Следене
Sungjin Wi
Sungjin Wi
Потвърден имейл адрес: umich.edu
Заглавие
Позовавания
Позовавания
Година
Enhancement of Photovoltaic Response in Multilayer MoS2 Induced by Plasma Doping
S Wi, H Kim, M Chen, H Nam, LJ Guo, E Meyhofer, X Liang
ACS nano 8 (5), 5270-5281, 2014
4462014
Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping
M Chen, H Nam, S Wi, L Ji, X Ren, L Bian, S Lu, X Liang
Applied Physics Letters 103 (14), 2013
2502013
Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors
M Chen, H Nam, S Wi, G Priessnitz, IM Gunawan, X Liang
Acs Nano 8 (4), 4023-4032, 2014
1682014
MoS2 Transistors Fabricated via Plasma-Assisted Nanoprinting of Few-Layer MoS2 Flakes into Large-Area Arrays
H Nam, S Wi, H Rokni, M Chen, G Priessnitz, W Lu, X Liang
ACS nano 7 (7), 5870-5881, 2013
1412013
Transport characteristics of multichannel transistors made from densely aligned sub-10 nm half-pitch graphene nanoribbons
X Liang, S Wi
ACS nano 6 (11), 9700-9710, 2012
932012
Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics
H Nam, BR Oh, P Chen, M Chen, S Wi, W Wan, K Kurabayashi, X Liang
Scientific reports 5 (1), 10546, 2015
862015
Fabrication and comparison of MoS2 and WSe2 field-effect transistor biosensors
H Nam, BR Oh, M Chen, S Wi, D Li, K Kurabayashi, X Liang
Journal of Vacuum Science & Technology B 33 (6), 2015
642015
Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays
M Chen, H Nam, H Rokni, S Wi, JS Yoon, P Chen, K Kurabayashi, W Lu, ...
ACS nano 9 (9), 8773-8785, 2015
592015
Two different device physics principles for operating MoS2 transistor biosensors with femtomolar-level detection limits
H Nam, BR Oh, P Chen, JS Yoon, S Wi, M Chen, K Kurabayashi, X Liang
Applied Physics Letters 107 (1), 2015
592015
High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS2-metal heterostructures
S Wi, M Chen, H Nam, AC Liu, E Meyhofer, X Liang
Applied Physics Letters 104 (23), 2014
452014
Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors
M Chen, S Wi, H Nam, G Priessnitz, X Liang
Journal of Vacuum Science & Technology B 32 (6), 2014
402014
Photovoltaic response in pristine WSe2 layers modulated by metal-induced surface-charge-transfer doping
S Wi, M Chen, D Li, H Nam, E Meyhofer, X Liang
Applied Physics Letters 107 (6), 2015
372015
Nanoimprint-assisted shear exfoliation plus transfer printing for producing transition metal dichalcogenide heterostructures
D Li, S Wi, M Chen, B Ryu, X Liang
Journal of Vacuum Science & Technology B 34 (6), 2016
162016
Plasma-assisted techniques for fabricating semiconductor devices
X Liang, H Nam, S Wi, M Chen
US Patent 9,373,742, 2016
142016
Nanoimprinted substrates for high-yield production of topological insulator nanoribbons
S Wi, E Elezi, AC Liu, V Ray, K Sun, X Liang
Applied Physics A 111, 755-766, 2013
52013
Plasma-assisted printing and doping processes for manufacturing few-layer MoS2-based electronic and optoelectronic devices
X Liang, H Nam, S Wi, M Chen
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014 …, 2014
32014
Correction to Transport Characteristics of Multichannel Transistors Made from Densely Aligned Sub-10 nm Half-Pitch Graphene Nanoribbons
X Liang, S Wi
ACS Nano 7 (9), 8310-8310, 2013
12013
Field effect transistor memory device
X Liang, H Nam, S Wi, M Chen
US Patent 9,960,175, 2018
2018
Advanced Nanofabrication Technologies for Making Photo-Response Devices Based on Emerging Layered Transition Metal Dichalcogenides.
S Wi
2016
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