| Polarization-matched GaInN∕ AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop MF Schubert, J Xu, JK Kim, EF Schubert, MH Kim, S Yoon, SM Lee, ... Applied physics letters 93 (4), 2008 | 602 | 2008 |
| The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes D Zhu, J Xu, AN Noemaun, JK Kim, EF Schubert, MH Crawford, ... Applied Physics Letters 94 (8), 2009 | 228 | 2009 |
| Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes J Xu, MF Schubert, AN Noemaun, D Zhu, JK Kim, EF Schubert, MH Kim, ... Applied Physics Letters 94 (1), 2009 | 204 | 2009 |
| On resonant optical excitation and carrier escape in GaInN/GaN quantum wells MF Schubert, J Xu, Q Dai, FW Mont, JK Kim, EF Schubert Applied Physics Letters 94 (8), 2009 | 85 | 2009 |
| Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes MF Schubert, Q Dai, J Xu, JK Kim, EF Schubert Applied Physics Letters 95 (19), 2009 | 39 | 2009 |
| Effects of polarization-field tuning in GaInN light-emitting diodes J Xu, MF Schubert, D Zhu, J Cho, EF Schubert, H Shim, C Sone Applied Physics Letters 99 (4), 2011 | 33 | 2011 |
| Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop S Hwang, W Jin Ha, J Kyu Kim, J Xu, J Cho, E Fred Schubert Applied Physics Letters 99 (18), 2011 | 28 | 2011 |
E. Fred Schubert, Future Chips Conste...Rensselaer Polytechnic InstituteПотвърден имейл адрес: rpi.edu
