cimalla, O Ambacher
Crystal growth and Design 8 (4), 1257-1260, 2008
1552008
Nanoelectromechanical devices for sensing applications
V Cimalla, F Niebelschütz, K Tonisch, C Foerster, K Brueckner, I Cimalla, ...
Sensors and Actuators B: Chemical 126 (1), 24-34, 2007
1472007
Phase selective growth and properties of rhombohedral and cubic indium oxide
CY Wang, V Cimalla, H Romanus, T Kups, G Ecke, T Stauden, M Ali, ...
Applied physics letters 89 (1), 2006
1282006
Growth of cubic InN on -plane sapphire
V Cimalla, J Pezoldt, G Ecke, R Kosiba, O Ambacher, L Spieß, G Teichert, ...
Applied physics letters 83 (17), 3468-3470, 2003
1082003
Integrated multilayer stretchable printed circuit boards paving the way for deformable active matrix
S Biswas, A Schoeberl, Y Hao, J Reiprich, T Stauden, J Pezoldt, ...
Nature Communications 10 (1), 4909, 2019
852019
Densification of thin aluminum oxide films by thermal treatments
V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ...
Materials Sciences and Applications 5 (08), 628, 2014
822014
Nanomechanics of single crystalline tungsten nanowires
V Cimalla, CC Röhlig, J von Pezoldt, M Niebelschütz, O Ambacher, ...
J. Nanomater. 2008, 638947-638956, 2008
692008
Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing
V Cimalla, KV Karagodina, J Pezoldt, G Eichhorn
Materials Science and Engineering: B 29 (1-3), 170-175, 1995
671995
High-frequency performance of GaN high-electron mobility transistors on 3C-SiC/Si substrates with Au-free ohmic contacts
W Jatal, U Baumann, K Tonisch, F Schwierz, J Pezoldt
IEEE Electron device letters 36 (2), 123-125, 2014
662014
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ...
Journal of applied physics 100 (9), 2006
662006
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
H Romanus, V Cimalla, JA Schaefer, L Spieß, G Ecke, J Pezoldt
Thin Solid Films 359 (2), 146-149, 2000
642000
Micro‐and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications
K Brueckner, F Niebelschuetz, K Tonisch, C Foerster, V Cimalla, ...
physica status solidi (a) 208 (2), 357-376, 2011
562011
Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates
DJ As, T Frey, D Schikora, K Lischka, V Cimalla, J Pezoldt, R Goldhahn, ...
Applied Physics Letters 76 (13), 1686-1688, 2000
552000
Graphene nanoribbons for electronic devices
Z Geng, B Hähnlein, R Granzner, M Auge, AA Lebedev, VY Davydov, ...
Annalen der Physik 529 (11), 1700033, 2017
542017
Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films
R Grieseler, B Hähnlein, M Stubenrauch, T Kups, M Wilke, M Hopfeld, ...
Applied Surface Science 292, 997-1001, 2014
502014
Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces
J Pezoldt, C Förster, P Weih, P Masri
Applied surface science 184 (1-4), 79-83, 2001
502001
The estimation of sputtering yields for SiC and Si
G Ecke, R Kosiba, V Kharlamov, Y Trushin, J Pezoldt
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
492002
Sputtering effects in hexagonal silicon carbide
J Pezoldt, B Stottko, G Kupris, G Ecke
Materials Science and Engineering: B 29 (1-3), 94-98, 1995
481995
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Статии 1–20