Raman spectra of size-selected silicon clusters and comparison with calculated structures EC Honea, A Ogura, CA Murray, K Raghavachari, WO Sprenger, ...
Nature 366 (6450), 42-44, 1993
495 1993 Semiconductor device A Ogura, K Egami
US Patent 4,643,950, 1987
239 1987 UV-Raman spectroscopy system for local and global strain measurements in Si A Ogura, K Yamasaki, D Kosemura, S Tanaka, I Chiba, R Shimidzu
Japanese journal of applied physics 45 (4S), 3007, 2006
118 2006 Structures and coalescence behavior of size-selected silicon nanoclusters studied by surface-plasmon-polariton enhanced Raman spectroscopy EC Honea, A Ogura, DR Peale, C Felix, CA Murray, K Raghavachari, ...
The Journal of chemical physics 110 (24), 12161-12172, 1999
110 1999 Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs T Ohashi, K Suda, S Ishihara, N Sawamoto, S Yamaguchi, K Matsuura, ...
Japanese Journal of Applied Physics 54 (4S), 04DN08, 2015
102 2015 Sub-10-nm planar-bulk-CMOS devices using lateral junction control H Wakabayashi, S Yamagami, N Ikezawa, A Ogura, M Narihiro, KI Arai, ...
IEEE International Electron Devices Meeting 2003, 20.7. 1-20.7. 3, 2003
102 2003 Gas source silicon molecular beam epitaxy using silane H Hirayama, T Tatsumi, A Ogura, N Aizaki
Applied physics letters 51 (26), 2213-2215, 1987
101 1987 Improvement in ferroelectricity of HfxZr1− xO2 thin films using ZrO2 seed layer T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Chikyow, A Ogura
Applied Physics Express 10 (8), 081501, 2017
81 2017 Silicon-on-insulator (SOI) substrate and method of fabricating the same A Ogura
US Patent 6,211,041, 2001
81 2001 Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon R Koh, A Ogura
US Patent 5,427,976, 1995
77 1995 Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura
Microelectronic Engineering 215, 111013, 2019
73 2019 Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same K Takeuchi, K Terashima, H Wakabayashi, S Yamagami, A Ogura, ...
US Patent 7,612,416, 2009
70 2009 HfO2 growth by low-pressure chemical vapor deposition using the Hf (N (C2H5) 2) 4/O2 gas system Y Ohshita, A Ogura, A Hoshino, S Hiiro, H Machida
Journal of crystal growth 233 (1-2), 292-297, 2001
70 2001 Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods A Ogura
US Patent 7,605,443, 2009
67 2009 Semiconductor device and method for manufacturing the same R Koh, S Yamagami, J Lee, H Wakabayashi, Y Saito, A Ogura, M Narihiro, ...
US Patent App. 10/668,349, 2004
63 2004 Skeletal muscle loss is an independent negative prognostic factor in patients with advanced lower rectal cancer treated with neoadjuvant chemoradiotherapy Y Takeda, T Akiyoshi, K Matsueda, H Fukuoka, A Ogura, H Miki, Y Hiyoshi, ...
PloS one 13 (4), e0195406, 2018
62 2018 Characterization of structures by micro-Raman imaging S Nakashima, T Yamamoto, A Ogura, K Uejima, T Yamamoto
Applied physics letters 84 (14), 2533-2535, 2004
59 2004 Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition Y Ohshita, A Ogura, A Hoshino, S Hiiro, T Suzuki, H Machida
Thin Solid Films 406 (1-2), 215-218, 2002
59 2002 Semiconductor device having fin-type effect transistor K Takeuchi, K Watanabe, K Terashima, A Ogura, T Tatsumi, K Takeda, ...
US Patent App. 10/569,451, 2007
58 2007 Semiconductor device and manufacturing process therefor K Terashima, K Takeuchi, S Yamagami, H Wakabayashi, A Ogura, ...
US Patent App. 10/576,412, 2007
58 2007