The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
988 2018 InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
403 2012 300-ghz inaln/gan hemts with ingan back barrier DS Lee, X Gao, S Guo, D Kopp, P Fay, T Palacios
IEEE Electron Device Letters 32 (11), 1525-1527, 2011
312 2011 AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
208 2008 245-GHz InAlN/GaN HEMTs with oxygen plasma treatment DS Lee, JW Chung, H Wang, X Gao, S Guo, P Fay, T Palacios
IEEE Electron Device Letters 32 (6), 755-757, 2011
197 2011 Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
188 2012 AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
159 2012 Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-mS/mm transconductance R Wang, P Saunier, X Xing, C Lian, X Gao, S Guo, G Snider, P Fay, ...
IEEE electron device letters 31 (12), 1383-1385, 2010
155 2010 Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures J Simon, Z Zhang, K Goodman, H Xing, T Kosel, P Fay, D Jena
Physical review letters 103 (2), 026801, 2009
154 2009 Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes JA Bean, B Tiwari, GH Bernstein, P Fay, W Porod
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
134 2009 Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
131 2012 210-GHz InAlN/GaN HEMTs with dielectric-free passivation R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
128 2011 Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
121 2013 Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 Z Zhang, R Rajavel, P Deelman, P Fay
IEEE Microwave and Wireless Components Letters 21 (5), 267-269, 2011
120 2011 Gate-recessed integrated E/D GaN HEMT technology with fT /fmax >300 GHz ML Schuette, A Ketterson, B Song, E Beam, TM Chou, M Pilla, HQ Tserng, ...
IEEE Electron Device Letters 34 (6), 741-743, 2013
113 2013 Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
113 2011 InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE electron device letters 33 (6), 782-784, 2012
103 2012 Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
100 2015 Breaking the efficiency barrier for ambient microwave power harvesting with heterojunction backward tunnel diodes CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu
IEEE Transactions on Microwave Theory and Techniques 63 (12), 4544-4555, 2015
99 2015 Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates L Cao, J Wang, G Harden, H Ye, R Stillwell, AJ Hoffman, P Fay
Applied Physics Letters 112 (26), 2018
98 2018 
Huili Grace XingProf. of ECE & MSE, Cornell UniversityПотвърден имейл адрес: cornell.edu
