Следене
Hubert C George
Hubert C George
Intel
Потвърден имейл адрес: alumni.nd.edu
Заглавие
Позовавания
Позовавания
Година
Qubits made by advanced semiconductor manufacturing
AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ...
arXiv preprint arXiv:2101.12650, 2021
1752021
Quantum computing assemblies
AA Elsherbini, JA Falcon, HC George, SM Liff, JS Clarke
US Patent 10,380,496, 2019
702019
Quantum well stacks for quantum dot devices
P Amin, NK Thomas, JS Clarke, JM Torres, R Pillarisetty, HC George, ...
US Patent 10,763,347, 2020
622020
Double-sided quantum dot devices
R Pillarisetty, JM Roberts, NK Thomas, HC George, JS Clarke
US Patent App. 16/323,682, 2019
542019
Quantum Transport Properties of Industrial
D Sabbagh, N Thomas, J Torres, R Pillarisetty, P Amin, HC George, ...
Physical Review Applied 12 (1), 014013, 2019
522019
Quantum circuit assemblies with triaxial cables
L Lampert, R Pillarisetty, NK Thomas, HC George, JM Roberts, ...
US Patent 10,565,515, 2020
482020
Gate arrangements in quantum dot devices
NK Thomas, JS Clarke, W Rachmady, R Pillarisetty, HC George, K Singh, ...
US Patent 10,490,727, 2019
432019
Quantum dot devices
HC George, R Pillarisetty, JM Roberts, NK Thomas, JS Clarke
US Patent App. 16/314,788, 2019
392019
Fin strain in quantum dot devices
R Pillarisetty, K Singh, PH Keys, R Caudillo, HC George, ZR Yoscovits, ...
US Patent 10,665,770, 2020
382020
High Volume Electrical Characterization of Semiconductor Qubits
R Pillarisetty, HC George, TF Watson, L Lampert, N Thomas, S Bojarski, ...
2019 IEEE International Electron Devices Meeting (IEDM), 31.5. 1-31.5. 4, 2019
302019
Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology
R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ...
2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018
302018
Experimental demonstration of hybrid CMOS-single electron transistor circuits
AA Prager, HC George, AO Orlov, GL Snider
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
242011
Metal-insulator-metal single electron transistors with tunnel barriers prepared by atomic layer deposition
G Karbasian, M McConnell, H George, L Schneider, M Filmer, A Orlov, ...
Applied Sciences 7 (3), 246, 2017
222017
Reducing crosstalk from flux bias lines in qubit devices
L Lampert, AA Elsherbini, JS Clarke, JM Roberts, R Pillarisetty, ...
US Patent 10,847,705, 2020
192020
Application of negative differential conductance in single-electron transistors for background charge characterization
HC George, M Pierre, X Jehl, AO Orlov, M Sanquer, GL Snider
Applied physics letters 96 (4), 042114, 2010
192010
Novel method for fabrication of nanoscale single-electron transistors: Electron beam induced deposition of Pt and atomic layer deposition of tunnel barriers
HC George, TA Orlova, AO Orlov, GL Snider
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
182011
Quantum circuit assemblies with vertically-stacked parallel-plate capacitors
R Caudillo, ZR Yoscovits, L Lampert, DJ Michalak, JM Roberts, ...
US Patent 10,665,769, 2020
172020
Gate arrangements in quantum dot devices
NK Thomas, R Pillarisetty, K Singh, HC George, JM Roberts, DJ Michalak, ...
US Patent 10,475,912, 2019
172019
Quantum circuit assemblies with at least partially buried transmission lines and capacitors
HC George, AA Elsherbini, L Lampert, JS Clarke, R Pillarisetty, ...
US Patent App. 16/012,815, 2019
172019
Donor-or acceptor-based spin qubits with isotopically purified materials
NK Thomas, JS Clarke, JM Torres, L Lampert, R Pillarisetty, HC George, ...
US Patent 10,388,848, 2019
152019
Системата не може да изпълни операцията сега. Опитайте отново по-късно.
Статии 1–20