Следене
Peiyuan Wang
Peiyuan Wang
Потвърден имейл адрес: qti.qualcomm.com - Начална страница
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Позовавания
Година
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications
Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015
702015
Performance, power, and reliability tradeoffs of STT-RAM cell subject to architecture-level requirement
H Li, X Wang, ZL Ong, WF Wong, Y Zhang, P Wang, Y Chen
IEEE Transactions on Magnetics 47 (10), 2356-2359, 2011
482011
Radiation-induced soft error analysis of STT-MRAM: A device to circuit approach
J Yang, P Wang, Y Zhang, Y Cheng, W Zhao, Y Chen, HH Li
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2015
392015
A thermal and process variation aware MTJ switching model and its applications in soft error analysis
P Wang, W Zhang, R Joshi, R Kanj, Y Chen
Proceedings of the International Conference on Computer-Aided Design, 720-727, 2012
342012
High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
JJ Kan, C Park, P Wang, KIM Sungryul, SH Kang
US Patent 10,381,060, 2019
312019
A 1.0 V 45nm nonvolatile magnetic latch design and its robustness analysis
P Wang, X Chen, Y Chen, H Li, S Kang, X Zhu, W Wu
2011 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2011
212011
Switched capacitor transmitter circuits and methods
DK Butterfield, P Wang, JD Dunworth
US Patent 9,520,906, 2016
192016
An adaptive 3T-3MTJ memory cell design for STT-MRAM-based LLCs
L Xue, B Wu, B Zhang, Y Cheng, P Wang, C Park, J Kan, SH Kang, Y Xie
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (3), 484-495, 2018
182018
Physically unclonable function based on comparison of MTJ resistances
P Wang, JP Kim, JJ Kan, C Park, S Kang
US Patent 9,870,811, 2018
172018
ODESY: A novel 3T-3MTJ cell design with optimized area density, scalability and latency
L Xue, Y Cheng, J Yang, P Wang, Y Xie
2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 1-8, 2016
132016
Contactless data communication using in-plane magnetic fields, and related systems and methods
W Wu, SK Govindaswamy, RS Madala, P Wang, KHL Yuen, ...
US Patent 9,495,899, 2016
112016
System and method to generate a random number
JJ Kan, C Park, P Wang, SH Kang
US Patent 9,824,735, 2017
102017
Switched capacitor transmitter circuits and methods
DK Butterfield, P Wang, JD Dunworth
US Patent 9,531,409, 2016
102016
Method and apparatus for generating random numbers using a physical entropy source
W Wu, P Wang, RS Madala, SK Govindaswamy, KH Yuen, RP Gilmore, ...
US Patent 9,164,729, 2015
82015
Probabilistic design in spintronic memory and logic circuit
Y Chen, Y Zhang, P Wang
17th Asia and South Pacific Design Automation Conference, 323-328, 2012
62012
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
C Park, JJ Kan, P Wang, SH Kang
US Patent 10,431,734, 2019
52019
Universal statistical cure for predicting memory loss
R Joshi, R Kanj, P Wang, H Li
2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 236-239, 2011
52011
Nonpersistent errors optimization in spin-MOS logic and storage circuitry
P Wang, X Wang, Y Zhang, H Li, SP Levitan, Y Chen
IEEE transactions on magnetics 47 (10), 3860-3863, 2011
52011
Magnetic tunneling junction non-volatile register with feedback for robust read and write operations
Z Sun, RS Madala, SK Govindaswamy, KH Yuen, W Wu, P Wang
US Patent 9,147,454, 2015
32015
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
C Park, JJ Kan, P Wang, SH Kang
US Patent 10,833,254, 2020
2020
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