Следене
Tsu-Jae King Liu
Заглавие
Позовавания
Позовавания
Година
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
D Hisamoto, WC Lee, J Kedzierski, H Takeuchi, K Asano, C Kuo, ...
IEEE transactions on electron devices 47 (12), 2320-2325, 2000
23482000
Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
WY Choi, BG Park, JD Lee, TJK Liu
IEEE Electron Device Letters 28 (8), 743-745, 2007
20322007
Sub 50-nm finfet: Pmos
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
8521999
FinFET scaling to 10 nm gate length
B Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ...
Digest. International Electron Devices Meeting,, 251-254, 2002
8422002
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
C Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ...
US Patent 6,413,802, 2002
6822002
Sub-50 nm P-channel FinFET
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
IEEE Transactions on Electron Devices 48 (5), 880-886, 2001
6182001
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
YC Yeo, TJ King, C Hu
Journal of applied physics 92 (12), 7266-7271, 2002
5602002
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
T Skotnicki, JA Hutchby, TJ King, HSP Wong, F Boeuf
IEEE Circuits and Devices Magazine 21 (1), 16-26, 2005
5532005
Frequency-independent equivalent-circuit model for on-chip spiral inductors
Y Cao, RA Groves, X Huang, ND Zamdmer, JO Plouchart, RA Wachnik, ...
IEEE Journal of solid-state circuits 38 (3), 419-426, 2003
5282003
Sub-20 nm CMOS FinFET technologies
YK Choi, N Lindert, P Xuan, S Tang, D Ha, E Anderson, TJ King, J Bokor, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
4592001
A folded-channel MOSFET for deep-sub-tenth micron era
D Hisamoto, WC Lee, J Kedzierski, E Anderson, H Takeuchi, K Asano, ...
IEDM Tech. Dig 1998, 1032-1034, 1998
4201998
Germanium-source tunnel field effect transistors with record high ION/IOFF
SH Kim, H Kam, C Hu, TJK Liu
2009 Symposium on VLSI Technology, 178-179, 2009
4172009
Segmented channel MOS transistor
TJ King, V Moroz
US Patent 7,247,887, 2007
4122007
Methods of designing an integrated circuit on corrugated substrate
TJ King, V Moroz
US Patent 7,960,232, 2011
4112011
Ultra-thin body SOI MOSFET for deep-sub-tenth micron era
YK Choi, K Asano, N Lindert, V Subramanian, TJ King, J Bokor, C Hu
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
3821999
Extremely scaled silicon nano-CMOS devices
L Chang, Y Choi, D Ha, P Ranade, S Xiong, J Bokor, C Hu, TJ King
Proceedings of the IEEE 91 (11), 1860-1873, 2003
3712003
A spacer patterning technology for nanoscale CMOS
YK Choi, TJ King, C Hu
IEEE Transactions on Electron Devices 49 (3), 436-441, 2002
3582002
Nanoscale CMOS spacer FinFET for the terabit era
YK Choi, TJ King, C Hu
IEEE Electron Device Letters 23 (1), 25-27, 2002
3442002
Integrated circuit on corrugated substrate
TJ King, V Moroz
US Patent 7,190,050, 2007
3412007
Evidence for Higgs boson decay to a pair of muons
AM Sirunyan, A Tumasyan, W Adam, T Bergauer, M Dragicevic, J Erö, ...
Journal of High Energy Physics 2021 (1), 1-68, 2021
3202021
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