Gernot Ecke
Gernot Ecke
TU Ilmenau, FG Nanotechnologie
Потвърден имейл адрес: tu-ilmenau.de
Phase selective growth and properties of rhombohedral and cubic indium oxide
CY Wang, V Cimalla, H Romanus, T Kups, G Ecke, T Stauden, M Ali, ...
Applied physics letters 89 (1), 011904, 2006
Growth of cubic InN on -plane sapphire
V Cimalla, J Pezoldt, G Ecke, R Kosiba, O Ambacher, L Spieß, G Teichert, ...
Applied physics letters 83 (17), 3468-3470, 2003
Influence of thermal annealing on PCDTBT: PCBM composition profiles
O Synooka, KR Eberhardt, CR Singh, F Hermann, G Ecke, B Ecker, ...
Advanced Energy Materials 4 (5), 1300981, 2014
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
H Romanus, V Cimalla, JA Schaefer, L Spieß, G Ecke, J Pezoldt
Thin Solid Films 359 (2), 146-149, 2000
Surface band bending at nominally undoped and Mg‐doped inn by Auger electron spectroscopy
V Cimalla, M Niebelschütz, G Ecke, V Lebedev, O Ambacher, ...
physica status solidi (a) 203 (1), 59-65, 2006
Comparison of normal and inverse poly (3-hexylthiophene)/fullerene solar cell architectures
M Al-Ibrahim, S Sensfuss, J Uziel, G Ecke, O Ambacher
Solar Energy Materials and Solar Cells 85 (2), 277-283, 2005
Nanoscale multilayer WC/C coatings developed for nanopositioning: Part I. Microstructures and mechanical properties
M Gubisch, Y Liu, L Spiess, H Romanus, S Krischok, G Ecke, JA Schaefer, ...
Thin Solid Films 488 (1-2), 132-139, 2005
Properties of rf-sputtered indium–tin-oxynitride thin films
E Aperathitis, M Bender, V Cimalla, G Ecke, M Modreanu
Journal of applied physics 94 (2), 1258-1266, 2003
Influence of ion implantation on titanium surfaces for medical applications
S Krischok, C Blank, M Engel, R Gutt, G Ecke, J Schawohl, L Spieß, ...
Surface Science 601 (18), 3856-3860, 2007
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
V Lebedev, FM Morales, H Romanus, S Krischok, G Ecke, V Cimalla, ...
Journal of applied physics 98 (9), 093508, 2005
Reduced surface electron accumulation at InN films by ozone induced oxidation
V Cimalla, V Lebedev, CY Wang, M Ali, G Ecke, VM Polyakov, F Schwierz, ...
Applied physics letters 90 (15), 152106, 2007
Initial stages in the carbonization of (111) Si by solid-source molecular beam epitaxy
V Cimalla, T Stauden, G Ecke, F Scharmann, G Eichhorn, J Pezoldt, ...
Applied physics letters 73 (24), 3542-3544, 1998
Dielectric function of “narrow” band gap InN
R Goldhahn, S Shokhovets, V Cimalla, L Spiess, G Ecke, O Ambacher, ...
MRS Online Proceedings Library (OPL) 743, L5. 9, 2002
Sputtering effects in hexagonal silicon carbide
J Pezoldt, B Stottko, G Kupris, G Ecke
Materials Science and Engineering: B 29 (1-3), 94-98, 1995
The estimation of sputtering yields for SiC and Si
G Ecke, R Kosiba, V Kharlamov, Y Trushin, J Pezoldt
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
Effect of annealing on the properties of Indium− Tin− oxynitride films as ohmic contacts for GaN-based optoelectronic devices
M Himmerlich, M Koufaki, G Ecke, C Mauder, V Cimalla, JA Schaefer, ...
ACS applied materials & interfaces 1 (7), 1451-1456, 2009
Investigations of MBE grown InN and the influence of sputtering on the surface composition
S Krischok, V Yanev, O Balykov, M Himmerlich, JA Schaefer, R Kosiba, ...
Surface science 566, 849-855, 2004
Sputtering‐induced surface roughness of polycrystalline Al films and its influence on AES depth profiles
T Wöhner, G Ecke, H Roessler, S Hofmann
Surface and Interface Analysis: An International Journal devoted to the …, 1998
Tribological characteristics of WC1-x, W2C and WC tungsten carbide films
M Gubisch, Y Liu, S Krischok, G Ecke, L Spiess, JA Schaefer, C Knedlik
Tribology and Interface Engineering Series 48, 409-417, 2005
Effect of surface oxidation on electron transport in InN thin films
V Lebedev, CY Wang, V Cimalla, S Hauguth, T Kups, M Ali, G Ecke, ...
Journal of applied physics 101 (12), 123705, 2007
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Статии 1–20