Electrical charge state identification and control for the silicon vacancy in 4H-SiC ME Bathen, A Galeckas, J Müting, HM Ayedh, U Grossner, J Coutinho, ...
npj Quantum Information 5 (1), 111, 2019
63 2019 Conversion pathways of primary defects by annealing in proton-irradiated R Karsthof, ME Bathen, A Galeckas, L Vines
Physical Review B 102 (18), 184111, 2020
48 2020 Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents J Linder, ME Bathen
Physical Review B 93 (22), 224509, 2016
43 2016 Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide ME Bathen, L Vines
Advanced Quantum Technologies 4 (7), 2100003, 2021
37 2021 Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment ME Bathen, J Coutinho, HM Ayedh, JU Hassan, I Farkas, S Öberg, ...
Physical Review B 100 (1), 014103, 2019
27 2019 Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling ME Bathen, J Linder
Scientific Reports 7 (1), 41409, 2017
21 2017 Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals VM Reinertsen, PM Weiser, YK Frodason, ME Bathen, L Vines, ...
Applied Physics Letters 117 (23), 2020
20 2020 Characterization methods for defects and devices in silicon carbide ME Bathen, CTK Lew, J Woerle, C Dorfer, U Grossner, S Castelletto, ...
Journal of Applied Physics 131 (14), 2022
18 2022 Strain modulation of Si vacancy emission from SiC micro-and nanoparticles GC Vasquez, ME Bathen, A Galeckas, C Bazioti, KM Johansen, ...
Nano letters 20 (12), 8689-8695, 2020
14 2020 Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC ME Bathen, A Galeckas, J Coutinho, L Vines
Journal of Applied Physics 127 (8), 2020
14 2020 Muon Interaction with Negative- J Woerle, ME Bathen, T Prokscha, A Galeckas, HM Ayedh, L Vines, ...
Physical Review Applied 14 (5), 054053, 2020
13 2020 Investigation of electrically active defects in SiC power diodes caused by heavy ion irradiation N Für, M Belanche, C Martinella, P Kumar, ME Bathen, U Grossner
IEEE Transactions on Nuclear Science, 2023
9 2023 Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC R Karsthof, M Etzelmüller Bathen, A Kuznetsov, L Vines
Journal of Applied Physics 131 (3), 2022
9 2022 npj Quantum Inf. 5, 111 (2019) ME Bathen, A Galeckas, J Müting, HM Ayedh, U Grossner, J Coutinho, ...
8 First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC ME Bathen, L Vines, J Coutinho
Journal of Physics: Condensed Matter 33 (7), 075502, 2020
7 2020 The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers M Ghezellou, P Kumar, ME Bathen, R Karsthof, EÖ Sveinbjörnsson, ...
APL Materials 11 (3), 2023
5 2023 Predicting solid state material platforms for quantum technologies OL Hebnes, ME Bathen, ØS Schøyen, SG Winther-Larsen, L Vines, ...
npj Computational Materials 8 (1), 207, 2022
5 2022 Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС BGS Marianne E. Bathen, Hussein M. Ayedh, Lasse Vines, Ildiko Farkas, Erik ...
Materials Science Forum 924, 200-203, 2018
5 2018 Heavy-ion-induced defects in degraded SiC power MOSFETs C Martinella, ME Bathen, A Javanainen, U Grossner
Materials Science Forum 1090, 179-184, 2023
4 2023 Diamond (111) surface reconstruction and epitaxial graphene interface BP Reed, ME Bathen, JWR Ash, CJ Meara, AA Zakharov, JP Goss, ...
Physical Review B 105 (20), 205304, 2022
3 2022 