| Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ... Journal of Applied Physics 105 (4), 2009 | 92 | 2009 |
| Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil G Calabrese, P Corfdir, G Gao, C Pfüller, A Trampert, O Brandt, ... Applied Physics Letters 108 (20), 2016 | 89 | 2016 |
| Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ... Journal of Applied Physics 105 (1), 2009 | 83 | 2009 |
| p-type doping of GaN nanowires characterized by photoelectrochemical measurements J Kamimura, P Bogdanoff, M Ramsteiner, P Corfdir, F Feix, L Geelhaar, ... Nano Letters 17 (3), 1529-1537, 2017 | 78 | 2017 |
| Molecular beam epitaxy of GaN nanowires on epitaxial graphene S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ... Nano letters 17 (9), 5213-5221, 2017 | 75 | 2017 |
| Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires AM Graham, P Corfdir, M Heiss, S Conesa-Boj, E Uccelli, AF i Morral, ... Physical Review B 87 (12), 125304, 2013 | 67 | 2013 |
| Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN P Corfdir, J Ristić, P Lefebvre, T Zhu, D Martin, A Dussaigne, JD Ganière, ... Applied Physics Letters 94 (20), 2009 | 61 | 2009 |
| Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ... Physical Review B 90 (19), 195309, 2014 | 57 | 2014 |
| Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ... Nano letters 16 (2), 973-980, 2016 | 47 | 2016 |
| Origin of the nonradiative decay of bound excitons in GaN nanowires C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ... Physical Review B 90 (16), 165304, 2014 | 44 | 2014 |
| Nanowires bending over backward from strain partitioning in asymmetric core–shell heterostructures RB Lewis, P Corfdir, H Küpers, T Flissikowski, O Brandt, L Geelhaar Nano letters 18 (4), 2343-2350, 2018 | 41 | 2018 |
| Electron localization by a donor in the vicinity of a basal stacking fault in GaN P Corfdir, P Lefebvre, J Ristić, JD Ganière, B Deveaud-Plédran Physical Review B 80 (15), 153309, 2009 | 41 | 2009 |
| Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal-phase quantum disks in GaAs nanowires P Corfdir, B Van Hattem, E Uccelli, S Conesa-Boj, P Lefebvre, ... Nano letters 13 (11), 5303-5310, 2013 | 40 | 2013 |
| High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ... Crystal Growth & Design 15 (8), 4104-4109, 2015 | 39 | 2015 |
| Exciton recombination dynamics in a-plane (Al, Ga) N/GaN quantum wells probed by picosecond photo and cathodoluminescence P Corfdir, P Lefebvre, L Balet, S Sonderegger, A Dussaigne, T Zhu, ... Journal of Applied Physics 107 (4), 2010 | 39 | 2010 |
| Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire A Senichev, P Corfdir, O Brandt, M Ramsteiner, S Breuer, J Schilling, ... Nano Research 11, 4708-4721, 2018 | 37 | 2018 |
| Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN P Corfdir, P Lefebvre Journal of Applied Physics 112 (5), 2012 | 37 | 2012 |
| Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures P Corfdir, J Levrat, A Dussaigne, P Lefebvre, H Teisseyre, I Grzegory, ... Physical Review B 83 (24), 245326, 2011 | 36 | 2011 |
| Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ... Physical Review B 90 (20), 205301, 2014 | 35 | 2014 |
| Exciton footprint of self-assembled AlGaAs quantum dots in core-shell nanowires Y Fontana, P Corfdir, B Van Hattem, E Russo-Averchi, M Heiss, ... Physical Review B 90, 075307, 2014 | 32 | 2014 |
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
