| Size-dependent reactivity of diamond nanoparticles OA Williams, J Hees, C Dieker, W Jäger, L Kirste, CE Nebel ACS nano 4 (8), 4824-4830, 2010 | 266 | 2010 |
| GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ... IEEE Electron Device Letters 31 (7), 671-673, 2010 | 52 | 2010 |
| Densification of thin aluminum oxide films by thermal treatments V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ... Materials Sciences and Applications 5 (08), 628, 2014 | 47 | 2014 |
| Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering RE Sah, L Kirste, M Baeumler, P Hiesinger, V Cimalla, V Lebedev, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (3 …, 2010 | 45 | 2010 |
| Near infrared absorption and room temperature photovoltaic response in superlattices grown by metal-organic vapor-phase epitaxy E Baumann, FR Giorgetta, D Hofstetter, S Golka, W Schrenk, G Strasser, ... Applied physics letters 89 (4), 041106, 2006 | 45 | 2006 |
| X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method N Herres, L Kirste, H Obloh, K Köhler, J Wagner, P Koidl Materials Science and Engineering: B 91, 425-432, 2002 | 44 | 2002 |
| Analysis of the mosaic structure of an ordered (Al, Ga) N layer L Kirste, KM Pavlov, ST Mudie, VI Punegov, N Herres Journal of applied crystallography 38 (1), 183-192, 2005 | 43 | 2005 |
| Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ... Journal of Applied Physics 106 (2), 023535, 2009 | 41 | 2009 |
| Structure and thermoelectric properties of nanocomposite bismuth telluride prepared by melt spinning or by partially alloying with IV–VI compounds DG Ebling, A Jacquot, M Jägle, H Böttner, U Kühn, L Kirste physica status solidi (RRL)–Rapid Research Letters 1 (6), 238-240, 2007 | 40 | 2007 |
| Chemically ordered alloys: Spontaneous formation of natural quantum wells M Albrecht, L Lymperakis, J Neugebauer, JE Northrup, L Kirste, M Leroux, ... Physical Review B 71 (3), 035314, 2005 | 40 | 2005 |
| Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1−xN K Köhler, R Gutt, J Wiegert, L Kirste Journal of Applied Physics 113 (7), 073514, 2013 | 39 | 2013 |
| Influence of the surface potential on electrical properties of heterostructures with different Al-content: Effect of growth method K Köhler, S Müller, R Aidam, P Waltereit, W Pletschen, L Kirste, ... Journal of Applied Physics 107 (5), 053711, 2010 | 38 | 2010 |
| AlGaN/GaN epitaxy and technology P Waltereit, W Bronner, R Quay, M Dammann, R Kiefer, W Pletschen, ... International journal of microwave and wireless technologies 2 (1), 3-11, 2010 | 38 | 2010 |
| Tunneling effects and intersubband absorption in AlN/GaN superlattices E Baumann, FR Giorgetta, D Hofstetter, H Wu, WJ Schaff, LF Eastman, ... Applied Physics Letters 86 (3), 032110, 2005 | 38 | 2005 |
| Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors T Lim, R Aidam, L Kirste, P Waltereit, R Quay, S Müller, O Ambacher Applied Physics Letters 96 (25), 252108, 2010 | 36 | 2010 |
| quantum-cascade lasers operating up to Q Yang, C Manz, W Bronner, C Mann, L Kirste, K Köhler, J Wagner Applied Physics Letters 86 (13), 131107, 2005 | 36 | 2005 |
| Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study J Bläsing, A Krost, J Hertkorn, F Scholz, L Kirste, A Chuvilin, U Kaiser Journal of Applied Physics 105 (3), 033504, 2009 | 34 | 2009 |
| Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN JM Mánuel, FM Morales, JG Lozano, D González, R García, T Lim, ... Acta Materialia 58 (12), 4120-4125, 2010 | 32 | 2010 |
| Growth and doping of semipolar GaN grown on patterned sapphire substrates F Scholz, T Meisch, M Caliebe, S Schörner, K Thonke, L Kirste, S Bauer, ... Journal of Crystal Growth 405, 97-101, 2014 | 31 | 2014 |
| Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ... CrystEngComm 18 (19), 3488-3497, 2016 | 30 | 2016 |
