| Giant spin-torque diode sensitivity in the absence of bias magnetic field B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ... Nature communications 7 (1), 1-7, 2016 | 174 | 2016 |
| Giant spin-torque diode sensitivity in the absence of bias magnetic field B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ... Nature communications 7 (1), 1-7, 2016 | 174 | 2016 |
| A graphene quantum dot with a single electron transistor as an integrated charge sensor LJ Wang, G Cao, T Tu, HO Li, C Zhou, XJ Hao, Z Su, GC Guo, HW Jiang, ... Applied Physics Letters 97 (26), 262113, 2010 | 148 | 2010 |
| Strong and Tunable Spin− Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires XJ Hao, T Tu, G Cao, C Zhou, HO Li, GC Guo, WY Fung, Z Ji, GP Guo, ... Nano letters 10 (8), 2956-2960, 2010 | 133 | 2010 |
| Electron spin resonance and spin–valley physics in a silicon double quantum dot X Hao, R Ruskov, M Xiao, C Tahan, HW Jiang Nature communications 5 (1), 1-8, 2014 | 118 | 2014 |
| Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer J Zhang, Y Huai, RY Ranjan, Y Zhou, Z Wang, X Hao US Patent 9,679,625, 2017 | 116 | 2017 |
| Magnetic memory element with iridium anti-ferromagnetic coupling layer H Gan, Y Huai, Y Zhou, Z Wang, BK Yen, X Hao, P Xu US Patent App. 10/032,979, 2018 | 74* | 2018 |
| Experimental Observation of Single Skyrmion Signatures in a Magnetic Tunnel Junction NE Penthorn, X Hao, Z Wang, Y Huai, HW Jiang Physical Review Letters 122 (25), 257201, 2019 | 63 | 2019 |
| High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications Y Huai, H Gan, Z Wang, P Xu, X Hao, BK Yen, R Malmhall, N Pakala, ... Applied Physics Letters 112 (9), 092402, 2018 | 44 | 2018 |
| Method for sensing memory element coupled to selector device H Yang, X Wang, J Zhang, X Hao, Z Wang, K Satoh US Patent App. 10/153,017, 2018 | 41* | 2018 |
| Threshold switching selector and 1S1R integration development for 3D cross-point STT-MRAM H Yang, X Hao, Z Wang, R Malmhall, H Gan, K Satoh, J Zhang, DH Jung, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.1. 1-38.1. 4, 2017 | 40 | 2017 |
| Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer H Gan, R Malmhall, Z Wang, BK Yen, J Zhang, X Wang, Y Zhou, X Hao, ... Applied Physics Letters 105 (19), 192403, 2014 | 32 | 2014 |
| Controllable tunnel coupling and molecular states in a graphene double quantum dot LJ Wang, HO Li, T Tu, G Cao, C Zhou, XJ Hao, Z Su, M Xiao, GC Guo, ... Applied Physics Letters 100 (2), 022106-022106-5, 2012 | 32 | 2012 |
| Magnetic random access memory with perpendicular enhancement layer H Gan, Y Huai, Y Zhou, Z Wang, X Wang, BK Yen, X Hao US Patent 9,082,951, 2015 | 29 | 2015 |
| Magnetic random access memory with perpendicular enhancement layer H Gan, Y Huai, Y Zhou, Z Wang, X Wang, BK Yen, X Hao US Patent 9,082,951, 2015 | 29 | 2015 |
| Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Experimental studies of scaling behavior of a quantum Hall system with a tunable Landau level mixing YJ Zhao, T Tu, XJ Hao, GC Guo, HW Jiang, GP Guo Physical Review B Condensed Matter And Materials Physics 78 (23), 233301, 2008 | 20* | 2008 |
| Magnetic memory element with composite fixed layer Z Wang, H Gan, Y Huai, Y Zhou, X Wang, BK Yen, X Hao US Patent 9,831,421, 2017 | 18 | 2017 |
| Magnetic memory element with composite fixed layer Z Wang, H Gan, Y Huai, Y Zhou, X Wang, BK Yen, X Hao US Patent 9,831,421, 2017 | 18 | 2017 |
| Magnetic random access memory with perpendicular enhancement layer Z Wang, H Gan, Y Huai, Y Zhou, X Wang, BK Yen, X Hao US Patent App. 14/797,458, 2017 | 18* | 2017 |
| Magnetic random access memory with perpendicular enhancement layer Z Wang, H Gan, Y Huai, Y Zhou, X Wang, BK Yen, X Hao US Patent App. 14/797,458, 2015 | 18* | 2015 |
