Direct bandgap germanium-on-silicon inferred from 5.7%〈 100〉 uniaxial tensile strain DS Sukhdeo, D Nam, JH Kang, ML Brongersma, KC Saraswat Photonics Research 2 (3), A8-A13, 2014 | 170 | 2014 |
Strained germanium thin film membrane on silicon substrate for optoelectronics D Nam, D Sukhdeo, A Roy, K Balram, SL Cheng, KCY Huang, Z Yuan, ... Optics Express 19 (27), 25866-25872, 2011 | 148 | 2011 |
Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles D Nam, DS Sukhdeo, JH Kang, J Petykiewicz, JH Lee, WS Jung, ... Nano letters 13 (7), 3118-3123, 2013 | 133 | 2013 |
Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping B Dutt, DS Sukhdeo, D Nam, BM Vulovic, Z Yuan, KC Saraswat Photonics Journal, IEEE 4 (5), 2002-2009, 2012 | 132 | 2012 |
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser D Nam, D Sukhdeo, SL Cheng, A Roy, K Chih-Yao Huang, M Brongersma, ... Applied physics letters 100 (13), 131112, 2012 | 110 | 2012 |
Direct bandgap light emission from strained germanium nanowires coupled with high-Q nanophotonic cavities J Petykiewicz, D Nam, DS Sukhdeo, S Gupta, S Buckley, AY Piggott, ... Nano letters 16 (4), 2168-2173, 2016 | 95 | 2016 |
Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser B Dutt, H Lin, DS Sukhdeo, BM Vulovic, S Gupta, D Nam, KC Saraswat, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (5), 1502706-1502706, 2013 | 93 | 2013 |
Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser D Nam, DS Sukhdeo, S Gupta, JH Kang, ML Brongersma, KC Saraswat IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 16-22, 2014 | 59 | 2014 |
Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics DS Sukhdeo, D Nam, JH Kang, ML Brongersma, KC Saraswat Optics Express 23 (13), 16740-16749, 2015 | 31 | 2015 |
Impact of minority carrier lifetime on the performance of strained germanium light sources DS Sukhdeo, S Gupta, KC Saraswat, BR Dutt, D Nam Optics Communications 364, 233-237, 2016 | 26 | 2016 |
Theoretical modeling for the interaction of tin alloying with n-type doping and tensile strain for GeSn lasers D Sukhdeo, Y Kim, S Gupta, K Saraswat, B Dutt, D Nam IEEE Electron Device Letters 37 (10), 1307-1310, 2016 | 23 | 2016 |
Light Emission from Highly-strained germanium for on-chip optical interconnects D Nam, DS Sukhdeo, BR Dutt, KC Saraswat ECS Transactions 64 (6), 371, 2014 | 19* | 2014 |
Ge microdisk with lithographically-tunable strain using CMOS-compatible process DS Sukhdeo, J Petykiewicz, S Gupta, D Kim, S Woo, Y Kim, J Vučković, ... Optics Express 23 (26), 33249-33254, 2015 | 12 | 2015 |
Approaches for a viable germanium laser: tensile strain, GeSn alloys, and n-type doping DS Sukhdeo, H Lin, D Nam, Z Yuan, BM Vulovic, S Gupta, JS Harris, ... 2013 Optical Interconnects Conference, 112-113, 2013 | 10 | 2013 |
Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser DS Sukhdeo, S Gupta, KC Saraswat, BR Dutt, D Nam Japanese Journal of Applied Physics 55 (2), 024301, 2016 | 7 | 2016 |
Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain DS Sukhdeo, D Nam, JH Kang, J Petykiewicz, JH Lee, WS Jung, ... 10th International Conference on Group IV Photonics, 73-74, 2013 | 7 | 2013 |
A novel, highly-strained structure with an integrated optical cavity for a low threshold germanium laser S Gupta, D Nam, J Petykiewicz, D Sukhdeo, J Vuckovic, K Saraswat CLEO: Science and Innovations, SM2F. 3, 2015 | 6 | 2015 |
Crossed nanobeam structure for a low-threshold germanium laser D Nam, JA Petykiewicz, DS Sukhdeo, S Gupta, J Vuckovic, KC Saraswat US Patent 9,595,812, 2017 | 5 | 2017 |
Anomalous threshold reduction from< 100> uniaxial strain for a low-threshold Ge laser DS Sukhdeo, Y Kim, S Gupta, KC Saraswat, BR Dutt, D Nam Optics Communications 379, 32-35, 2016 | 4 | 2016 |
Dramatic and previously overlooked interaction between strain and parasitic absorption in germanium with major implications for Si-compatible lasing S Gupta, J Petykiewicz, D Nam, D Sukhdeo, J Vuckovic, K Saraswat CLEO: Science and Innovations, SW1M. 4, 2016 | 3 | 2016 |