Surface diffusion and layer morphology of ((112¯ 2)) GaN grown by metal-organic vapor phase epitaxy S Ploch, T Wernicke, DV Dinh, M Pristovsek, M Kneissl
Journal of Applied Physics 111 (3), 2012
65 2012 GHz bandwidth semipolar (112 2) InGaN/GaN light-emitting diodes DV Dinh, Z Quan, B Roycroft, PJ Parbrook, B Corbett
Optics letters 41 (24), 5752-5755, 2016
49 2016 Size-Dependent Bandwidth of Semipolar ( M Haemmer, B Roycroft, M Akhter, DV Dinh, Z Quan, J Zhao, PJ Parbrook, ...
IEEE Photonics Technology Letters 30 (5), 439-442, 2018
42 2018 Polarity determination of polar and semipolar (112¯ 2) InN and GaN layers by valence band photoemission spectroscopy D Skuridina, DV Dinh, B Lacroix, P Ruterana, M Hoffmann, Z Sitar, ...
Journal of Applied Physics 114 (17), 2013
42 2013 Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (1 0 0) substrates DV Dinh, SM Kang, JH Yang, SW Kim, DH Yoon
Journal of crystal growth 311 (3), 495-499, 2009
42 2009 Growth and characterizations of semipolar (112¯ 2) InN DV Dinh, D Skuridina, S Solopow, M Frentrup, M Pristovsek, P Vogt, ...
Journal of Applied Physics 112 (1), 2012
37 2012 Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth JH Yang, SM Kang, DV Dinh, DH Yoon
Thin Solid Films 517 (17), 5057-5060, 2009
37 2009 Effect of V/III ratio on the growth of (112¯ 2) AlGaN by metalorganic vapour phase epitaxy DV Dinh, SN Alam, PJ Parbrook
Journal of Crystal Growth 435, 12-18, 2016
31 2016 Single phase (112¯ 2) AlN grown on (101¯ 0) sapphire by metalorganic vapour phase epitaxy DV Dinh, M Conroy, VZ Zubialevich, N Petkov, JD Holmes, PJ Parbrook
Journal of Crystal Growth 414, 94-99, 2015
28 2015 Semipolar (11 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates DV Dinh, M Akhter, S Presa, G Kozlowski, D O'Mahony, PP Maaskant, ...
physica status solidi (a) 212 (10), 2196-2200, 2015
25 2015 Lattice parameters of ScxAl1− xN layers grown on GaN (0001) by plasma-assisted molecular beam epitaxy DV Dinh, J Lähnemann, L Geelhaar, O Brandt
Applied Physics Letters 122 (15), 2023
23 2023 High-temperature thermal annealing of nonpolar (1 0 1¯ 0) AlN layers sputtered on (1 0 1¯ 0) sapphire DV Dinh, N Hu, Y Honda, H Amano, M Pristovsek
Journal of Crystal Growth 498, 377-380, 2018
22 2018 High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes Z Quan, DV Dinh, S Presa, B Roycroft, A Foley, M Akhter, D O'Mahony, ...
IEEE Photonics Journal 8 (5), 1-8, 2016
22 2016 Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers D Skuridina, DV Dinh, M Pristovsek, B Lacroix, MP Chauvat, P Ruterana, ...
Applied surface science 307, 461-467, 2014
21 2014 Enhanced UV luminescence from InAlN quantum well structures using two temperature growth VZ Zubialevich, TC Sadler, DV Dinh, SN Alam, H Li, P Pampili, ...
Journal of luminescence 155, 108-111, 2014
20 2014 How to obtain metal-polar untwinned high-quality (1 0− 1 3) GaN on m-plane sapphire N Hu, DV Dinh, M Pristovsek, Y Honda, H Amano
Journal of Crystal Growth 507, 205-208, 2019
19 2019 Aluminium incorporation in polar, semi-and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties DV Dinh, N Hu, Y Honda, H Amano, M Pristovsek
Scientific Reports 9 (1), 15802, 2019
18 2019 Silicon doping of semipolar (112¯ 2) AlxGa1− xN (0.50≤ x≤ 0.55) DV Dinh, P Pampili, PJ Parbrook
Journal of Crystal Growth 451, 181-187, 2016
18 2016 Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates DV Dinh, S Presa, M Akhter, PP Maaskant, B Corbett, PJ Parbrook
Semiconductor Science and Technology 30 (12), 125007, 2015
18 2015 MOVPE growth and high-temperature annealing of (101¯ 0) AlN layers on (101¯ 0) sapphire DV Dinh, H Amano, M Pristovsek
Journal of Crystal Growth 502, 14-18, 2018
17 2018 
Markus PristovsekProf. Nagoya UniversityПотвърден имейл адрес: imass.nagoya-u.ac.jp
