Lutz Kirste
Lutz Kirste
wiss. Angestellter
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TitleCited byYear
Size-dependent reactivity of diamond nanoparticles
OA Williams, J Hees, C Dieker, W Jäger, L Kirste, CE Nebel
ACS nano 4 (8), 4824-4830, 2010
GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ...
IEEE Electron Device Letters 31 (7), 671-673, 2010
Densification of thin aluminum oxide films by thermal treatments
V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ...
Materials Sciences and Applications 5 (08), 628, 2014
Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering
RE Sah, L Kirste, M Baeumler, P Hiesinger, V Cimalla, V Lebedev, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (3 …, 2010
Near infrared absorption and room temperature photovoltaic response in superlattices grown by metal-organic vapor-phase epitaxy
E Baumann, FR Giorgetta, D Hofstetter, S Golka, W Schrenk, G Strasser, ...
Applied physics letters 89 (4), 041106, 2006
X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method
N Herres, L Kirste, H Obloh, K Köhler, J Wagner, P Koidl
Materials Science and Engineering: B 91, 425-432, 2002
Analysis of the mosaic structure of an ordered (Al, Ga) N layer
L Kirste, KM Pavlov, ST Mudie, VI Punegov, N Herres
Journal of applied crystallography 38 (1), 183-192, 2005
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ...
Journal of Applied Physics 106 (2), 023535, 2009
Structure and thermoelectric properties of nanocomposite bismuth telluride prepared by melt spinning or by partially alloying with IV–VI compounds
DG Ebling, A Jacquot, M Jägle, H Böttner, U Kühn, L Kirste
physica status solidi (RRL)–Rapid Research Letters 1 (6), 238-240, 2007
Chemically ordered alloys: Spontaneous formation of natural quantum wells
M Albrecht, L Lymperakis, J Neugebauer, JE Northrup, L Kirste, M Leroux, ...
Physical Review B 71 (3), 035314, 2005
Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1−xN
K Köhler, R Gutt, J Wiegert, L Kirste
Journal of Applied Physics 113 (7), 073514, 2013
Influence of the surface potential on electrical properties of heterostructures with different Al-content: Effect of growth method
K Köhler, S Müller, R Aidam, P Waltereit, W Pletschen, L Kirste, ...
Journal of Applied Physics 107 (5), 053711, 2010
AlGaN/GaN epitaxy and technology
P Waltereit, W Bronner, R Quay, M Dammann, R Kiefer, W Pletschen, ...
International journal of microwave and wireless technologies 2 (1), 3-11, 2010
Tunneling effects and intersubband absorption in AlN/GaN superlattices
E Baumann, FR Giorgetta, D Hofstetter, H Wu, WJ Schaff, LF Eastman, ...
Applied Physics Letters 86 (3), 032110, 2005
Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
T Lim, R Aidam, L Kirste, P Waltereit, R Quay, S Müller, O Ambacher
Applied Physics Letters 96 (25), 252108, 2010
quantum-cascade lasers operating up to
Q Yang, C Manz, W Bronner, C Mann, L Kirste, K Köhler, J Wagner
Applied Physics Letters 86 (13), 131107, 2005
Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
J Bläsing, A Krost, J Hertkorn, F Scholz, L Kirste, A Chuvilin, U Kaiser
Journal of Applied Physics 105 (3), 033504, 2009
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
JM Mánuel, FM Morales, JG Lozano, D González, R García, T Lim, ...
Acta Materialia 58 (12), 4120-4125, 2010
Growth and doping of semipolar GaN grown on patterned sapphire substrates
F Scholz, T Meisch, M Caliebe, S Schörner, K Thonke, L Kirste, S Bauer, ...
Journal of Crystal Growth 405, 97-101, 2014
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ...
CrystEngComm 18 (19), 3488-3497, 2016
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