Следене
Sayema Chowdhury
Sayema Chowdhury
Потвърден имейл адрес: utexas.edu
Заглавие
Позовавания
Позовавания
Година
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
A Rai, HCP Movva, A Roy, D Taneja, S Chowdhury, SK Banerjee
Crystals 8 (8), 316, 2018
1012018
Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
Nature communications 11 (1), 1-9, 2020
212020
Intra-domain periodic defects in monolayer MoS2
A Roy, R Ghosh, A Rai, A Sanne, K Kim, HCP Movva, R Dey, T Pramanik, ...
Applied Physics Letters 110 (20), 201905, 2017
132017
Two-dimensional to three-dimensional growth of transition metal diselenides by chemical vapor deposition: interplay between fractal, dendritic, and compact morphologies
S Chowdhury, A Roy, I Bodemann, SK Banerjee
ACS applied materials & interfaces 12 (13), 15885-15892, 2020
122020
Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal–Organic Chemical Vapor Deposition
S Chowdhury, A Roy, C Liu, MH Alam, R Ghosh, H Chou, D Akinwande, ...
ACS omega 6 (15), 10343-10351, 2021
72021
Direct growth of on electrolytic substrate and realization of high-mobility transistors
MH Alam, S Chowdhury, A Roy, MH Braga, SK Banerjee, D Akinwande
Physical Review Materials 5 (5), 054003, 2021
52021
Crystals 8, 316 (2018)
A Rai, HCP Movva, A Roy, D Taneja, S Chowdhury, SK Banerjee
5
Stress-induced bandgap renormalization in atomic crystals
Z Sun, J Beaumariage, HCP Movva, S Chowdhury, A Roy, SK Banerjee, ...
Solid State Communications 288, 18-21, 2019
42019
Integration of 2D Materials for Electronics Applications
F Giannazzo, S Lara Avila, J Eriksson, S Sonde
MDPI, 2019
42019
Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide
MH Alam, S Chowdhury, A Roy, X Wu, R Ge, MA Rodder, J Chen, Y Lu, ...
ACS nano 16 (3), 3756-3767, 2022
22022
Performance analysis of InAs/AlSb MOS-HEMT by self-consistent capacitance-voltage characterization and direct tunneling gate leakage current
I Ahmed, S Chowdhury, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 72 (2), 189, 2016
22016
Solid Electrolytic Substrates for High Performance Transistors and Circuits
MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
78th Device Research Conference, 2020
12020
Devices and defects in two-dimensional materials: outlook and perspectives
A Rai, A Roy, A Valsaraj, S Chowdhury, D Taneja, Y Wang, LF Register, ...
Defects in Two-Dimensional Materials, 339-401, 2022
2022
Author Correction: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
Nature Communications 12 (1), 1-1, 2021
2021
Optoelectronic mixing with high-frequency graphene transistors (vol 11, 3203, 2020)
MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
NATURE COMMUNICATIONS 12 (1), 2021
2021
Design and optimization of an InGaP/GaAs/SixGe1-x solar cell considering recombination effects
S Chowdhury
Department of Electrical and Electronic Engineering (EEE), 2015
2015
2D to 3D Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic and Compact Morphologies
S Chowdhury, A Roy, I Bodemann, SK Banerjee
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