Deep level defects throughout the bandgap of (010) β-Ga2 O3 detected by optically and thermally stimulated defect spectroscopy Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 052105, 2016
287 2016 The effects of CdCl2 on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells SA Ringel, AW Smith, MH MacDougal, A Rohatgi
Journal of applied physics 70 (2), 881-889, 1991
248 1991 Impact of carbon on trap states in n -type GaN grown by metalorganic chemical vapor deposition A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ...
Applied Physics Letters 84 (3), 374-376, 2004
209 2004 Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel
Journal of Applied physics 98 (5), 053704, 2005
194 2005 Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy TJ Grassman, MR Brenner, S Rajagopalan, R Unocic, R Dehoff, M Mills, ...
Applied Physics Letters 94 (23), 232106, 2009
193 2009 Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage MR Lueck, CL Andre, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
IEEE Electron Device Letters 27 (3), 142-144, 2006
167 2006 Optically and thermally detected deep levels in n -type Schottky and GaN diodes A Hierro, D Kwon, SA Ringel, M Hansen, JS Speck, UK Mishra, ...
Applied Physics Letters 76 (21), 3064-3066, 2000
164 2000 Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
163 2002 Influence of metal choice on (010) β-Ga2 O3 Schottky diode properties E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 202102, 2017
157 2017 Impact of dislocation densities on and junction GaAs diodes and solar cells on SiGe virtual substrates CL Andre, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
Journal of applied physics 98 (1), 014502, 2005
156 2005 Hydrogen passivation of deep levels in A Hierro, SA Ringel, M Hansen, JS Speck, UK Mishra, SP DenBaars
Applied Physics Letters 77 (10), 1499-1501, 2000
151 2000 Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion RM Sieg, SA Ringel, SM Ting, EA Fitzgerald, RN Sacks
Journal of Electronic Materials 27, 900-907, 1998
149 1998 Nucleation-related defect-free GaP/Si (100) heteroepitaxy via metal-organic chemical vapor deposition TJ Grassman, JA Carlin, B Galiana, LM Yang, F Yang, MJ Mills, SA Ringel
Applied Physics Letters 102 (14), 142102, 2013
137 2013 Toward device-quality GaAs growth by molecular beam epitaxy on offcut substrates RM Sieg, SA Ringel, SM Ting, SB Samavedam, M Currie, T Langdo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
134 1998 Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates JA Carlin, SA Ringel, EA Fitzgerald, M Bulsara, BM Keyes
Applied Physics Letters 76 (14), 1884-1886, 2000
133 2000 -Ga2 O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHzZ Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
127 2019 Effect of threading dislocation density on Schottky diode characteristics AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel
Journal of applied physics 100 (2), 023709, 2006
127 2006 Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates CL Andre, JA Carlin, JJ Boeckl, DM Wilt, MA Smith, AJ Pitera, ML Lee, ...
IEEE Transactions on Electron Devices 52 (6), 1055-1060, 2005
116 2005 Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates CL Andre, JJ Boeckl, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, BM Keyes, ...
Applied physics letters 84 (18), 3447-3449, 2004
116 2004 Characterization of metamorphic GaAsP/Si materials and devices for photovoltaic applications TJ Grassman, MR Brenner, M Gonzalez, AM Carlin, RR Unocic, ...
IEEE Transactions on Electron Devices 57 (12), 3361-3369, 2010
115 2010