High-mobility window for two-dimensional electron gases at ultrathin AlN∕ GaN heterojunctions Y Cao, D Jena
Applied physics letters 90 (18), 2007
353 2007 Heat‐transport mechanisms in superlattices YK Koh, Y Cao, DG Cahill, D Jena
Advanced Functional Materials 19 (4), 610-615, 2009
278 2009 AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
215 2008 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
205 2015 MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
185 2012 An experimental demonstration of GaN CMOS technology R Chu, Y Cao, M Chen, R Li, D Zehnder
IEEE Electron Device Letters 37 (3), 269-271, 2016
173 2016 High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth Y Cao, R Chu, R Li, M Chen, R Chang, B Hughes
Applied Physics Letters 108, 062103, 2016
150 2016 600 V/ R Li, Y Cao, M Chen, R Chu
IEEE Electron Device Letter 37 (11), 1466, 2016
140 2016 210-GHz InAlN/GaN HEMTs with dielectric-free passivation R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
133 2011 Nanowire Channel InAlN/GaN HEMTs With High Linearity of DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ...
IEEE electron device letters 34 (8), 969-971, 2013
130 2013 Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
114 2011 ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ...
IEEE Electron Device Letters 40 (7), 1056-1059, 2019
97 2019 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
97 2011 3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination M Xiao, Y Ma, K Cheng, K Liu, A Xie, E Beam, Y Cao, Y Zhang
IEEE Electron Device Letters 41 (8), 1177-1180, 2020
88 2020 Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE electron device letters 34 (7), 852-854, 2013
82 2013 Quaternary Barrier InAlGaN HEMTs With R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
79 2013 Compositional modulation and optical emission in AlGaN epitaxial films M Gao, ST Bradley, Y Cao, D Jena, Y Lin, SA Ringel, J Hwang, WJ Schaff, ...
Journal of Applied physics 100 (10), 2006
77 2006 MBE growth of high conductivity single and multiple AlN/GaN heterojunctions Y Cao, K Wang, G Li, T Kosel, H Xing, D Jena
Journal of crystal growth 323 (1), 529-533, 2011
68 2011 Threshold Voltage Control in G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ...
IEEE electron device letters 31 (9), 954-956, 2010
66 2010 RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
63 2020 
Debdeep JenaCornell UniversityПотвърден имейл адрес: cornell.edu
