Следене
Leanne A. H. Jones
Leanne A. H. Jones
Потвърден имейл адрес: materials.ox.ac.uk
Заглавие
Позовавания
Позовавания
Година
Isotype Heterojunction Solar Cells Using n-Type Sb2Se3 Thin Films
TDC Hobson, LJ Phillips, OS Hutter, H Shiel, JEN Swallow, CN Savory, ...
Chemistry of Materials 32 (6), 2621-2630, 2020
972020
Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level
JEN Swallow, JB Varley, LAH Jones, JT Gibbon, LFJ Piper, VR Dhanak, ...
APL Materials 7 (2), 2019
80*2019
Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2
BAD Williamson, TJ Featherstone, SS Sathasivam, JEN Swallow, H Shiel, ...
Chemistry of Materials 32 (5), 1964-1973, 2020
612020
A CO2‐Tolerant Perovskite Oxide with High Oxide Ion and Electronic Conductivity
M Li, H Niu, J Druce, H Téllez, T Ishihara, JA Kilner, H Gasparyan, ...
Advanced Materials 32 (4), 1905200, 2020
592020
Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells
H Shiel, OS Hutter, LJ Phillips, JEN Swallow, LAH Jones, TJ Featherstone, ...
ACS Applied Energy Materials 3 (12), 11617-11626, 2020
552020
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ...
Journal of Crystal Growth 528, 125254, 2019
512019
Influence of Polymorphism on the Electronic Structure of Ga2O3
JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ...
Chemistry of Materials 32 (19), 8460-8470, 2020
422020
Modular Design via Multiple Anion Chemistry of the High Mobility van der Waals Semiconductor Bi4O4SeCl2
QD Gibson, TD Manning, M Zanella, T Zhao, PAE Murgatroyd, ...
Journal of the American Chemical Society 142 (2), 847-856, 2019
362019
Evidence of a second-order Peierls-driven metal-insulator transition in crystalline
MJ Wahila, G Paez, CN Singh, A Regoutz, S Sallis, MJ Zuba, J Rana, ...
Physical Review Materials 3 (7), 074602, 2019
272019
Na 2 Fe 2 OS 2, a new earth abundant oxysulphide cathode material for Na-ion batteries
J Gamon, AJ Perez, LAH Jones, M Zanella, LM Daniels, RE Morris, ...
Journal of Materials Chemistry A 8 (39), 20553-20569, 2020
232020
Band alignment of Sb2O3 and Sb2Se3
H Shiel, TDC Hobson, OS Hutter, LJ Phillips, MJ Smiles, LAH Jones, ...
Journal of Applied Physics 129 (23), 2021
222021
Sb 5s 2 lone pairs and band alignment of Sb 2 Se 3: a photoemission and density functional theory study
CH Don, H Shiel, TDC Hobson, CN Savory, JEN Swallow, MJ Smiles, ...
Journal of Materials Chemistry C 8 (36), 12615-12622, 2020
222020
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
JT Gibbon, L Jones, JW Roberts, M Althobaiti, PR Chalker, IZ Mitrovic, ...
AIP Advances 8 (6), 2018
202018
Ge 4s 2 lone pairs and band alignments in GeS and GeSe for photovoltaics
MJ Smiles, JM Skelton, H Shiel, LAH Jones, JEN Swallow, HJ Edwards, ...
Journal of Materials Chemistry A 9 (39), 22440-22452, 2021
182021
P-type conductivity in Sn-doped Sb2Se3
TDC Hobson, H Shiel, CN Savory, JEN Swallow, LAH Jones, ...
Journal of Physics: Energy 4 (4), 045006, 2022
152022
Tackling Disorder in -Ga O
LE Ratcliff, T Oshima, F Nippert, BM Janzen, E Kluth, R Goldhahn, ...
Advanced Materials 34 (37), 2204217, 2022
152022
Effect of metal doping in Bi2WO6 micro-flowers for enhanced photoelectrochemical water splitting
S Bera, S Samajdar, S Pal, PS Das, LAH Jones, H Finch, VR Dhanak, ...
Ceramics International 48 (23), 35814-35824, 2022
132022
Sn lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation
LAH Jones, WM Linhart, N Fleck, JEN Swallow, PAE Murgatroyd, H Shiel, ...
Physical Review Materials 4 (7), 074602, 2020
132020
Investigation of Tm2O3 as a gate dielectric for Ge MOS devices
L Žurauskaitė, L Jones, VR Dhanak, IZ Mitrovic, PE Hellström, M Östling
ECS Transactions 86 (7), 67, 2018
132018
Multi‐Phase Sputtered TiO2‐Induced Current–Voltage Distortion in Sb2Se3 Solar Cells
CH Don, TP Shalvey, MJ Smiles, L Thomas, LJ Phillips, TDC Hobson, ...
Advanced Materials Interfaces 10 (20), 2300238, 2023
72023
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