Следене
Jerzy Kanicki
Jerzy Kanicki
Professor of EECS, University of Michigan
Потвърден имейл адрес: eecs.umich.edu - Начална страница
Заглавие
Позовавания
Позовавания
Година
2-D numerical simulation of high performance amorphous In-Ga-Zn-O TFTs for flat panel displays
T Fung, CS Chuang, C Chen, K Abe, H Kumomi, J Kanicki
Am-FPd 8, 251-252, 2008
6262008
Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors
FR Libsch, J Kanicki
Applied Physics Letters 62 (11), 1286-1288, 1993
5881993
Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays
Y He, R Hattori, J Kanicki
IEEE Electron Device Letters 21 (12), 590-592, 2000
3772000
Thin-film organic polymer phototransistors
MC Hamilton, S Martin, J Kanicki
IEEE Transactions on Electron Devices 51 (6), 877-885, 2004
3032004
Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors
TC Fung, CS Chuang, C Chen, K Abe, R Cottle, M Townsend, H Kumomi, ...
Journal of Applied Physics 106 (8), 2009
2882009
Amorphous and microcrystalline semiconductor devices: optoelectronic devices
J Kanicki
(No Title), 1991
267*1991
Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II.
WL Warren, J Kanicki, FC Rong, EH Poindexter
Journal of the Electrochemical Society 139 (3), 880, 1992
2551992
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
DT Krick, PM Lenahan, J Kanicki
Journal of applied physics 64 (7), 3558-3563, 1988
2061988
Density of states of a-InGaZnO from temperature-dependent field-effect studies
C Chen, K Abe, H Kumomi, J Kanicki
IEEE Transactions on Electron Devices 56 (6), 1177-1183, 2009
1932009
Performance of thin hydrogenated amorphous silicon thin‐film transistors
J Kanicki, FR Libsch, J Griffith, R Polastre
Journal of Applied Physics 69 (4), 2339-2345, 1991
1771991
High performance organic polymer light-emitting heterostructure devices
Y He, S Gong, R Hattori, J Kanicki
Applied Physics Letters 74 (16), 2265-2267, 1999
1701999
Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors
N Lustig, J Kanicki
Journal of Applied Physics 65 (10), 3951-3957, 1989
1651989
Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays
C Chiang, J Kanicki, K Takechi
Japanese Journal of Applied Physics 37 (9R), 4704, 1998
1541998
High-efficiency organic polymer light-emitting heterostructure devices on flexible plastic substrates
Y He, J Kanicki
Applied Physics Letters 76 (6), 661-663, 2000
1462000
Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films
WL Warren, J Kanicki, J Robertson, EH Poindexter, PJ McWhorter
Journal of applied physics 74 (6), 4034-4046, 1993
1451993
Improved a-Si: H TFT pixel electrode circuits for active-matrix organic light emitting displays
Y He, R Hattori, J Kanicki
IEEE Transactions on Electron Devices 48 (7), 1322-1325, 2001
1432001
Structural ordering and enhanced carrier mobility in organic polymer thin film transistors
L Kinder, J Kanicki, P Petroff
Synthetic Metals 146 (2), 181-185, 2004
1412004
Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays
J Kanicki, JH Kim, JY Nahm, Y He, R Hattori
SID Conference Record of the International Display Research Conference, 315-318, 2001
1402001
Electrical instability of RF sputter amorphous In-Ga-Zn-O thin-film transistors
TC Fung, K Abe, H Kumomi, J Kanicki
Journal of Display Technology 5 (12), 452-461, 2009
1342009
Nature of the dominant deep trap in amorphous silicon nitride
DT Krick, PM Lenahan, J Kanicki
Physical Review B 38 (12), 8226, 1988
1201988
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Статии 1–20