A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery S Mahapatra, AE Islam, S Deora, VD Maheta, K Joshi, A Jain, MA Alam
2011 International Reliability Physics Symposium, 6A. 3.1-6A. 3.10, 2011
122 2011 Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics D Veksler, G Bersuker, B Chakrabarti, E Vogel, S Deora, K Matthews, ...
2012 International Electron Devices Meeting, 9.6. 1-9.6. 4, 2012
57 2012 Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time S Koveshnikov, K Matthews, K Min, DC Gilmer, MG Sung, S Deora, HF Li, ...
2012 International Electron Devices Meeting, 20.4. 1-20.4. 3, 2012
51 2012 Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
49 2013 On the differences between ultra-fast NBTI measurements and Reaction-Diffusion theory AE Islam, S Mahapatra, S Deora, VD Maheta, MA Alam
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
35 2009 Intrinsic reliability improvement in biaxially strained SiGe p-MOSFETs S Deora, A Paul, R Bijesh, J Huang, G Klimeck, G Bersuker, PD Krisch, ...
IEEE electron device letters 32 (3), 255-257, 2011
25 2011 Essential aspects of negative bias temperature instability (nbti) AE Islam, S Mahapatra, S Deora, VD Maheta, MA Alam
ECS Transactions 35 (4), 145, 2011
20 2011 A common framework of NBTI generation and recovery in plasma-nitrided SiON p-MOSFETs S Deora, VD Maheta, AE Islam, MA Alam, S Mahapatra
IEEE Electron Device Letters 30 (9), 978-980, 2009
20 2009 NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion (RD) and dispersive hole trapping model S Deora, VD Maheta, S Mahapatra
2010 IEEE International Reliability Physics Symposium, 1105-1114, 2010
16 2010 A Comparative NBTI Study of S Deora, VD Maheta, G Bersuker, C Olsen, KZ Ahmed, R Jammy, ...
IEEE electron device letters 30 (2), 152-154, 2008
16 2008 Statistical assessment of endurance degradation in high and low resistive states of the HfO2 -based RRAM S Deora, G Bersuker, MG Sung, DC Gilmer, PD Kirsch, HF Li, H Chong, ...
2013 IEEE International Reliability Physics Symposium (IRPS), MY. 2.1-MY. 2.5, 2013
15 2013 Characterization and modeling of NBTI stress, recovery, material dependence and AC degradation using RD framework S Mahapatra, AE Islam, S Deora, VD Maheta, K Joshi, MA Alam
18th IEEE International Symposium on the Physical and Failure Analysis of …, 2011
15 2011 In-line-test of variability and bit-error-rate of hfox-based resistive memory BL Ji, H Li, Q Ye, S Gausepohl, S Deora, D Veksler, S Vivekanand, ...
2015 IEEE International Memory Workshop (IMW), 1-4, 2015
14 2015 AC variability and endurance measurement technique for resistive switching memories S Deora, G Bersuker, K Matthews, DC Gilmer, PD Kirsch
IEEE Transactions on Device and Materials Reliability 14 (1), 300-303, 2013
14 2013 Energy control paradigm for compliance-free reliable operation of RRAM PR Shrestha, D Nminibapiel, JH Kim, JP Campbell, KP Cheung, S Deora, ...
2014 IEEE International Reliability Physics Symposium, MY. 10.1-MY. 10.4, 2014
12 2014 New insights into SILC-based life time extraction CD Young, G Bersuker, M Jo, K Matthews, J Huang, S Deora, KW Ang, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 5D. 3.1-5D. 3.5, 2012
12 2012 Positive bias instability in gate-first and gate-last InGaAs channel n-MOSFETs S Deora, G Bersuker, TW Kim, DH Kim, C Hobbs, PD Kirsch, KC Sahoo, ...
2014 IEEE International Reliability Physics Symposium, 3C. 5.1-3C. 5.4, 2014
11 2014 VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module RTP Lee, RJW Hill, WY Loh, RH Baek, S Deora, K Matthews, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 2.6. 1-2.6. 4, 2013
9 2013 Dependence of the filament resistance on the duration of current overshoot P Shrestha, D Nminibapiel, JP Campbell, KP Cheung, H Baumgart, ...
2013 IEEE International Integrated Reliability Workshop Final Report, 55-58, 2013
9 2013 Development of a Novel Ultrafast Direct Threshold Voltage S Deora, P Narayanasetti, M Thakkar, S Mahapatra
IEEE transactions on electron devices 58 (10), 3506-3513, 2011
9 2011 