Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature communications 11 (1), 3385, 2020
312 2020 Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
164 2018 Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence W Goes, Y Wimmer, AM El-Sayed, G Rzepa, M Jech, AL Shluger, ...
Microelectronics Reliability 87, 286-320, 2018
124 2018 Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
81 2015 treatment of silicon-hydrogen bond rupture at interfacesM Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser
Physical Review B 100 (19), 195302, 2019
41 2019 Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
34 2017 Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
31 2017 Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ...
IEEE Transactions on Electron Devices 66 (1), 232-240, 2018
30 2018 Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G , V D } Bias Space: Implications and Peculiarities M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ...
IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020
22 2020 Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part II: Theory M Jech, B Ullmann, G Rzepa, S Tyaginov, A Grill, M Waltl, D Jabs, ...
IEEE Transactions on Electron Devices 66 (1), 241-248, 2018
22 2018 The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n-and p-channel LDMOS devices P Sharma, S Tyaginov, M Jech, Y Wimmer, F Rudolf, H Enichlmair, ...
Solid-State Electronics 115, 185-191, 2016
17 2016 The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017
15 2017 Applicability of Shockley–Read–Hall theory for interface states B Ruch, M Jech, G Pobegen, T Grasser
IEEE Transactions on Electron Devices 68 (4), 2092-2097, 2021
13 2021 A compact physics analytical model for hot-carrier degradation S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
13 2020 Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ...
Microelectronics Reliability 139, 114801, 2022
12 2022 First–principles parameter–free modeling of n–and p–FET hot–carrier degradation M Jech, S Tyaginov, B Kaczer, J Franco, D Jabs, C Jungemann, M Waltl, ...
2019 IEEE International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2019
12 2019 Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices B Kaczer, J Franco, S Tyaginov, M Jech, G Rzepa, T Grasser, ...
Journal of Vacuum Science & Technology B 35 (1), 2017
12 2017 Quantum chemistry treatment of silicon-hydrogen bond rupture by nonequilibrium carriers in semiconductor devices M Jech, AM El-Sayed, S Tyaginov, D Waldhör, F Bouakline, P Saalfrank, ...
Physical Review Applied 16 (1), 014026, 2021
10 2021 Bi-modal variability of nFinFET characteristics during hot-carrier stress: A modeling approach A Makarov, B Kaczer, A Chasin, M Vandemaele, E Bury, M Jech, A Grill, ...
IEEE Electron Device Letters 40 (10), 1579-1582, 2019
10 2019 Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs S Tyaginov, AM El-Sayed, A Makarov, A Chasin, H Arimura, ...
2019 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2019
9 2019