Следене
Duc V. Dinh
Duc V. Dinh
Tyndall National Institute, Cork, Ireland
Потвърден имейл адрес: tyndall.ie
Заглавие
Позовавания
Позовавания
Година
Surface diffusion and layer morphology of ((112¯ 2)) GaN grown by metal-organic vapor phase epitaxy
S Ploch, T Wernicke, DV Dinh, M Pristovsek, M Kneissl
Journal of Applied Physics 111 (3), 2012
622012
GHz bandwidth semipolar (112 2) InGaN/GaN light-emitting diodes
DV Dinh, Z Quan, B Roycroft, PJ Parbrook, B Corbett
Optics letters 41 (24), 5752-5755, 2016
482016
Polarity determination of polar and semipolar (112¯ 2) InN and GaN layers by valence band photoemission spectroscopy
D Skuridina, DV Dinh, B Lacroix, P Ruterana, M Hoffmann, Z Sitar, ...
Journal of Applied Physics 114 (17), 2013
422013
Synthesis and field emission properties of triangular-shaped GaN nanowires on Si (1 0 0) substrates
DV Dinh, SM Kang, JH Yang, SW Kim, DH Yoon
Journal of crystal growth 311 (3), 495-499, 2009
412009
Size-Dependent Bandwidth of Semipolar ( ) Light-Emitting-Diodes
M Haemmer, B Roycroft, M Akhter, DV Dinh, Z Quan, J Zhao, PJ Parbrook, ...
IEEE Photonics Technology Letters 30 (5), 439-442, 2018
402018
Growth and characterizations of semipolar (112¯ 2) InN
DV Dinh, D Skuridina, S Solopow, M Frentrup, M Pristovsek, P Vogt, ...
Journal of Applied Physics 112 (1), 2012
382012
Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth
JH Yang, SM Kang, DV Dinh, DH Yoon
Thin Solid Films 517 (17), 5057-5060, 2009
372009
Effect of V/III ratio on the growth of (112¯ 2) AlGaN by metalorganic vapour phase epitaxy
DV Dinh, SN Alam, PJ Parbrook
Journal of Crystal Growth 435, 12-18, 2016
272016
Single phase (112¯ 2) AlN grown on (101¯ 0) sapphire by metalorganic vapour phase epitaxy
DV Dinh, M Conroy, VZ Zubialevich, N Petkov, JD Holmes, PJ Parbrook
Journal of Crystal Growth 414, 94-99, 2015
262015
Semipolar (11 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates
DV Dinh, M Akhter, S Presa, G Kozlowski, D O'Mahony, PP Maaskant, ...
physica status solidi (a) 212 (10), 2196-2200, 2015
242015
High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes
Z Quan, DV Dinh, S Presa, B Roycroft, A Foley, M Akhter, D O'Mahony, ...
IEEE Photonics Journal 8 (5), 1-8, 2016
232016
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
D Skuridina, DV Dinh, M Pristovsek, B Lacroix, MP Chauvat, P Ruterana, ...
Applied surface science 307, 461-467, 2014
212014
High-temperature thermal annealing of nonpolar (1 0 1¯ 0) AlN layers sputtered on (1 0 1¯ 0) sapphire
DV Dinh, N Hu, Y Honda, H Amano, M Pristovsek
Journal of Crystal Growth 498, 377-380, 2018
192018
Enhanced UV luminescence from InAlN quantum well structures using two temperature growth
VZ Zubialevich, TC Sadler, DV Dinh, SN Alam, H Li, P Pampili, ...
Journal of luminescence 155, 108-111, 2014
192014
How to obtain metal-polar untwinned high-quality (1 0− 1 3) GaN on m-plane sapphire
N Hu, DV Dinh, M Pristovsek, Y Honda, H Amano
Journal of Crystal Growth 507, 205-208, 2019
172019
Silicon doping of semipolar (112¯ 2) AlxGa1− xN (0.50≤ x≤ 0.55)
DV Dinh, P Pampili, PJ Parbrook
Journal of Crystal Growth 451, 181-187, 2016
172016
Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates
DV Dinh, S Presa, M Akhter, PP Maaskant, B Corbett, PJ Parbrook
Semiconductor Science and Technology 30 (12), 125007, 2015
172015
Growth of semipolar (10 ̄1̄3) InN on m‐plane sapphire using MOVPE
DV Dinh, M Pristovsek, R Kremzow, M Kneissl
physica status solidi (RRL)–Rapid Research Letters 4 (5‐6), 127-129, 2010
172010
Synthesis of GaN nanowires and nanorods via self-growth mode control
SM Kang, TI Shin, DV Dinh, JH Yang, SW Kim, DH Yoon
Microelectronics journal 40 (2), 373-376, 2009
172009
Aluminium incorporation in polar, semi-and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
DV Dinh, N Hu, Y Honda, H Amano, M Pristovsek
Scientific Reports 9 (1), 15802, 2019
162019
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