Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray … D Biswas, SAK Md Faruque, AK Sinha, A Upadhyay, S Chakraborty
Applied Physics Letters 105 (11), 2014
10 2014 Effect of N2O ratio on the crystallization temperature of ZrO2 film deposited on Si by reactive sputtering in Ar/O2/N2O plasma SAKM Faruque, RP Giri, S Chakraborty
Materials Research Express 3 (11), 116406, 2016
3 2016 Study of temperature dependent zirconium silicide phases in Zr/Si structure by differential scanning calorimetry SAKM Faruque, SR Bhattachryya, AK Sinha, S Chakraborty
Journal of Physics D: Applied Physics 49 (6), 065102, 2015
3 2015 Oxidation kinetics of SAKM Faruque, AK Sinha, S Chakraborty
Journal of Materials Science: Materials in Electronics 27, 4923-4927, 2016
2 2016 Influence of rapid thermal annealing on electrical performance and reliability of HfO2 based MOS device D Biswas, SAKM Faruque, S Chakraborty
AIP Conference Proceedings 1665 (1), 2015
2 2015 Development of a linear temperature ramp-based automated system for furnace oxidation of semiconductor wafers SAKM Faruque, D Biswas, S Saha, S Chakraborty
International Journal of Instrumentation Technology 1 (4), 259-269, 2015
2 2015 Crystal growth kinetics of ultra-thin ZrO2 film on Si by differential scanning calorimetry SAKM Faruque, D Debnath, B Giri, S Chakraborty
Journal of Crystal Growth 459, 38-42, 2017
2017 Differential scanning calorimetry in determining kinetics parameter of Si oxidation SAKM Faruque, S Chakraborty
AIP Conference Proceedings 1731 (1), 2016
2016 Determination of annealing of temperature D Biswas, SAKM Faruque, S Chakraborty
AIP Conference Proceedings 1591 (1), 1433-1434, 2014
2014 Study of Spuntter Deposited Zr02 Films under different oxidation and annealing conditions SKAKMD FARUQUE
Mumbai, 0
