Effect of cobalt doping on structural, thermo and photoluminescent properties of ZnO nanopowders N Pushpa, MK Kokila Journal of Luminescence 190, 100-107, 2017 | 40 | 2017 |
Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments KC Praveen, N Pushpa, YPP Rao, G Govindaraj, JD Cressler, ... Solid-state electronics 54 (12), 1554-1560, 2010 | 26 | 2010 |
Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs KC Praveen, N Pushpa, PS Naik, JD Cressler, A Tripathi, APG Prakash Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 25 | 2012 |
Reliability studies on NPN RF power transistors under swift heavy ion irradiation N Pushpa, KC Praveen, APG Prakash, PS Naik, JD Cressler, SK Gupta, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 20 | 2012 |
An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors N Pushpa, KC Praveen, APG Prakash, YPP Rao, A Tripati, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010 | 18 | 2010 |
A comparison of electron, proton and gamma irradiation effects on the IV characteristics of 200 GHz SiGe HBTs VN Hegde, TM Pradeep, N Pushpa, KC Praveen, KG Bhushan, ... IEEE Transactions on Device and Materials Reliability 18 (4), 592-598, 2018 | 17 | 2018 |
Synthesis, growth and characterization of a new promising organic nonlinear optical crystal: 4-Nitrophenyl hydrazone BC Hemaraju, MA Ahlam, N Pushpa, KM Mahadevan, APG Prakash Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 151, 854-860, 2015 | 17 | 2015 |
A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs N Pushpa, KC Praveen, APG Prakash, YPP Rao, A Tripati, G Govindaraj, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010 | 17 | 2010 |
Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs AP Gnana Prakash, TM Pradeep, VN Hegde, N Pushpa, PK Bajpai, ... Radiation Effects and Defects in Solids 172 (11-12), 952-963, 2017 | 16 | 2017 |
50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs KC Praveen, N Pushpa, A Tripathi, D Revannasiddaiah, JD Cressler, ... Radiation Effects and Defects in Solids 166 (8-9), 710-717, 2011 | 15 | 2011 |
An analysis of 175áMeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors N Pushpa, KC Praveen, APG Prakash, SK Gupta, D Revannasiddaiah Current applied physics 13 (1), 66-75, 2013 | 14 | 2013 |
An investigation of electron and oxygen ion damage in Si npn RF power transistors N Pushpa, AP Gnana Prakash, KC Praveen, JD Cressler, ... Radiation Effects & Defects in Solids 164 (10), 592-603, 2009 | 14 | 2009 |
A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs A Anjum, NH Vinayakprasanna, TM Pradeep, N Pushpa, JBM Krishna, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 13 | 2016 |
Thermoluminescence studies of γ-irradiated ZnO: Mg2+ nanoparticles N Pushpa, MK Kokila, KR Nagabhushana Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 10 | 2016 |
Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors MN Bharathi, VN Hegde, A Anjum, TM Pradeep, N Pushpa, KC Praveen, ... Radiation Effects and Defects in Solids 172 (3-4), 235-249, 2017 | 9 | 2017 |
Red luminescence from ZnO : Cr3+ nanophosphors under visible excitation N Pushpa, MK Kokila, BM Nagabhushana, H Nagabhushana, AJ Reddy Bulletin of Materials Science 38, 1359-1365, 2015 | 9 | 2015 |
A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors NH Vinayakprasanna, KC Praveen, N Pushpa, JD Cressler, ... Indian Journal of Physics 89, 789-796, 2015 | 8 | 2015 |
High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200áGHz SiGe HBTs VN Hegde, KC Praveen, TM Pradeep, N Pushpa, JD Cressler, A Tripathi, ... Nuclear Engineering and Technology 51 (5), 1428-1435, 2019 | 7 | 2019 |
80 MeV carbon ion irradiation effects on advanced 200 GHz silicon-germanium heterojunction bipolar transitors NH Vinayakprasanna, KC Praveen, N Pushpa, A Tripathi, J D Cressler, ... Advanced Materials Letters 6 (2), 120-126, 2015 | 7 | 2015 |
Luminescence properties of La2O3: Eu3+ nanophosphor prepared by sol–gel method N Pushpa, MK Kokila, NJ Shivaramu Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 6 | 2016 |