High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ...
IEEE Electron Device Letters 41 (1), 127-130, 2019
62 2019 Demonstration of mechanically exfoliated β-Ga2O3/GaN pn heterojunction J Montes, C Yang, H Fu, TH Yang, K Fu, H Chen, J Zhou, X Huang, ...
Applied Physics Letters 114 (16), 2019
59 2019 Demonstration of 1.27 kV Etch-Then-Regrow GaN - Junctions With Low Leakage for GaN Power Electronics K Fu, H Fu, X Huang, H Chen, TH Yang, J Montes, C Yang, J Zhou, ...
IEEE Electron Device Letters 40 (11), 1728-1731, 2019
58 2019 Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes K Fu, H Fu, X Huang, TH Yang, CY Cheng, PR Peri, H Chen, J Montes, ...
IEEE Journal of the Electron Devices Society 8, 74-83, 2020
56 2020 Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing H Fu, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, J Montes, TH Yang, ...
Applied Physics Express 12 (5), 051015, 2019
37 2019 GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD C Yang, H Fu, VN Kumar, K Fu, H Liu, X Huang, TH Yang, H Chen, J Zhou, ...
IEEE Transactions on Electron Devices 67 (10), 3972-3977, 2020
28 2020 Nonlinear nanophotonic devices in the ultraviolet to visible wavelength range J He, H Chen, J Hu, J Zhou, Y Zhang, A Kovach, C Sideris, MC Harrison, ...
Nanophotonics 9 (12), 3781-3804, 2020
27 2020 Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p -n Diodes With High Temperature Stability K Fu, H Fu, X Huang, TH Yang, H Chen, I Baranowski, J Montes, C Yang, ...
IEEE Electron Device Letters 40 (3), 375-378, 2019
26 2019 Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ...
Materials Today 49, 296-323, 2021
25 2021 Enhancement-Mode Gate-Recess-Free GaN-Based p -Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing C Yang, H Fu, P Peri, K Fu, TH Yang, J Zhou, J Montes, DJ Smith, Y Zhao
IEEE Electron Device Letters 42 (8), 1128-1131, 2021
24 2021 High-surface-area corundum nanoparticles by resistive hotspot-induced phase transformation B Deng, PA Advincula, DX Luong, J Zhou, B Zhang, Z Wang, EA McHugh, ...
Nature Communications 13 (1), 5027, 2022
19 2022 The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ...
Applied Physics Letters 118 (22), 2021
19 2021 Supercontinuum generation in high order waveguide mode with near-visible pumping using aluminum nitride waveguides H Chen, J Zhou, D Li, D Chen, AK Vinod, H Fu, X Huang, TH Yang, ...
ACS Photonics 8 (5), 1344-1352, 2021
19 2021 Gallium oxide-based optical nonlinear effects and photonics devices J Zhou, H Chen, K Fu, Y Zhao
Journal of Materials Research, 1-14, 2021
18 2021 AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric TH Yang, J Brown, K Fu, J Zhou, K Hatch, C Yang, J Montes, X Qi, H Fu, ...
Applied Physics Letters 118 (7), 2021
17 2021 Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3 J Montes, C Kopas, H Chen, X Huang, T Yang, K Fu, C Yang, J Zhou, X Qi, ...
Journal of Applied Physics 128 (20), 2020
16 2020 Vertical GaN-on-GaN Schottky barrier diodes with multi-floating metal rings TH Yang, H Fu, K Fu, C Yang, J Montes, X Huang, H Chen, J Zhou, X Qi, ...
IEEE Journal of the Electron Devices Society 8, 857-863, 2020
16 2020 Demonstration of low loss β-Ga2O3 optical waveguides in the UV–NIR spectra J Zhou, H Chen, H Fu, K Fu, X Deng, X Huang, TH Yang, JA Montes, ...
Applied Physics Letters 115 (25), 2019
16 2019 Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device X Huang, R Fang, C Yang, K Fu, H Fu, H Chen, TH Yang, J Zhou, ...
Nanotechnology 30 (21), 215201, 2019
12 2019 GaN-on-GaN pin diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment K Fu, Z He, C Yang, J Zhou, H Fu, Y Zhao
Applied Physics Letters 121 (9), 2022
11 2022