A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
2642 2018 GaN: Processing, defects, and devices SJ Pearton, JC Zolper, RJ Shul, F Ren
Journal of applied physics 86 (1), 1-78, 1999
2345 1999 Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
1223 2003 Hydrogen-selective sensing at room temperature with ZnO nanorods HT Wang, BS Kang, F Ren, LC Tien, PW Sadik, DP Norton, SJ Pearton, ...
Applied Physics Letters 86 (24), 2005
721 2005 Fabrication and performance of GaN electronic devices SJ Pearton, F Ren, AP Zhang, KP Lee
Materials Science and Engineering: R: Reports 30 (3-6), 55-212, 2000
660 2000 Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 2018
609 2018 ZnO nanowire growth and devices YW Heo, DP Norton, LC Tien, Y Kwon, BS Kang, F Ren, SJ Pearton, ...
Materials Science and Engineering: R: Reports 47 (1-2), 1-47, 2004
581 2004 Site-specific growth of ZnO nanorods using catalysis-driven molecular-beam epitaxy YW Heo, V Varadarajan, M Kaufman, K Kim, DP Norton, F Ren, ...
Applied physics letters 81 (16), 3046-3048, 2002
500 2002 Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
488 2017 GaN-based diodes and transistors for chemical, gas, biological and pressure sensing SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
448 2004 Magnetic properties of n -GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
448 2002 Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
375 2015 Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ...
Applied Physics Letters 87 (22), 2005
356 2005 A survey of ohmic contacts to III-V compound semiconductors AG Baca, F Ren, JC Zolper, RD Briggs, SJ Pearton
Thin solid films 308, 599-606, 1997
340 1997 Depletion-mode ZnO nanowire field-effect transistor YW Heo, LC Tien, Y Kwon, DP Norton, SJ Pearton, BS Kang, F Ren
Applied Physics Letters 85 (12), 2274-2276, 2004
338 2004 Recent advances in wide bandgap semiconductor biological and gas sensors SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
331 2010 GaN electronics SJ Pearton, F Ren
Advanced Materials 12 (21), 1571-1580, 2000
294 2000 Effect of temperature on F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
284 1998 Enantioselective arylative dearomatization of indoles via Pd-catalyzed intramolecular reductive Heck reactions C Shen, RR Liu, RJ Fan, YL Li, TF Xu, JR Gao, YX Jia
Journal of the American Chemical Society 137 (15), 4936-4939, 2015
264 2015 Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik
Applied Physics Letters 55 (17), 1750-1752, 1989
263 1989 
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaПотвърден имейл адрес: mse.ufl.edu
