Следене
Fan Ren
Fan Ren
University of Florida, Bell Lab, AT&T
Потвърден имейл адрес: che.ufl.edu - Начална страница
Заглавие
Позовавания
Позовавания
Година
GaN: Processing, defects, and devices
SJ Pearton, JC Zolper, RJ Shul, F Ren
Journal of applied physics 86 (1), 1-78, 1999
22811999
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
20652018
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
12022003
ZnO nanowire growth and devices
YW Heo, DP Norton, LC Tien, Y Kwon, BS Kang, F Ren, SJ Pearton, ...
Materials Science and Engineering: R: Reports 47 (1-2), 1-47, 2004
7572004
The Mg-chelatase H subunit is an abscisic acid receptor
YY Shen, XF Wang, FQ Wu, SY Du, Z Cao, Y Shang, XL Wang, CC Peng, ...
Nature 443 (7113), 823-826, 2006
7182006
Hydrogen-selective sensing at room temperature with ZnO nanorods
HT Wang, BS Kang, F Ren, LC Tien, PW Sadik, DP Norton, SJ Pearton, ...
Applied Physics Letters 86 (24), 2005
6962005
Two Calcium-Dependent Protein Kinases, CPK4 and CPK11, Regulate Abscisic Acid Signal Transduction in Arabidopsis
SY Zhu, XC Yu, XJ Wang, R Zhao, Y Li, RC Fan, Y Shang, SY Du, ...
The Plant Cell 19 (10), 3019-3036, 2007
6582007
Fabrication and performance of GaN electronic devices
SJ Pearton, F Ren, AP Zhang, KP Lee
Materials Science and Engineering: R: Reports 30 (3-6), 55-212, 2000
6382000
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 2018
4892018
Site-specific growth of ZnO nanorods using catalysis-driven molecular-beam epitaxy
YW Heo, V Varadarajan, M Kaufman, K Kim, DP Norton, F Ren, ...
Applied physics letters 81 (16), 3046-3048, 2002
4872002
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
4522002
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
4332004
Perspective—opportunities and future directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
4172017
A shift of phloem unloading from symplasmic to apoplasmic pathway is involved in developmental onset of ripening in grape berry
XY Zhang, XL Wang, XF Wang, GH Xia, QH Pan, RC Fan, FQ Wu, XC Yu, ...
Plant physiology 142 (1), 220-232, 2006
3752006
Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods
LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ...
Applied Physics Letters 87 (22), 2005
3492005
Depletion-mode ZnO nanowire field-effect transistor
YW Heo, LC Tien, Y Kwon, DP Norton, SJ Pearton, BS Kang, F Ren
Applied Physics Letters 85 (12), 2274-2276, 2004
3332004
A survey of ohmic contacts to III-V compound semiconductors
AG Baca, F Ren, JC Zolper, RD Briggs, SJ Pearton
Thin solid films 308, 599-606, 1997
3191997
Recent advances in wide bandgap semiconductor biological and gas sensors
SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
3182010
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
3112015
Effect of temperature on metal–oxide–semiconductor field-effect transistors
F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
2871998
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Статии 1–20