Следене
R. Gaire
R. Gaire
Applied Materials, Albany, NY
Потвърден имейл адрес: amat.com
Заглавие
Позовавания
Позовавания
Година
Tunable bandgap in graphene by the controlled adsorption of water molecules
F Yavari, C Kritzinger, C Gaire, L Song, H Gulapalli, T Borca‐Tasciuc, ...
small 6 (22), 2535-2538, 2010
3792010
Mound formation in surface growth under shadowing
M Pelliccione, T Karabacak, C Gaire, GC Wang, TM Lu
Physical Review B 74 (12), 125420, 2006
1232006
Small angle grain boundary Ge films on biaxial CaF2/glass substrate
C Gaire, PC Clemmer, HF Li, TC Parker, P Snow, I Bhat, S Lee, GC Wang, ...
Journal of Crystal Growth 312 (4), 607-610, 2010
442010
Mechanical testing of isolated amorphous silicon slanted nanorods
C Gaire, DX Ye, F Tang, RC Picu, GC Wang, TM Lu
Journal of nanoscience and nanotechnology 5 (11), 1893-1897, 2005
432005
Texture evolution during shadowing growth of isolated Ru columns
F Tang, T Karabacak, P Morrow, C Gaire, GC Wang, TM Lu
Physical Review B 72 (16), 165402, 2005
402005
AFM, SEM and in situ RHEED study of Cu texture evolution on amorphous carbon by oblique angle vapor deposition
F Tang, C Gaire, DX Ye, T Karabacak, TM Lu, GC Wang
Physical Review B 72 (3), 035430, 2005
392005
Morphology and texture evolution of nanostructured CaF2 films on amorphous substrates under oblique incidence flux
C Gaire, P Snow, TL Chan, W Yuan, M Riley, Y Liu, SB Zhang, GC Wang, ...
Nanotechnology 21 (44), 445701, 2010
282010
Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition
C Gaire, S Rao, M Riley, L Chen, A Goyal, S Lee, I Bhat, TM Lu, GC Wang
Thin Solid Films 520 (6), 1862-1865, 2012
252012
In-situ boron doped SiGe epitaxy optimization for FinFET source/drain
Y Qi, J Peng, HC Lo, JR Holt, M Willemann, C Gaire, S Evans, P Flanagan, ...
ECS Transactions 75 (8), 265, 2016
202016
Texture evolution of vertically aligned biaxial tungsten nanorods using RHEED surface pole figure technique
R Krishnan, Y Liu, C Gaire, L Chen, GC Wang, TM Lu
Nanotechnology 21 (32), 325704, 2010
182010
In-situ reflection high-energy electron diffraction study of epitaxial growth of Cu on NaCl (100) under oblique angle vapor deposition
C Gaire, F Tang, GC Wang
Thin Solid Films 517 (16), 4509-4514, 2009
172009
Deformation of amorphous silicon nanostructures subjected to monotonic and cyclic loading
C Gaire, DX Ye, TM Lu, GC Wang, RC Picu
Journal of Materials Research 23 (2), 328-335, 2008
172008
Low temperature epitaxial growth of Ge on CaF2 buffered cube-textured Ni
C Gaire, J Palazzo, I Bhat, A Goyal, GC Wang, TM Lu
Journal of crystal growth 343 (1), 33-37, 2012
142012
Type B epitaxy of Ge on CaF2 (111) surface
TL Chan, C Gaire, TM Lu, GC Wang, SB Zhang
Surface science 604 (19-20), 1645-1648, 2010
142010
Dopant diffusion barrier to form isolated source/drains in a semiconductor device
J Wan, J Liu, C Gaire, M Hariharaputhiran, ACH Wei, BV Krishnan, ...
US Patent App. 14/164,368, 2015
132015
Orientational domains in metalorganic chemical vapor deposited CdTe (111) film on cube-textured Ni
GC Wang, LH Zhang, K Kisslinger, C Gaire, A Goyal, I Bhat, TM Lu
Thin Solid Films 531, 217-221, 2013
132013
Study of metal adhesion on porous low-k dielectric using telephone cord buckling
M He, C Gaire, GC Wang, TM Lu
Microelectronics Reliability 51 (4), 847-850, 2011
122011
A 12nm FinFET technology featuring 2nd generation FinFET for low power and high performance applications
HC Lo, D Choi, Y Hu, Y Shen, Y Qi, J Peng, D Zhou, M Mohan, C Yong, ...
2018 IEEE Symposium on VLSI Technology, 215-216, 2018
102018
Devices and methods of forming finFETs with self aligned fin formation
J Wan, A Wei, L Zhao, DG Yang, JP Liu, TY Luo, G Bouche, ...
US Patent 9,147,696, 2015
102015
Temperature dependent biaxial texture evolution in Ge films under oblique angle vapor deposition
P Snow, C Gaire, TM Lu, GC Wang
Thin Solid Films 519 (16), 5413-5418, 2011
72011
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Статии 1–20