| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1162 | 2018 |
| Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans Physical Review B 42 (6), 3578, 1990 | 383 | 1990 |
| Non-polar and semi-polar GaN substrates, devices, and methods for making them AD Hanser, EA Preble, L Liu, TL Clites, KR Evans US Patent 7,727,874, 2010 | 323 | 2010 |
| GaN substrates for III-nitride devices T Paskova, DA Hanser, KR Evans Proceedings of the IEEE 98 (7), 1324-1338, 2009 | 221 | 2009 |
| AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio CI Huang, MJ Paulus, CA Bozada, SC Dudley, KR Evans, CE Stutz, ... Applied physics letters 51 (2), 121-123, 1987 | 169 | 1987 |
| Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an EL2-like defect MO Manasreh, DC Look, KR Evans, CE Stutz Physical Review B 41 (14), 10272, 1990 | 164 | 1990 |
| Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy F Hamdani, A Botchkarev, W Kim, H Morkoç, M Yeadon, JM Gibson, ... Applied physics letters 70 (4), 467-469, 1997 | 152 | 1997 |
| GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ... Applied physics letters 89 (1), 2006 | 141 | 2006 |
| GaN substrates—Progress, status, and prospects T Paskova, KR Evans IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1041-1052, 2009 | 133 | 2009 |
| InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ... Applied Physics Letters 97 (3), 2010 | 117 | 2010 |
| Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films JH Leach, K Udwary, J Rumsey, G Dodson, H Splawn, KR Evans APL Materials 7 (2), 2019 | 108 | 2019 |
| Sb-surface segregation and the control of compositional abruptness at the GaAsSbGaAs interface R Kaspi, KR Evans Journal of Crystal Growth 175, 838-843, 1997 | 101 | 1997 |
| Improved compositional abruptness at the InGaAs on GaAs interface by presaturation with In during molecular‐beam epitaxy R Kaspi, KR Evans Applied physics letters 67 (6), 819-821, 1995 | 99 | 1995 |
| Comparison of Ni/Au, Pd/Au, and Cr/Au metallizations for ohmic contacts to p-GaN JT Trexler, SJ Pearton, PH Holloway, MG Mier, KR Evans, RF Karlicek MRS Online Proceedings Library (OPL) 449, 1091, 1996 | 85 | 1996 |
| Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ... Solid-State Electronics 52 (5), 756-764, 2008 | 83 | 2008 |
| Origin of the blueshift in the intersubband infrared absorption in GaAs/As multiple quantum wells MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ... Physical Review B 43 (12), 9996, 1991 | 83 | 1991 |
| Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ... Applied Physics Letters 95 (12), 2009 | 80 | 2009 |
| Alloy scattering in p‐type AlxGa1−xAs DC Look, DK Lorance, JR Sizelove, CE Stutz, KR Evans, DW Whitson Journal of applied physics 71 (1), 260-266, 1992 | 79 | 1992 |
| Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz Applied physics letters 57 (17), 1790-1792, 1990 | 78 | 1990 |
| Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ... IEEE Electron device letters 33 (3), 366-368, 2012 | 76 | 2012 |
