Jonas Lähnemann

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2018
Позовавания	2296	1257
h-индекс	26	21
i10-индекс	48	39

260

130

195

201120122013201420152016201720182019202020212022202342 75 119 155 190 246 209 209 195 225 217 207 202

Публичен достъп

Преглед на всички

33 статии

6 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Achim TrampertPaul-Drude-InstituteПотвърден имейл адрес: pdi-berlin.de
Carsten PfüllerPost Doc, Paul-Drude-InstitutПотвърден имейл адрес: pdi-berlin.de
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceПотвърден имейл адрес: cea.fr
Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
AKHIL AJAYPostdoctoral researcherПотвърден имейл адрес: wsi.tum.de
Dr. Christian HauswaldDeutsche Bahn AGПотвърден имейл адрес: deutschebahn.com
Sergio Fernández-GarridoAssociate Professor in Materials Science and ERC-CoG Grantee at Universidad Politécnica de MadridПотвърден имейл адрес: upm.es
Andreas WaagTechnische Universität BraunschweigПотвърден имейл адрес: tu-braunschweig.de
Martien Ilse den HertogInstitut Neel, GrenobleПотвърден имейл адрес: grenoble.cnrs.fr
Bernd JenichenPaul-Drude-InstitutПотвърден имейл адрес: pdi-berlin.de
Caroline ChèzeПотвърден имейл адрес: pdi-berlin.de
Caroline B. LimLNE-SYRTE, Observatoire de ParisПотвърден имейл адрес: obspm.fr
Pınar DoğanAssistant Professor, Department of Electrical and Electronics Engineering, Mugla Sitki KocmanПотвърден имейл адрес: mu.edu.tr
Catherine Bougerol-(Chaillout)Directrice de recherche CNRSПотвърден имейл адрес: neel.cnrs.fr
Jörg SchoermannAkademischer Rat, Universität GießenПотвърден имейл адрес: exp1.physik.uni-giessen.de
Pierre CorfdirABB Corporate ResearchПотвърден имейл адрес: ch.abb.com
Vladimir KaganerPaul-Drude-Institut für FestkörperelektronikПотвърден имейл адрес: pdi-berlin.de
Martin EickhoffInstitut für Festkörperphysik, Universität BremenПотвърден имейл адрес: ifp.uni-bremen.de

Следене

Jonas Lähnemann

Wissenschaftlicher Mitarbeiter, Paul-Drude-Institut für Festkörperelektronik

Потвърден имейл адрес: pdi-berlin.de - Начална страница

Semiconductor physics Nanostructures Cathodoluminescence spectroscopy


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ... Nanotechnology 21 (30), 305201, 2010	182	2010
Luminescence associated with stacking faults in GaN J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn Journal of Physics D: Applied Physics 47 (42), 423001, 2014	147	2014
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B 85 (4), 045323, 2012	144	2012
Direct experimental determination of the spontaneous polarization of GaN J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ... Physical Review B 86 (8), 081302, 2012	127	2012
Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111) E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ... Crystal Growth & Design 11 (9), 4001-4008, 2011	116	2011
Continuous-flow MOVPE of Ga-polar GaN column arrays and core–shell LED structures X Wang, S Li, MS Mohajerani, J Ledig, HH Wehmann, M Mandl, ... Crystal Growth & Design 13 (8), 3475-3480, 2013	92	2013
hyperspy/hyperspy: Release v1. 7.3 F De La Peña, E Prestat, V Tonaas Fauske, P Burdet, J Lähnemann, ... Zenodo, 0	86*
Metal-exchange catalysis in the growth of sesquioxides: Towards heterostructures of transparent oxide semiconductors P Vogt, O Brandt, H Riechert, J Lähnemann, O Bierwagen Physical review letters 119 (19), 196001, 2017	80	2017
Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ... Journal of the American Chemical Society 135 (28), 10242-10245, 2013	69	2013
Current path in light emitting diodes based on nanowire ensembles F Limbach, C Hauswald, J Lähnemann, M Wölz, O Brandt, A Trampert, ... Nanotechnology 23 (46), 465301, 2012	69	2012
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ... Journal of Crystal Growth 315 (1), 164-167, 2011	59	2011
UV photosensing characteristics of nanowire-based GaN/AlN superlattices J Lähnemann, M Den Hertog, P Hille, M De La Mata, T Fournier, ... Nano letters 16 (5), 3260-3267, 2016	58	2016
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ... Physical Review B 90 (19), 195309, 2014	57	2014
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure J Lähnemann, O Brandt, C Pfüller, T Flissikowski, U Jahn, E Luna, ... Physical Review B 84 (15), 155303, 2011	57	2011
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors M Spies, MI Den Hertog, P Hille, J Schörmann, J Polaczyński, B Gayral, ... Nano letters 17 (7), 4231-4239, 2017	49	2017
Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte J Kamimura, P Bogdanoff, FF Abdi, J Lähnemann, R van de Krol, ... The Journal of Physical Chemistry C 121 (23), 12540-12545, 2017	46	2017
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ... Nanotechnology 26 (43), 435201, 2015	43	2015
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short-and mid-wavelength infrared regions CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ... Journal of Applied Physics 118 (1), 014309, 2015	39	2015
Impact of Cu-rich growth on the CuIn1− xGaxSe2 surface morphology and related solar cells behaviour N Barreau, J Lähnemann, F Couzinié-Devy, L Assmann, P Bertoncini, ... Solar Energy Materials and Solar Cells 93 (11), 2013-2019, 2009	37	2009
Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ... Crystal Growth & Design 11 (10), 4257-4260, 2011	35	2011

Системата не може да изпълни операцията сега. Опитайте отново по-късно.

Статии 1–20

Позовавания годишно

Дублирани описания

Обединени библиографски описания

Добавяне на съавториСъавтори

Следене

Позовавания

Съавтори