E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (4), 545-548, 2020
51 2020 OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, J Wei, J He, C Wang, Z Zheng, KJ Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (3 …, 2020
45 2020 E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability M Hua, J Chen, C Wang, L Liu, L Li, J Zhao, Z Jiang, J Wei, L Zhang, ...
2020 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2020
23 2020 Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs Z Jiang, M Hua, X Huang, L Li, C Wang, J Chen, KJ Chen
IEEE Transactions on Power Electronics 37 (5), 6018-6025, 2021
21 2021 Characterization of Dynamic Threshold Voltage in Schottky-Type p -GaN Gate HEMT Under High-Frequency Switching K Zhong, H Xu, Z Zheng, J Chen, KJ Chen
IEEE Electron Device Letters 42 (4), 501-504, 2021
16 2021 Impact of hole-deficiency and charge trapping on threshold voltage stability of p-GaN HEMT under reverse-bias stress J Chen, M Hua, J Jiang, J He, J Wei, KJ Chen
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
15 2020 Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride J Chen, J Zhao, S Feng, L Zhang, Y Cheng, H Liao, Z Zheng, X Chen, ...
Advanced Materials 35 (12), 2208960, 2023
13 2023 Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, C Wang, L Liu, L Li, J Wei, L Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 42 (7), 986-989, 2021
12 2021 Gate Current Transport in Enhancement-Mode p -n Junction/AlGaN/GaN (PNJ) HEMT M Hua, C Wang, J Chen, J Zhao, S Yang, L Zhang, Z Zheng, J Wei, ...
IEEE Electron Device Letters 42 (5), 669-672, 2021
11 2021 Gate Leakage and Reliability of GaN-Channel FET With SiNₓ/GaON Staggered Gate Stack L Zhang, Z Zheng, W Song, T Chen, S Feng, J Chen, M Hua, KJ Chen
IEEE Electron Device Letters 43 (11), 1822-1825, 2022
5 2022 Gate reliability and VTH stability investigations of p-GaN HEMTs M Hua, C Wang, J Chen, L Zhang, Z Zheng, KJ Chen
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020
5 2020 GaN Power Integration Technology and Its Future Prospects J Wei, Z Zheng, G Tang, H Xu, G Lyu, L Zhang, J Chen, M Hua, S Feng, ...
IEEE Transactions on Electron Devices, 2023
4 2023 A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT K Zhong, H Xu, S Yang, Z Zheng, J Chen, KJ Chen
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
4 2021 Switching Performance of GaN -FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation J Chen, T Chen, Z Jiang, C Wang, Z Zheng, J Wei, KJ Chen, M Hua
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
2 2023 Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT Z Jiang, M Hua, X Huang, L Li, J Chen, KJ Chen
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
2 2021 Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT J Chen, C Wang, J Jiang, M Hua
2020 IEEE 9th International Power Electronics and Motion Control Conference …, 2020
2 2020 Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth J Zhang, J Zhao, J Chen, M Hua
Applied Physics Letters 124 (2), 2024
1 2024 HyFET—A GaN/SiC Hybrid Field-Effect Transistor S Feng, Z Zheng, Y Wang, G Lyu, K Liu, Y Cheng, J Chen, T Chen, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
1 2023 Roles of Hole Trap on Gate Leakage of p -GaN HEMTs at Cryogenic Temperatures Z Jiang, X Wang, J Zhao, J Chen, J Tang, C Wang, H Chen, S Huang, ...
IEEE Electron Device Letters, 2023
1 2023 Electroluminescence and Gate Carrier Dynamics in a Schottky-type p -GaN Gate Double-Channel GaN HEMT S Feng, H Liao, T Chen, J Chen, Y Cheng, M Hua, Z Zheng, KJ Chen
IEEE Electron Device Letters, 2023
1 2023