High-stability Er/sup 3+/-doped superfluorescent fiber sources DC Hall, WK Burns, RP Moeller
Journal of lightwave technology 13 (7), 1452-1460, 1995
162 1995 High-power disorder-defined coupled stripe Al/sub/ital y//Ga/sub 1/minus///sub/ital y//As-GaAs-In/sub/ital x//Ga/sub 1/minus///sub/ital x//As quantum well heterostructure lasers DC Hall, LJ Guido, P Gavrilovic, K Meehan, JE Williams, W Stutius
Appl. Phys. Lett.;(United States) 55 (3), 1989
159 1989 Reduced temperature sensitivity Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers with (Si/sub 2/)/sub x/(GaAs)/sub 1-x/''barriers'' GS Jackson, DG Deppe, KC Hsieh, DC Hall, RD Burnham, RL Thornton, ...
Appl. Phys. Lett.;(United States) 48 (17), 1986
122 1986 High-power, near-diffraction-limited large-area traveling-wave semiconductor amplifiers L Goldberg, D Mehuys, MR Surette, DC Hall
IEEE journal of quantum electronics 29 (6), 2028-2043, 1993
112 1993 Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe DC Hall, L Goldberg, D Mehuys
Applied physics letters 61 (4), 384-386, 1992
110 1992 GaAs MOSFET using InAlP native oxide as gate dielectric X Li, Y Cao, DC Hall, P Fay, B Han, A Wibowo, N Pan
IEEE Electron Device Letters 25 (12), 772-774, 2004
64 2004 3.3 W CW diffraction limited broad area semiconductor amplifier L Goldberg, D Mehuys, DC Hall
Electronics Letters 12 (28), 1082-1084, 1992
58 1992 Wavelength stability optimization in Er (3+)-doped superfluorescent fibre sources DC Hall, WK Burns
Electronics letters 30 (8), 653-654, 1994
50 1994 Carbon‐doped Alx 1−x As‐GaAs quantum well lasers LJ Guido, GS Jackson, DC Hall, WE Plano, N Holonyak Jr
Applied physics letters 52 (7), 522-524, 1988
50 1988 Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy KA Wang, Y Cao, J Simon, J Zhang, A Mintairov, J Merz, D Hall, T Kosel, ...
Applied physics letters 89 (16), 2006
42 2006 Nonselective wet oxidation of AlGaAs heterostructure waveguides through controlled addition of oxygen Y Luo, DC Hall
IEEE Journal of Selected Topics in Quantum Electronics 11 (6), 1284-1291, 2005
42 2005 Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications Y Cao, J Zhang, X Li, TH Kosel, P Fay, DC Hall, XB Zhang, RD Dupuis, ...
Applied Physics Letters 86 (6), 2005
40 2005 Room-temperature 1.5 μm photoluminescence of L Kou, DC Hall, H Wu
Applied physics letters 72 (26), 3411-3413, 1998
38 1998 High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation GS Jackson, DC Hall, LJ Guido, WE Plano, N Pan, N Holonyak Jr, ...
Applied physics letters 52 (9), 691-693, 1988
37 1988 Ultra-high-stability two-stage superfluorescent fibre sources for fibre optic gyroscopes PZ Zatta, DC Hall
Electronics letters 38 (9), 1, 2002
36 2002 Native‐oxide‐defined coupled‐stripe Alx 1−x As‐GaAs quantum well heterostructure lasers JM Dallesasse, N Holonyak Jr, DC Hall, N El‐Zein, AR Sugg, SC Smith, ...
Applied physics letters 58 (8), 834-836, 1991
35 1991 Effects of microcracking on Alx 1−x As‐GaAs quantum well lasers grown on Si DG Deppe, DC Hall, N Holonyak Jr, RJ Matyi, H Shichijo, JE Epler
Applied physics letters 53 (10), 874-876, 1988
34 1988 Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric Y Cao, X Li, J Zhang, P Fay, TH Kosel, DC Hall
IEEE Electron Device Letters 27 (5), 317-319, 2006
32 2006 Oxidized Y Luo, DC Hall, L Kou, L Steingart, JH Jackson, O Blum, H Hou
Applied physics letters 75 (20), 3078-3080, 1999
32 1999 High‐power disorder‐defined coupled stripe Aly 1 − y x 1 − x JS Major Jr, DC Hall, LJ Guido, N Holonyak Jr, P Gavrilovic, K Meehan, ...
Applied physics letters 55 (3), 271-273, 1989
31 1989 